Non-amine post-cmp compositions and method of use

Patent metadata

Field	Value
Publication number	US-2016351388-A1
Application number	US-201515116372-A
Country	US
Kind code	A1
Filing date	Feb 3, 2015
Priority date	Feb 5, 2014
Publication date	Dec 1, 2016
Grant date	—

Abstract

An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.

First claim

1 . A composition for cleaning residue and contaminants from a surface, said composition comprising at least one complexing agent, at least one basic compound, at least one buffering agent, water, optionally at least one oxidizing agent, optionally at least one reducing agent, and optionally at least one solvating agent, wherein the composition is substantially devoid of amines, quaternary bases, fluoride-containing sources, and abrasive material typically used in chemical mechanical polishing processes.

2 . The composition of claim 1 , wherein pH is in a range from 7 to about 13.

3 . The composition of claim 1 , wherein the at least one basic compound comprise a species selected from the group consisting of KOH, CsOH, ammonium hydroxide, and combinations thereof.

4 . The composition of claim 1 , wherein the at least one basic compound comprises KOH.

5 . The composition of claim 1 , wherein the at least one complexing agent comprises a species selected from the group consisting of lactic acid, maleic acid, ascorbic acid, malic acid, citric acid, benzoic acid, fumaric acid, succinic acid, oxalic acid, malonic acid, mandelic acid, maleic anhydride, phthalic acid, aspartic acid, glutamic acid, glutaric acid, glycolic acid, glyoxylic acid, glycerin, acetylacetone, salicylhydroxamic acid, a salt thereof, or a partially neutralized form thereof, phenylacetic acid, quinic acid, pyromellitic acid, tartaric acid, terephthalic acid, trimellitic acid, trimesic acid, gluconic acid, glyceric acid, formic acid, acetic acid, propionic acid, acrylic acid, adipic acid, itaconic acid, glucuronic acid, glycine, lysine, (3-alanine, histidine, phenylalanine, cysteine, leucine, serine, arginine, threonine, asparagine, glutamine, selenocysteine, proline, valine, isoleucine, methionine, tyrosine, tryptophane, 8-hydroxyquinoline, 2,4-pentanedione, benzetetracarboxylic acid, pyruvic acid, tannic acid, sulfanilic acid, 2-hydroxyphosphonocarboxylic acid (HPAA), pyrocatecol, pyrogallol, gallic acid, tannic acid, ethylenediamine tetraacetic acid (EDTA), diethylenetriaminepentaacetic acid (DTPA), (1,2-cyclohexylenedinitrilo)tetraacetic acid (CDTA), iminidiacetic acid, 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA), phosphonic acid, hydroxyethylidene diphosphonic acid (HEDP), 1-hydroxyethane-1,1-diphosphonic acid, nitrilo-tris(methylenephosphonic acid, ethylenediamine tetra(methylene phosphonic acid (EDTMP), salicylic acid, p-toluenesulfonic acid, 5-sulfosalicylic acid and derivatives thereof, and any combination thereof.

6 . The composition of claim 1 , wherein the at least one complexing agent comprises a phosphonic acid derivative, 5-sulfosalicylic acid or derivatives thereof, an amino acid, and any combination thereof.

7 . The composition of claim 1 , wherein the at least one buffering agent comprises a species selected from the group consisting of dipotassium phosphate, potassium carbonate, boric acid, lysine, proline, β-alanine, ethylenediamine tetraacetic acid (EDTA), diethylenetriaminepentaacetic acid (DTPA), dimethyl glyoxime, dibasic phosphate (K 2 HPO 4 ), tribasic phosphate (K 3 PO 4 ), mixtures of dibasic and tribasic phosphate, mixures of dibasic and tribasic carbonate, hydroxyethylidene diphosphonic acid, and combinations thereof.

8 . The composition of claim 1 , wherein the at least one buffering agent comprises a species selected from the group consisting of dibasic phosphate (K 2 HPO 4 ), tribasic phosphate (K 3 PO 4 ), mixtures of dibasic and tribasic phosphate, HEDP, and combinations thereof.

9 . The composition of claim 1 , comprising the at least one oxidizing agent, wherein the at least one oxidizing agent comprises a species selected from the group consisting of ozone, nitric acid, bubbled air, cyclohexylaminosulfonic acid, hydrogen peroxide, FeCl 3 , oxone (2KHSO 5 •KHSO 4 •K 2 SO 4 ), ammonium peroxomonosulfate, ammonium chlorite, ammonium chlorate, ammonium iodate, ammonium perborate, ammonium perchlorate, ammonium periodate, ammonium persulfate, ammonium hypochlorite, sodium perborate, sodium persulfate, sodium hypochlorite, potassium iodate, potassium permanganate, potassium persulfate, potassium persulfate, potassium hypochlorite, tetramethylammonium chlorite, tetramethylammonium chlorate, tetramethylammonium iodate, tetramethylammonium perborate, tetramethylammonium perchlorate, tetramethylammonium periodate, tetramethylammonium persulfate, tetrabutylammonium peroxomonosulfate, peroxomonosulfuric acid, ferric nitrate, N-methylmorpholine-N-oxide, trimethylamine-N-oxide, triethylamine-N-oxide, pyridine-N-oxide, N-ethylmorpholine-N-oxide, N-methylpyrrolidine-N-oxide, N-ethylpyrrolidine-N-oxide, urea hydrogen peroxide, peracetic acid, periodic acid, potassium dichromate, potassium chlorate, 2-nitrophenol, 1,4-benzoquinone, peroxybenzoic acid, peroxyphthalic acid salts, vanadium oxides, ammonium metavanadate, ammonium tungstate, sodium nitrate, potassium nitrate, ammonium nitrate, strontium nitrate, sulfuric acid, and combinations thereof.

10 . The composition of claim 9 , wherein the at least one oxidizing agent comprises a species selected from the group consisting of hydrogen peroxide, NMMO, urea hydrogen peroxide, and combinations thereof.

11 . The composition of claim 1 , comprising at least one reducing agent, wherein the at least one reducing agent comprises a species selected from the group consisting of ascorbic acid, glycine, gallic acid, potassium disulfite, n-acetyl glycine, potassium tetraborate tetrahydate, glycerin, acetylacetone, sorbitol, sorbate, sorbic acid, and combinations thereof.

12 . The composition of claim 1 , further comprising at least one solvating agent comprising a species selected from the group consisting of 2-pyrrolidinone, 1-(2-hydroxyethyl)-2-pyrrolidinone, glycerol, 1,4-butanediol, tetramethylene sulfone (sulfolane), dimethyl sulfone, ethylene glycol, propylene glycol, dipropylene glycol, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, diethylene glycol monoethyl ether, triethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, ethylene glycol monohexyl ether, diethylene glycol monohexyl ether, ethylene glycol phenyl ether, propylene glycol methyl ether, dipropylene glycol methyl ether (DPGME), tripropylene glycol methyl ether (TPGME), dipropylene glycol dimethyl ether, dipropylene glycol ethyl ether, propylene glycol n-propyl ether, dipropylene glycol n-propyl ether (DPGPE), tripropylene glycol n-propyl ether, propylene glycol n-butyl ether, dipropylene glycol n-butyl ether, tripropylene glycol n-butyl ether, propylene glycol phenyl ether, and combinations thereof.

13 . The composition of claim 1 , further comprising at least one solvating agent comprising sulfolane, 1-(2-hydroxyethyl)-2-pyrrolidinone, and combinations thereof.

14 . The composition of claim 1 , wherein the composition comprises urea hydrogen peroxide, KOH, KH 2 PO 4 , 5-sulfosalicylic, and water, and the pH is in a range from about 7 to about 13.

15 . The composition of claim 1 , wherein the residue and contaminants comprise post-CMP residue and contaminants selected from the group consisting of particles from a CMP polishing slurry, chemicals present in the CMP polishing slurry, reaction by-products of the CMP polishing slurry, carbon-rich particles, polishing pad particles, copper, and copper oxides.

16 . The composition of claim 1 , further comprising post-CMP residue and contaminants

17 . A method of cleaning residue and contaminants from a micr

Assignees

• Entegris Inc

Inventors

• Liu Jun
• Thomas Elizabeth
• Frye Donald

Classifications

• H10P70/277 Primary

  the processing being a planarisation of conductive layers · CPC title

• C11D7/261

  Alcohols; Phenols · CPC title

• C11D7/04

  Water-soluble compounds · CPC title

• C11D7/267

  Heterocyclic compounds · CPC title

• C11D7/12

  Carbonates {bicarbonates} · CPC title