Auxiliary exposure apparatus and exposure amount distribution acquisition method

Patent metadata

Field	Value
Publication number	US-2018095370-A1
Application number	US-201715720891-A
Country	US
Kind code	A1
Filing date	Sep 29, 2017
Priority date	Oct 4, 2016
Publication date	Apr 5, 2018
Grant date	—

Abstract

An auxiliary exposure apparatus is for performing auxiliary exposure of applying light of a predetermined wavelength from a laser light source to a resist film on a wafer, separately from exposure processing of transferring a pattern of a mask to the resist film applied on the wafer, and includes: a first total reflection mirror configured to reflect the light from the laser light source toward the wafer; and an imaging device including a light receiving part configured to receive light after reflected by the wafer.

First claim

What is claimed is:

1 . An auxiliary exposure apparatus for applying light of a predetermined wavelength from a light source to a resist film on a substrate, separately from exposure processing of transferring a pattern of a mask to the resist film applied on the substrate, the auxiliary exposure apparatus comprising:
a first reflection member configured to reflect the light from the light source toward the substrate; and a light receiving part configured to receive light after reflected by the substrate.

2 . The auxiliary exposure apparatus according to claim 1 , further comprising:
a second reflection member configured to reflect light reflected by the first reflection member and reflected by the substrate, wherein the light receiving part receives light reflected by the second reflection member.

3 . The auxiliary exposure apparatus according to claim 1 , further comprising:
an acquisition unit configured to acquire a distribution of an exposure amount to the resist film on the substrate, based on a result of reception of the light by the light receiving part.

4 . The auxiliary exposure apparatus according to claim 1 , further comprising:
a moving mechanism configured to move the substrate in a predetermined direction; and a polygon mirror configured to reflect the light from the light source toward the first reflection member, wherein the moving mechanism moves the substrate to scan the substrate in the predetermined direction with light reflected by the polygon mirror and reflected by the first reflection member, and wherein the polygon mirror is rotated to scan the substrate in a direction perpendicular to the predetermined direction with the light reflected by the polygon mirror and reflected by the first reflection member.

5 . The auxiliary exposure apparatus according to claim 3 , further comprising:
a moving mechanism configured to move the substrate in a predetermined direction; and a polygon mirror configured to reflect the light from the light source toward the first reflection member, wherein the moving mechanism moves the substrate to scan the substrate in the predetermined direction with light reflected by the polygon mirror and reflected by the first reflection member, and wherein the polygon minor is rotated to scan the substrate in a direction perpendicular to the predetermined direction with the light reflected by the polygon mirror and reflected by the first reflection member.

6 . The auxiliary exposure apparatus according to claim 1 ,
wherein the first reflection member is provided so that the light reflected by the first reflection member is incident on the substrate at a non-right angle to the substrate.

7 . The auxiliary exposure apparatus according to claim 1 ,
wherein the light receiving part is a line sensor.

8 . The auxiliary exposure apparatus according to claim 3 ,
wherein the light receiving part is a line sensor.

9 . The auxiliary exposure apparatus according to claim 1 ,
wherein the light receiving part has sensitivity to an ultraviolet ray.

10 . The auxiliary exposure apparatus according to claim 3 ,
wherein the light receiving part has sensitivity to an ultraviolet ray.

11 . The auxiliary exposure apparatus according to claim 7 ,
wherein the light receiving part has sensitivity to an ultraviolet ray.

12 . An exposure amount distribution acquisition method of acquiring a distribution of an exposure amount to a resist film on a substrate, in auxiliary exposure processing performed separately from exposure processing of transferring a pattern of a mask to the resist film applied on the substrate, the exposure amount distribution acquisition method comprising:
in the auxiliary exposure processing, reflecting light from a light source configured to emit light of a predetermined wavelength, toward the substrate by a first reflection member; receiving light after reflected by the substrate by a light receiving part; and acquiring the distribution of the exposure amount to the resist film on the substrate, based on a result of reception of the light by the light receiving part.

13 . The exposure amount distribution acquisition method according to claim 12 ,
wherein when the light after reflected by the substrate is received by the light receiving part, light reflected by the first reflection member and reflected by the substrate is reflected by a second reflection member and received by the light receiving part.

14 . The exposure amount distribution acquisition method according to claim 12 , further comprising:
in the auxiliary exposure processing, moving the substrate by a moving mechanism configured to move the substrate in a predetermined direction, and rotating a polygon mirror configured to reflect the light from the light source toward the first reflection member; receiving light reflected by the polygon minor and reflected by the first reflection member, by the light receiving part; and acquiring the distribution of the exposure amount to the resist film on the substrate, based on a result of reception of the light.

15 . The exposure amount distribution acquisition method according to claim 12 ,
wherein the light reflected by the first reflection member is reflected by the first reflection member so as to be incident on the substrate at a non-right angle to the substrate.

Assignees

• Tokyo Electron Ltd

Inventors

• Kashiwagi Hideaki
• Niwa Takafumi
• Koga Norihisa

Classifications

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0474

  comprising at least one lithography chamber · CPC title