Non-disappearing anode for use with dielectric deposition

Patent metadata

Field	Value
Publication number	US-2017316924-A1
Application number	US-201715432590-A
Country	US
Kind code	A1
Filing date	Feb 14, 2017
Priority date	Apr 27, 2016
Publication date	Nov 2, 2017
Grant date	—

Abstract

Embodiments of the invention generally relate to an anode for a semiconductor processing chamber. More specifically, embodiments described herein relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A shaded area is disposed in the feature wherein the shaded area is not visible to the sputtering target. A small anode surface is disposed in the shaded area.

First claim

What is claim is:

1 . A process kit for a plasma processing chamber, comprising:
a conductive body having orientation when the body is in use in the processing chamber that defines a top of the body and a vertical centerline, the body having an array of features formed in a surface of the body that is exposed to a plasma when in use in the processing chamber, the features having an opening in the surface, the features having a profile, the profile having a geometric centerline extending away from the top of the body through the opening, the geometric centerline forming an obtuse angle with the vertical centerline of the body.

2 . The process kit of claim 1 , wherein the features further comprise:
an overhanging portion defined on a side of the opening closest the top of the body, wherein a greater portion of the profile resides above an imaginary line extending perpendicularly through the vertical centerline and intersecting a tip of the overhanging portion.

3 . The process kit of claim 1 , wherein the conductive body is configured as a deposition ring.

4 . The process kit of claim 1 , wherein the conductive body is configured as a cover ring.

5 . The process kit of claim 1 , wherein the conductive body is configured as a cylindrical shield.

6 . The process kit of claim 1 , wherein the surface of the body is textured.

7 . The process kit of claim 1 , wherein the surface of the body has a grit blasted texture.

8 . The process kit of claim 7 , wherein the grit blasted texture has a surface roughness between about 175 microinches to about 450 microinches.

9 . The process kit of claim 1 , wherein the profiles of the surface features have a combined area of at least about 15 square centimeters and are formed at an angle to a perpendicular of the vertical centerline.

10 . A process kit for a RF physical vapor deposition (RFPVD) chamber, comprising:
a conductive body having orientation when the process kit is in use in the RFPVD chamber that defines a top of the body and a vertical centerline, the body having an array of features formed in a substantially vertical surface of the body that is exposed to a plasma when the process kit in use in the RFPVD chamber, the features having an opening in the surface, the features having a profile, wherein a greater portion of the profile resides above an imaginary line extending perpendicularly through the vertical centerline and an edge of the opening closest the top of the body.

11 . The process kit of claim 10 , wherein the profile of the features further comprise:
a geometric centerline of the extending away from the top of the body through the opening, the geometric centerline forming an obtuse angle with the vertical centerline of the body, the features having a shadowed area having an configuration that prevents straight line exposure to a sputtering target when the process kit in use in the RFPVD chamber.

12 . The process kit of claim 10 , wherein the conductive body is configured as a deposition ring.

13 . The process kit of claim 10 , wherein the conductive body is configured as a cover ring.

14 . The process kit of claim 10 , wherein the conductive body is configured as a cylindrical shield, the vertical surface defining an inner cylindrical sidewall of the body.

15 . The process kit of claim 10 , wherein the surface of the body is textured.

16 . The process kit of claim 10 , wherein the surface of the body has a grit blasted texture.

17 . The process kit of claim 16 , wherein the grit blasted texture has a surface roughness between about 175 microinches to about 450 microinches.

18 . The process kit of claim 10 , wherein the profiles of the surface features have a combined area of at least about 15 square centimeters and are formed at an angle to a perpendicular of the vertical centerline.

19 . A physical vapor deposition (PVD) chamber, comprising:
a chamber body defining in interior volume; a substrate support disposed in the interior volume; a sputtering target disposed in the interior volume above the substrate support; and a process kit disposed in the interior volume between the substrate support and sputtering target, the process kit comprising:
a conductive body having a vertical centerline, the body having an array of features formed in a surface of the body that is exposed to a plasma when in use in the PVD chamber, the features having an opening in the surface, the features having a profile, the profile having a geometric centerline extending away from the target through the opening, the geometric centerline forming an obtuse angle with the vertical centerline of the body.

20 . The PVD chamber of claim 19 , wherein the profile of features has a greater portion that resides above an imaginary line extending perpendicularly through the vertical centerline and an edge of the opening closest the top of the body.

Assignees

• Applied Materials Inc

Inventors

• Cox Michael S
• Hawrylchak Lara
• West Brian T

Classifications

• H01J37/3438 Primary

  Electrodes other than cathode · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6329

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• H01J37/3441 Primary

  Dark space shields · CPC title

• H01J37/32559

  Protection means, e.g. coatings · CPC title