Process chamber with reflector

Patent metadata

Field	Value
Publication number	US-2016348276-A1
Application number	US-201615167480-A
Country	US
Kind code	A1
Filing date	May 27, 2016
Priority date	May 29, 2015
Publication date	Dec 1, 2016
Grant date	—

Abstract

A reflector for processing a semiconductor substrate is provided. The reflector includes an annular body having an outer edge, an inner edge, and a bottom side. The bottom side includes a plurality of first surfaces and a plurality of second surfaces. Each first surface and each second surface is positioned at a different angular location around the annular body. Each first surface is a curved surface having a radius of curvature from about 1.50 inches to about 2.20 inches.

First claim

1 . A reflector for processing a semiconductor substrate comprising:
an annular body having an outer edge, an inner edge, and a bottom side, the bottom side including a plurality of first surfaces and a plurality of second surfaces, wherein
each first surface and each second surface is positioned at a different angular location around the annular body; and
each first surface is a curved surface having a radius of curvature from about 1.50 inches to about 2.20 inches.

2 . The reflector of claim 1 , wherein the radius of curvature is from about 2.02 inches to about 2.10 inches.

3 . The reflector of claim 1 , wherein the bottom side includes 20 first surfaces and 12 second surfaces.

4 . The reflector of claim 1 , wherein the first reflecting surfaces are formed of gold.

5 . The reflector of claim 1 , wherein each first surface has a cylindrical shape extending in a direction from the outer edge towards the inner edge of the reflector.

6 . The reflector of claim 1 , wherein the plurality of first surfaces and the plurality of second surfaces are disposed in a circular array, wherein each second surface is disposed adjacent to, and between, two first surfaces in the circular array.

7 . The reflector of claim 6 , wherein the plurality of first surfaces includes four pairs of first surfaces, and each pair of first surfaces consists of two first surfaces that share an edge.

8 . The reflector of claim 7 , wherein the circular array includes at least one second surface adjacent to, and between, consecutive pairs of first surfaces.

9 . The reflector of claim 1 , wherein each second surface is substantially flat.

10 . A reflector for processing a semiconductor substrate comprising:
an annular body having an outer edge, an inner edge, and a bottom side, the bottom side including 20 first surfaces and 12 second surfaces, wherein
each first surface and each second surface is positioned at a different angular location around the annular body;
each first surface is a curved surface having a radius of curvature from about 2.02 inches to about 2.10 inches; and
each second surface is disposed adjacent to, and between, two first surfaces.

11 . A process chamber comprising:
a sidewall; a substrate support; a first reflector disposed above the substrate support, the first reflector comprising:
an annular body having an outer edge, an inner edge, and a bottom side, the bottom side including a plurality of first surfaces and a plurality of second surfaces, wherein
each first surface and each second surface is positioned at a different angular location around the annular body; and
each first surface is a curved surface having a radius of curvature from about 1.50 inches and about 2.20 inches.

12 . The process chamber of claim 11 , wherein the radius of curvature is from about 2.02 inches to about 2.10 inches.

13 . The process chamber of claim 12 , wherein the bottom side of the reflector includes 20 first surfaces and 12 second surfaces.

14 . The process chamber of claim 11 , wherein a lamp is disposed between each first surface and the substrate support.

15 . The process chamber of claim 11 , wherein the reflector further comprises an outer rim disposed above and outward of the bottom side of the annular body.

16 . The process chamber of claim 13 , wherein the plurality of first surfaces and the plurality of second surfaces of the reflector are disposed in a circular array, wherein each second surface is disposed adjacent to, and between, two first surfaces.

17 . The process chamber of claim 16 , wherein the circular array includes four pairs of first surfaces, and each pair of first surfaces consists of two first surfaces that share an edge.

18 . The process chamber of claim 17 , wherein the circular array includes four structures, each structure comprising a first surface disposed adjacent to, and between, two second surfaces.

19 . The process chamber of claim 11 , wherein each second surface of the reflector is substantially flat.

20 . The process chamber of claim 11 , further comprising a second reflector surrounding the first reflector.

Assignees

• Applied Materials Inc

Inventors

• Lau Shu-Kwan
• Kumar Surajit
• Shah Kartik
• Samir Mehmet Tugrul

Classifications

• C30B25/08 Primary

  Reaction chambers; Selection of materials therefor · CPC title

• C30B25/165 Primary

  the flow of the reactive gases · CPC title

• C23C16/482 Primary

  using incoherent light, UV to IR, e.g. lamps · CPC title

• C30B25/105

  by irradiation or electric discharge · CPC title

• C23C16/481 Primary

  by radiant heating of the substrate · CPC title