Cross flow manifold for electroplating apparatus

US2017175286A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2017175286-A1
Application numberUS-201715448472-A
CountryUS
Kind codeA1
Filing dateMar 2, 2017
Priority dateJul 2, 2010
Publication dateJun 22, 2017
Grant date

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method for electroplating a substrate comprising: (a) receiving a substrate in a substrate holder, the substrate being substantially planar, wherein a plating face of the substrate is exposed, and wherein the substrate holder is configured to hold the substrate such that the plating face of the substrate is separated from the anode during electroplating; (b) immersing the substrate in electrolyte, wherein a gap of about 10 mm or less is formed between the plating face of the substrate and an upper surface of an ionically resistive element, wherein the ionically resistive element is at least coextensive with the plating face of the substrate, and wherein the ionically resistive element is adapted to provide ionic transport through the ionically resistive element during electroplating; (c) flowing electrolyte in contact with the substrate in the substrate holder (i) from a side inlet, into the gap, and out a side outlet, and (ii) from below the ionically resistive element, through the ionically resistive element, into the gap, and out the side outlet, wherein the side inlet and side outlet are positioned proximate azimuthally opposed perimeter locations on the plating face of the substrate, and wherein the side inlet and side outlet are designed or configured to generate cross-flowing electrolyte in the gap during electroplating; (d) rotating the substrate holder; and (e) electroplating material onto the plating face of the substrate while flowing the electrolyte as in (c). 2 . The method of claim 1 , wherein the ionically resistive element comprises a cavity that defines, at least partially, a cross flow injection manifold that is arc-shaped and positioned proximate a periphery of the substrate, and wherein the side inlet receives electrolyte from the cross flow injection manifold. 3 . The method of claim 1 , further comprising positioning a cross flow confinement ring proximate the periphery of the substrate and at least partially between the ionically resistive element and the substrate holder, wherein the cross flow confinement ring at least partially defines a side of the gap. 4 . The method of claim 3 , wherein the ionically resistive element comprises a cavity that defines, at least partially, a cross flow injection manifold that is arc-shaped and positioned proximate a periphery of the substrate, and wherein the side inlet receives electrolyte from the cross flow injection manifold. 5 . The method of claim 1 , wherein flowing electrolyte in operation (c) comprises flowing electrolyte at a cross flow velocity of at least about 3 cm/s across a center point on the plating face of the substrate. 6 . The method of claim 1 , wherein during operation (c), electrolyte exits the ionically resistive element at a velocity of at least about 10 cm/s. 7 . The method of claim 1 , wherein the side inlet is separated into two or more azimuthally distinct and fluidically separated sections, and wherein the flow of electrolyte to the azimuthally distinct sections of the inlet are independently controlled. 8 . The method of claim 1 , wherein the side outlet is separated into two or more azimuthally distinct side outlet sections. 9 . The method of claim 8 , further comprising flowing electrolyte at different flow rates through at least two of the azimuthally distinct side outlet sections. 10 . The method of claim 1 , wherein flow directing elements are positioned in the gap, and wherein the flow directing elements cause electrolyte to flow in a substantially linear flow path from the side inlet to the side outlet. 11 . The method of claim 10 , wherein the flow directing elements are fins. 12 . The method of claim 1 , wherein a total flow rate of electrolyte into the gap is between about 1-60 L/min. 13 . The method of claim 12 , wherein the total flow rate of electrolyte into the gap is between about 6-60 L/min. 14 . The method of claim 12 , wherein the total flow rate of electrolyte into the gap is between about 5-25 L/min. 15 . The method of claim 14 , wherein the total flow rate of electrolyte into the gap is between about 15-25 L/min.

Assignees

Inventors

Classifications

  • Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

  • by plating, e.g. electroless plating or electroplating · CPC title

  • comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title

  • by selectively depositing, e.g. by using selective CVD or plating · CPC title

  • the interconnections being through-semiconductor vias · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US2017175286A1 cover?
The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channele…
Who is the assignee on this patent?
Novellus Systems Inc
What technology area does this patent fall under?
Primary CPC classification C25D21/10. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Jun 22 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).