Polishing compositions and methods of manufacturing semiconductor devices using the same

Patent metadata

Field	Value
Publication number	US-2017029664-A1
Application number	US-201615214847-A
Country	US
Kind code	A1
Filing date	Jul 20, 2016
Priority date	Jul 20, 2015
Publication date	Feb 2, 2017
Grant date	—

Abstract

A polishing composition includes abrasive particles, a pyrrolidone containing a hydrophilic group, a dispersing agent, a first dishing inhibitor including polyacrylic acid, and a second dishing inhibitor including a non-ionic polymer.

First claim

What is claimed is:

1 . A polishing composition, comprising:
abrasive particles; a pyrrolidone containing a hydrophilic group; a dispersing agent; a first dishing inhibitor including polyacrylic acid; and a second dishing inhibitor including a non-ionic polymer.

2 . The polishing composition as claimed in claim 1 , wherein a BET specific surface area before milling of the abrasive particle is in a range from about 3 m 2 /g to about 8 m 2 /g, and a BET specific surface area after milling of the abrasive particle is about 10 m 2 /g or more.

3 . The polishing composition as claimed in claim 2 , wherein the BET specific surface area after milling of the abrasive particle is about 20 m 2 /g or more.

4 . The polishing composition as claimed in claim 1 , wherein the pyrrolidone containing the hydrophilic group includes 1-2-hydroxyethyl-2-pyrrolidone.

5 . The polishing composition as claimed in claim 1 , wherein the dispersing agent includes one or more of an anionic polymer neutralized by a compound including a hydroxyl group or an anionic polymer.

6 . The polishing composition as claimed in claim 5 , wherein the dispersing agent includes one or more of a polyacrylic acid, a salt of the polyacrylic acid, a polymethacrylic acid, a salt of the polymethacrylic acid, a polyacrylic-maleic acid copolymer, or a salt of the polyacrylic-maleic acid copolymer.

7 . The polishing composition as claimed in claim 5 , wherein the anionic polymer has a weight average molecular weight in a range from about 10,000 to about 100,000.

8 . The polishing composition as claimed in claim 1 , wherein the first dishing inhibitor includes a polyacrylic acid having a weight average molecular weight in a range from about 500 to about 10,000.

9 . The polishing composition as claimed in claim 1 , wherein the second dishing inhibitor includes one or more of a polyethyleneglycol, a polyvinylalcohol, glycerine, a polypropyleneglycol, or a polyvinylpyrrolidone.

10 . The polishing composition as claimed in claim 9 , wherein the second dishing inhibitor includes one or more of a polyethyleneglycol, a polyvinylalcohol, glycerine, a polypropyleneglycol, or a polyvinylpyrrolidone that has a weight average molecular weight in a range from about 500 to about 10,000.

11 . The polishing composition as claimed in claim 1 , wherein the composition includes:
about 0.1 weight percent to about 10 weight percent of the abrasive particles; about 0.01 weight percent to about 5 weight percent of the pyrrolidone containing the hydrophilic group; about 0.01 weight percent to about 10 weight percent of the dispersing agent; about 0.05 weight percent to about 5 weight percent of the first dishing inhibitor; about 0.0005 weight percent to about 0.1 weight percent of the second dishing inhibitor; and a remainder of a diluent, based on a total weight of the polishing composition.

12 . A method of manufacturing a semiconductor device, the method comprising:
forming a mask pattern on a substrate, the mask pattern including a nitride; forming a trench by etching an upper portion of the substrate using the mask pattern; forming an oxide layer that fills the trench and covers the mask pattern; and planarizing the oxide layer using the mask pattern as a polishing-stopper and using a polishing composition, wherein the polishing composition includes abrasive particles, a pyrrolidone containing a hydrophilic group, a dispersing agent, a first dishing inhibitor including a polyacrylic acid, and a second dishing inhibitor including a non-ionic polymer.

13 . The method as claimed in claim 12 , wherein planarizing the oxide layer includes adjusting a dishing of the oxide layer with respect to a width of the trench below about 3/5000.

14 . The method as claimed in claim 12 , wherein planarizing the oxide layer includes polishing the oxide layer with a polishing selectivity of the oxide layer with respect to the mask pattern in a range from about 10 to about 50.

15 . The method as claimed in claim 12 , wherein forming the trench includes adjusting a pattern density in a range from about 5% to about 10%, the pattern density being defined as a ratio of a total area of the trench with respect to a unit area of the substrate in a plane view.

16 . A composition, comprising:
a diluent; inorganic particles; a pyrrolidone monomer having one or more hydroxyl groups; a first polyacrylic acid having a weight average molecular weight in a range from about 500 to about 10,000; one or more of:
a second polyacrylic acid having a weight average molecular weight in a range from about 10,000 to about 100,000, an ammonium salt of the second polyacrylic acid, a polymethacrylic acid having a weight average molecular weight in a range from about 10,000 to about 100,000, an ammonium salt of the polymethacrylic acid, a polyacrylic-maleic acid copolymer having a weight average molecular weight in a range from about 10,000 to about 100,000, a salt of the polyacrylic-maleic acid copolymer, a carboxylic acid, a salt of a carboxylic acid, a sulfonic ester, a salt of a sulfonic ester, a sulfonic acid, a salt of a sulfonic acid, a phosphoric ester, or a salt of a phosphoric ester, and one or more of:
a polyethyleneglycol, a polyvinylalcohol, glycerine, a polypropyleneglycol, or a polyvinylpyrrolidone.

17 . The composition as claimed in claim 16 , wherein the composition has a pH that is in a range of about 6 to 7.

18 . The composition as claimed in claim 16 , wherein the pH of the composition is basic or neutral.

19 . The composition as claimed in claim 6 , wherein the composition has an etch selectivity for an oxide layer relative to a nitride layer such that the composition preferentially removes the oxide layer.

20 . A semiconductor device manufactured by the method as claimed in claim 12 .

Assignees

• Samsung Electronics Co Ltd
• K C Tech Co Ltd

Inventors

• Park Seung-Ho
• Jung Ki-Hwa
• Kim Sang-Kyun
• Hwang Jun-Ha
• Kwon Chang-Gil
• Baek Seung-Yeop
• Lee Jae-Woo
• Lee Ji-Sung
• Choi Jae-Kwang
• Hwang Jin-Myung

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10W10/0143

  comprising concurrently refilling multiple trenches having different shapes or dimensions · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title