Pre-coated shield using in vhf-rf pvd chambers

Patent metadata

Field	Value
Publication number	US-2017145553-A1
Application number	US-201615347582-A
Country	US
Kind code	A1
Filing date	Nov 9, 2016
Priority date	Nov 24, 2015
Publication date	May 25, 2017
Grant date	—

Abstract

Implementations of the present disclosure relate to an improved shield for use in a processing chamber. In one implementation, the shield includes a hollow body having a cylindrical shape that is substantially symmetric about a central axis of the body, and a coating layer formed on an inner surface of the body. The coating layer is formed the same material as a sputtering target used in the processing chamber. The shield advantageously reduces particle contamination in films deposited using RF-PVD by reducing arcing between the shield and the sputtering target. Arcing is reduced by the presence of a coating layer on the interior surfaces of the shield.

First claim

1 . A shield for use in a physical vapor deposition processing chamber, comprising:
a hollow body having a cylindrical shape that is substantially symmetric about a central axis of the hollow body, the body having an inner surface and an outer surface; and a coating layer formed on the inner surface of the body, the coating layer comprising a metal, a metal oxide, metal alloy, or magnetic material.

2 . The shield of claim 1 , wherein the outer surface of the body is free from the coating layer.

3 . The shield of claim 1 , wherein the coating layer is formed from cobalt, cobalt silicide, nickel, nickel silicide, platinum, tungsten, tungsten silicide, tungsten nitride, tungsten carbide, copper, chrome, tantalum, tantalum nitride, tantalum carbide, titanium, titanium oxide, titanium nitride, lanthanum, zinc, alloys thereof, silicides thereof, derivatives thereof, or any combinations thereof.

4 . The shield of claim 1 , wherein the coating layer is formed from cobalt or cobalt alloy.

5 . The shield of claim 1 , wherein the body is formed of aluminum, stainless steel, aluminum oxide, aluminum nitride, or ceramic, or any combinations thereof.

6 . The shield of claim 5 , wherein the body is formed of aluminum and the coating layer is formed of cobalt or cobalt alloy.

7 . The shield of claim 1 , wherein the coating layer has a thickness of about 2 μm to about 35 μm.

8 . A shield for use in a physical vapor deposition processing chamber, the shield comprising an elongated cylindrical body configured to surround a processing volume between a sputtering target and a substrate support and protect sidewalls of the processing chamber from deposition, and the body is fabricated from aluminum, wherein the improvement comprising:
a coating layer formed on an inner surface of the elongated cylindrical body, wherein the coating layer comprises cobalt or cobalt alloy.

9 . The shield of claim 8 , wherein coating layer is formed of the same material as the sputtering target.

10 . The shield of claim 8 , wherein the coating layer has a thickness of about 2 μm to about 35 μm.

11 . The shield of claim 8 , wherein the coating layer has a mean surface roughness of about 80 μin to about 500 μin.

12 . The shield of claim 8 , wherein the body comprises:
a first annular leg; a second annular leg, the second annular leg is relatively shorter than the first annular leg; and a horizontal leg connecting the second annular leg to the first annular leg at a lower portion of the first annular leg.

13 . The shield of claim 12 , wherein an outer surface of the first annular leg is free from the coating layer.

14 . A method for treating a shield for use in a physical vapor deposition processing chamber, the shield comprising an elongated cylindrical body configured to protect sidewalls of the processing chamber from deposition, comprising:
depositing a coating layer on an inner surface of the body, the coating layer comprises a metal, a metal oxide, metal alloy, or magnetic material.

15 . The method of claim 14 , wherein the body is formed of aluminum, stainless steel, aluminum oxide, aluminum nitride, or ceramic, or any combinations thereof.

16 . The method of claim 14 , wherein the coating layer is formed of a material comprising cobalt, cobalt silicide, nickel, nickel silicide, platinum, tungsten, tungsten silicide, tungsten nitride, tungsten carbide, copper, chrome, tantalum, tantalum nitride, tantalum carbide, titanium, titanium oxide, titanium nitride, lanthanum, zinc, alloys thereof, silicides thereof, derivatives thereof, or any combinations thereof.

17 . The method of claim 14 , wherein the coating layer is formed of cobalt or cobalt alloy.

18 . The method of claim 14 , wherein the coating layer is formed by a plasma spray process, a sputtering process, a PVD process, a CVD process, a PE-CVD process, an ALD process, a PE-ALD process, an electroplating or electrochemical plating process, or an electroless deposition process.

19 . The method of claim 14 , further comprising:
roughening the coating layer by an abrasive blasting process.

20 . The method of claim 19 , further comprising:
installing the body having the coating layer in the processing chamber prior to processing a substrate in the processing chamber.

Assignees

• Applied Materials Inc

Inventors

• Liu Zhendong
• Hou Wenting
• Lei Jianxin
• Young Donny
• Lu William M

Classifications

• C23C16/4404

  Coatings or surface treatment on the inside of the reaction chamber or on parts thereof · CPC title

• C23C4/134 Primary

  Plasma spraying · CPC title

• C23C14/34

  Sputtering · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title