Polishing composition containing ceria abrasive

Patent metadata

Field	Value
Publication number	US-2016257856-A1
Application number	US-201514639564-A
Country	US
Kind code	A1
Filing date	Mar 5, 2015
Priority date	Mar 5, 2015
Publication date	Sep 8, 2016
Grant date	—

Abstract

The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

First claim

1 . A chemical-mechanical polishing composition comprising:
(a) first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, wherein the first abrasive particles have a surface that comprises tridentate hydroxyl groups, and wherein the first abrasive particles have a surface coverage of tridentate hydroxyl groups that is about 2.0×10 −5 moles/m 2 or more, (b) a functionalized heterocycle selected from a functionalized nitrogen-containing heterocycle, a functionalized sulfur-containing heterocycle, a naphthoic acid, and combinations thereof, wherein the functionalized heterocycle is present in the polishing composition at a concentration of about 100 ppm to about 1500 ppm, (c) a pH-adjusting agent, and (d) an aqueous carrier, wherein the pH of the polishing composition is about 1 to about 6.

2 . (canceled)

3 . The chemical-mechanical polishing composition of claim 1 , wherein a Raman spectrum of the first abrasive particles comprises a peak at about 458 cm −1 and a peak at about 583 cm −1 , and wherein the ratio of the intensity of the peak at about 458 cm −1 to the intensity of the peak at about 583 cm −1 is about 100 or less.

4 . The chemical-mechanical polishing composition of claim 1 , wherein the first abrasive particles are present in the polishing composition at a concentration of about 0.1 wt. % to about 0.5 wt. %.

5 . The chemical-mechanical polishing composition of claim 1 , wherein the functionalized heterocycle comprises a functionalized nitrogen-containing heterocycle selected from picolinic acid, quinaldic acid, and combinations thereof.

6 . The chemical-mechanical polishing composition of claim 1 , wherein the pH-adjusting agent is selected from an alkyl amine, an alcohol amine, a quaternary amine hydroxide, ammonia, and combinations thereof.

7 . The chemical-mechanical polishing composition of claim 6 , wherein the pH-adjusting agent is triethanolamine.

8 . The chemical-mechanical polishing composition of claim 1 , wherein the pH of the polishing composition is about 3.5 to about 5.

9 . The chemical-mechanical polishing composition of claim 1 , wherein the polishing composition further comprises an additive selected from
an anionic copolymer of a carboxylic acid monomer, a sulfonated monomer, or a phosphonated monomer, and an acrylate, a polyvinylpyrrolidone, or a polyvinylalcohol, a nonionic polymer, wherein the nonionic polymer is polyvinylpyrrolidone or polyethylene glycol, a silane, wherein the silane is an amino silane, an ureido silane, or a glycidyl silane, an N-oxide of a functionalized pyridine, a starch, a cyclodextrin, and combinations thereof, wherein the additive is present in the chemical-mechanical polishing composition at a concentration of about 25 ppm to about 500 ppm.

10 . The chemical-mechanical polishing composition of claim 9 , wherein the additive is selected from a copolymer of 2-hydroxyethylmethacrylic acid and methacrylic acid, polyvinylpyrrolidone, aminopropylsilanetriol, picolinic acid N-oxide, starch, alpha-cyclodextrin, beta-cyclodextrin, and combinations thereof.

11 . The chemical-mechanical polishing composition of claim 1 , wherein the polishing composition further comprises:
a cationic polymer, wherein the cationic polymer is a quaternary amine, and wherein the cationic polymer is present in the polishing composition at a concentration of about 1 ppm to about 250 ppm, and a carboxylic acid, wherein the pKa of the carboxylic acid is about 1 to about 6, and wherein the carboxylic acid is present in the polishing composition at a concentration of about 25 ppm to about 500 ppm, wherein the pH of the polishing composition is within about 2 units of the pKa of the carboxylic acid.

12 . The chemical-mechanical polishing composition of claim 11 , wherein the cationic polymer is poly(vinylimidazolium).

13 . The chemical-mechanical polishing composition of claim 11 , wherein the pKa of the carboxylic acid is about 3.5 to about 5.

14 . The chemical-mechanical polishing composition of claim 11 , wherein the carboxylic acid is acetic acid.

15 . The chemical-mechanical polishing composition of claim 1 , wherein the polishing composition further comprises a cationic polymer selected from a cationic polyvinyl alcohol and a cationic cellulose, and wherein the cationic polymer is present in the polishing composition at a concentration of about 1 ppm to about 250 ppm.

16 . A method of polishing a substrate comprising:
(i) providing a substrate; (ii) providing a polishing pad; (iii) providing the chemical-mechanical polishing composition of claim 1 ; (iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and (v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.

17 . A method of polishing a substrate comprising:
(i) providing a substrate, wherein the substrate comprises a silicon oxide layer; (ii) providing a polishing pad; (iii) providing a chemical-mechanical polishing composition comprising:
(a) first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm,
(b) a functionalized heterocycle selected from a functionalized nitrogen-containing heterocycle, a functionalized sulfur-containing heterocycle, a naphthoic acid, and combinations thereof, wherein the functionalized heterocycle is present in the polishing composition at a concentration of about 100 ppm to about 1500 ppm,
(c) a pH-adjusting agent, and
(d) an aqueous carrier,
wherein the pH of the polishing composition is about 1 to about 6;
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and (v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the silicon oxide layer on a surface of the substrate to polish the substrate.

18 . The method of claim 17 , wherein the first abrasive particles have a surface that comprises tridentate hydroxyl groups, and wherein the first abrasive particles have a surface coverage of tridentate hydroxyl groups that is about 2.0×10 −5 moles/m 2 or more.

19 . The method of claim 17 , wherein a Raman spectrum of the first abrasive particles comprises a peak at about 458 cm −1 and a peak at about 583 cm −1 , and wherein the ratio of the intensity of the peak at about 458 cm −1 to the intensity of the peak at about 583 cm −1 is about 100 or less.

20 . The method of claim 17 , wherein the first abrasive particles are present in the polishing composition at a concentration of about 0.1 wt. % to about 0.5 wt. %.

21 . The method of claim 17 , wherein the functionalized heterocycle comprises a functionalized nitrogen-containing heterocycle selected from picolinic acid, quinaldic acid, and combinations thereof.

22 . The method of claim 17 , wherein the pH-adjusting agent is selected from an al

Assignees

• Cabot Microelectronics Corp

Inventors

• Reiss Brian
• Sauter Van Ness Dana
• Lam Viet
• Hains Alexander
• Kraft Steven
• Jia Renhe

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C09K3/1409

  Abrasive particles per se (preparation of diamond C01B32/25) · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title