Reduction of defect induced leakage in iii-v semiconductor devices

Patent metadata

Field	Value
Publication number	US-2016336408-A1
Application number	US-201615135148-A
Country	US
Kind code	A1
Filing date	Apr 21, 2016
Priority date	May 11, 2015
Publication date	Nov 17, 2016
Grant date	—

Abstract

A semiconductor device includes a semiconductor substrate and a p-doped layer formed on the substrate having a dislocation density exceeding 10 8 cm −2 . An n-type layer is formed on or in the p-doped layer. The n-type layer includes a II-VI material configured to tolerate the dislocation density to form an electronic device with reduced leakage current over a device with a III-V n-type layer.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a p-doped layer formed on a substrate having a dislocation density; and an n-type layer formed on or in the p-doped layer, the n-type layer including a II-VI material configured to tolerate the dislocation density to form an electronic device with reduced leakage current over a device with a III-V n-type layer.

2 . The semiconductor device as recited in claim 1 , further comprising a buffer layer disposed between the p-doped layer and the substrate, wherein the buffer layer includes at least one layer configured to lattice match adjacent layers.

3 . The semiconductor device as recited in claim 2 , wherein the buffer layer includes a plurality of layers configured to lattice match adjacent layers.

4 . The semiconductor device as recited in claim 2 , wherein the buffer layer includes at least one of Ge, a III-V material, GaAs, InP, or combination thereof.

5 . The semiconductor device as recited in claim 1 , wherein the material for the n-type layer includes a II-VI material.

6 . The semiconductor device as recited in claim 1 , wherein the n-type layer includes at least one of a doped ZnO or an ITO.

7 . The semiconductor device as recited in claim 1 , wherein the n-type layer includes a carrier concentration of between about 1×10 21 cm −3 to about 5×10 21 cm −3 .

8 . The semiconductor device as recited in claim 1 , wherein the n-type layer includes an amorphous phase.

9 . The semiconductor device as recited in claim 1 , wherein the substrate includes silicon and the p-doped layer includes a III-V material.

10 . The semiconductor device as recited in claim 1 , wherein the n-type layer forms source and drain regions for a field effect transistor.

11 . The semiconductor device as recited in claim 1 , wherein the n-type layer forms a diode junction.

12 . The semiconductor device as recited in claim 1 , wherein the electronic device includes an on/off ratio of greater than 1×10 3 .

13 . The semiconductor device as recited in claim 1 , wherein the reduced leakage current is reduced by at least two orders of magnitude.

14 . The semiconductor device as recited in claim 1 , wherein the dislocation density exceeds 10 8 cm −2 .

15 . A semiconductor device, comprising:
a Si semiconductor substrate; a buffer formed on the substrate; an InGaAs p-doped layer formed on the buffer; and a ZnO n-type layer formed on or in the p-doped layer, the n-type layer configured to tolerate dislocation density to form an electronic device with reduced leakage current over a device with a III-V n-type layer.

16 . The semiconductor device as recited in claim 15 , wherein the buffer layer includes a plurality of layers configured to lattice match adjacent layers.

17 . The semiconductor device as recited in claim 15 , wherein the n-type layer includes an amorphous phase.

18 . The semiconductor device as recited in claim 15 , wherein the n-type layer forms one of source and drain regions for a field effect transistor or a diode junction.

19 . The semiconductor device as recited in claim 15 , wherein the leakage current is reduced by at least two orders of magnitude.

20 . The semiconductor device as recited in claim 15 , wherein the electronic device includes an on/off ratio of greater than 1×10 3 .

Assignees

• IBM

Inventors

• De Souza Joel P
• Kim Jeehwan
• Sadana Devendra K
• Wacaser Brent A

Classifications

• H10D62/864

  further characterised by the dopants · CPC title

• H10D62/149

  Source or drain regions of field-effect devices · CPC title

• H10D62/86

  being Group II-VI materials, e.g. ZnO · CPC title

• H10D62/85

  being Group III-V materials, e.g. GaAs · CPC title

• H10D8/422

  PN diodes having the PN junctions in mesas · CPC title