Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of alpha amino acids and bisepoxides

Patent metadata

Field	Value
Publication number	US-2017037527-A1
Application number	US-201615220472-A
Country	US
Kind code	A1
Filing date	Jul 27, 2016
Priority date	Aug 6, 2015
Publication date	Feb 9, 2017
Grant date	—

Abstract

Electroplating methods enable the plating of photoresist defined features which have substantially uniform morphology. The electroplating methods include copper electroplating baths with reaction products of α-amino acids and bisepoxides to electroplate the photoresist defined features. Such features include pillars, bond pads and line space features.

First claim

What is claimed is:

1 . A method comprising:
a) providing a substrate comprising a layer of photoresist, wherein the layer of photoresist comprises a plurality of apertures; b) providing a copper electroplating bath comprising one or more reaction products of one or more α-amino acids and one or more bisepoxides; an electrolyte; one or more accelerators; and one or more suppressors; c) immersing the substrate comprising the layer of photoresist with the plurality of apertures in the copper electroplating bath; and d) electroplating a plurality of copper photoresist defined features in the plurality of apertures, the plurality of photoresist defined features comprise an average % TIR of -5% to -1%.

2 . The method of claim 1 , wherein an average % WID of an array of copper photoresist defined features on the substrate is 12% to 15%.

3 . The method of claim 1 , wherein the one or more α-amino acids are chosen from arginine and lysine.

4 . The method of claim 1 , wherein the one or more bisepoxides have a formula:

wherein R 1 and R 2 are independently chosen from hydrogen and (C 1 -C 4 )alkyl, A=O((CR 3 R 4 ) m O) n or (CH 2 ) y , each R 3 and R 4 is independently chosen from hydrogen, methyl, or hydroxyl, m=1-6, n=1-20 and y=0-6 and when y=0, A is a chemical bond.

5 . The method of claim 4 , wherein the bisepoxides have a formula:

wherein R 1 and R 2 are independently chosen from hydrogen and (C 1 -C 4 )alkyl, R 3 and R 4 are chosen from hydrogen, methyl or hydroxyl, m=1-6, n=1.

6 . The method of claim 1 , wherein the one or more reaction products are in amounts of 0.25 ppm to 20 ppm in the copper electroplating bath.

7 . The method of claim 1 , wherein electroplating is done at a current density of 0.25 ASD to 40 ASD.

8 . The method of claim 1 , wherein the one or more copper photoresist defined features are pillars, bond pads or line space features.

9 . A plurality of photoresist defined features on a substrate comprising an average % TIR of −5% to −1% and an average % WID of 12% to 15%.

Assignees

• Rohm & Haas Elect Mat
• Dow Global Technologies Llc

Inventors

• Thorseth Matthew
• Niazimbetova Zuhra
• Qin Yi
• Woertink Julia
• Dziewiszek Joanna
• Reddington Erik
• Lefebvre Mark

Classifications

• H10W72/012

  of bump connectors, dummy bumps or thermal bumps · CPC title

• H10W72/01955

  by using masks · CPC title

• H10W72/01935

  by plating, e.g. electroless plating or electroplating · CPC title

• H10W72/01255

  by using masks · CPC title

• H10W72/932

  Plan-view shape, i.e. in top view · CPC title