Pretreatment method, graphene forming method and graphene fabrication apparatus

Patent metadata

Field	Value
Publication number	US-2017029942-A1
Application number	US-201615294971-A
Country	US
Kind code	A1
Filing date	Oct 17, 2016
Priority date	Nov 9, 2011
Publication date	Feb 2, 2017
Grant date	—

Abstract

A pretreatment method is performed before a graphene grows by performing a CVD method on a catalyst metal layer formed on a workpiece. The method includes a plasma treatment process in which the catalyst metal layer is activated by applying plasma of a treatment gas including a reducing gas and a nitrogen-containing gas on the catalyst metal layer.

First claim

1 - 19 . (canceled)

20 . A pretreatment method which is performed before a graphene grows by performing a CVD method on a catalyst metal layer formed on a workpiece, the method comprising:
a plasma treatment process in which the catalyst metal layer is activated by applying plasma of a treatment gas including a reducing gas and a nitrogen-containing gas on the catalyst metal layer, wherein the treatment gas is one set of gases selected from a plurality set of gases consisting of: a first set of gases containing a hydrogen gas as the reducing gas and a nitrogen gas as the nitrogen-containing gas, a second set of gases containing a hydrogen gas as the reducing gas and an ammonia gas as the nitrogen-containing gas, and a third set of gases containing an ammonia gas as the reducing gas and a nitrogen gas as the nitrogen-containing gas.

21 . The method of claim 20 , wherein a volume ratio of the reducing gas to the nitrogen-containing gas is within a range of from 10:1 to 1:10.

22 . The method of claim 20 , wherein the catalyst metal layer is made of one or more kinds of metals selected from the group consisting of Ni, Co, Cu, Ru, Pd and Pt.

23 . A graphene forming method for growing a graphene on a catalyst metal layer formed on a workpiece, the method comprising:
a plasma treatment process in which the catalyst metal layer is activated by applying plasma of a treatment gas including a reducing gas and a nitrogen-containing gas on the catalyst metal layer; and a process of growing the graphene by a CVD method on the catalyst metal layer subjected to the plasma treatment, wherein the treatment gas is one set of gases selected from a plurality set of gases consisting of: a first set of gases containing a hydrogen gas as the reducing gas and a nitrogen gas as the nitrogen-containing gas, a second set of gases containing a hydrogen gas as the reducing gas and an ammonia gas as the nitrogen-containing gas, and a third set of gases containing an ammonia gas as the reducing gas and a nitrogen gas as the nitrogen-containing gas.

24 . The method of claim 23 , wherein the process of growing the graphene is performed by a plasma CVD method.

25 . The method of claim 24 , wherein a treatment temperature of by the plasma CVD method is within a range of from 300 degrees C. to 600 degrees C.

26 . The method of claim 24 , wherein source gas plasma is generated by introducing microwaves into a processing vessel through a planar antenna having a plurality of microwave radiating holes, and the graphene is formed by the source gas plasma.

27 . The method of claim 26 , wherein the planar antenna is a radial line slot antenna.

28 . The method of claim 23 , wherein the process of growing the graphene is performed by a thermal CVD method.

29 . The method of claim 28 , wherein a treatment temperature of the thermal CVD method is within a range of from 300 degrees C. to 600 degrees C.

30 . The method of claim 23 , wherein a volume ratio of the reducing gas to the nitrogen-containing gas is within a range of from 10:1 to 1:10.

31 . The method of claim 23 , wherein the catalyst metal layer is made of one or more kinds of metals selected from the group consisting of Ni, Co, Cu, Ru, Pd and Pt.

Assignees

• Tokyo Electron Ltd

Inventors

• Matsumoto Takashi

Classifications

• C23C16/02 Primary

  Pretreatment of the material to be coated (C23C16/04 takes precedence) · CPC title

• B01J23/75 Primary

  Cobalt · CPC title

• C23C16/511

  using microwave discharges · CPC title

• C01B32/184 Primary

  Preparation · CPC title

• Y10S977/734

  Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc. · CPC title