Double sided Si(Ge)/Sapphire/III-nitride hybrid structure

Patent metadata

Field	Value
Publication number	US-9449818-B2
Application number	US-201414204535-A
Country	US
Kind code	B2
Filing date	Mar 11, 2014
Priority date	Mar 14, 2013
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

First claim

The invention claimed is:

1. A double sided hybrid crystal structure, comprising:
trigonal Sapphire wafer defining a (0001) C-plane and having front and rear sides, the Sapphire wafer being substantially transparent to light in the visible and infrared spectra and also providing insulation with respect to electromagnetic radio frequency noise;
a layer of crystalline group IV material comprising one or more of Si, Ge and C and having a cubic diamond structure aligned with the cubic <111>direction on the (0001) C-plane and strained as rhonmbohedron to thereby enable continuous integration of a selected Si(Ge)(C) device onto the rear side of the Sapphire wafer;
an integrated crystalline layer on the front side of the. Sapphire wafer, wherein the crystalline layer on the front side of the sapphire comprises a material, wherein the material comprises a III-Nitride material or a ZrO material that enables continuous integration of a selected III-Nitride or ZnO device on the front side of the Sapphire wafer.

2. The hybrid crystal structure of claim 1 , wherein the crystalline layer on the front side comprises the III-Nitride material.

3. The hybrid crystal structure of claim 2 , wherein the III-Nitride crystalline layer comprises a hexagonal crystal structure.

4. The hybrid crystal structure of claim 3 , wherein the III-Nitride crystalline layer comprises a device that is a light emitting semiconductor device, a light sensitive device, or a wide-bandgap transistor device.

5. The hybrid crystal structure of claim 4 , wherein the device comprises a light emitting diode.

6. The hybrid crystal structure of claim 4 , wherein the device comprises a light emitting semiconductor device that emits a light, wherein the light is selected from the group consisting of blue light, green light, ultraviolet light, and any combinations thereof.

7. The hybrid crystal structure of claim 4 , wherein the device comprises an ultra violet detector.

8. The hybrid crystal structure of claim 4 , wherein the device comprises a temperature sensor.

9. The hybrid crystal structure of claim 3 , wherein the III-Nitride device comprises a laser diode.

10. The hybrid crystal structure of claim 1 , wherein the layer of crystalline Group IV material comprises a solar cell.

11. The hybrid crystal structure of claim 10 , wherein the solar cell comprises a substantially mono crystalline Group IV material with at least about 70% single crystalline material as determined by X-ray diffraction.

12. The hybrid crystal structure of claim 11 , wherein the solar cell comprises a plurality of metal electrodes.

13. The hybrid crystal structure of claim 1 , wherein the layer of crystalline Group IV material comprises Si material forming a solar cell.

14. The hybrid crystal structure of claim 1 , wherein the sapphire wafer has a substantially uniform thickness with oppositely-facing planar surfaces.

Assignees

• Nasa

Inventors

• Park Yeonjoon
• Choi Sang Hyouk

Classifications

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2926

  Crystal orientations · CPC title