Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
US-2024047583-A1 · Feb 8, 2024 · US
being Group II-VI materials, e.g. ZnO
being Group II-VI materials, e.g. ZnO · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D62/86 |
| Official title | being Group II-VI materials, e.g. ZnO |
| Display label | being Group II-VI materials, e.g. ZnO |
| Total patents | 568 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 58 |
| 2016 | 83 |
| 2017 | 71 |
| 2018 | 72 |
| 2019 | 54 |
| 2020 | 47 |
| 2021 | 58 |
| 2022 | 31 |
| 2023 | 33 |
| 2024 | 35 |
| 2025 | 20 |
| 2026 | 6 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Sputtering target, oxide semiconductor thin film, and method for producing these
US-2016293412-A1 · Oct 6, 2016 · US
P-type metal oxide semiconductor material and method for fabricating the same
US-9224599-B2 · Dec 29, 2015 · US
Quantum rod and method of fabricating the same
US-9224920-B2 · Dec 29, 2015 · US
Nanocrystal thin film fabrication methods and apparatus
US-2015364324-A1 · Dec 17, 2015 · US
Semiconductor device
US-2015364606-A1 · Dec 17, 2015 · US
Semiconductor device
US-9214520-B2 · Dec 15, 2015 · US
Semiconductor device
US-2015349134-A1 · Dec 3, 2015 · US
Nanocrystals containing CdTe core with CdS and ZnS coatings
US-9202867-B2 · Dec 1, 2015 · US
Semiconductor device and method for driving the same
US-2015340392-A1 · Nov 26, 2015 · US
Crystalline multilayer structure and semiconductor device
US-2015325660-A1 · Nov 12, 2015 · US
Semiconductor device, method of manufacturing the same and method of operating the same
US-2015325694-A1 · Nov 12, 2015 · US
High efficiency broadband semiconductor nanowire devices
US-2015325743-A1 · Nov 12, 2015 · US
Crystalline multilayer structure and semiconductor device
US-2015325659-A1 · Nov 12, 2015 · US
Semiconductor Device with a Field Ring Edge Termination Structure and a Separation Trench Arranged Between Different Field Rings
US-2015318347-A1 · Nov 5, 2015 · US
Precursor composition and method for forming amorphous conductive oxide film
US-9178022-B2 · Nov 3, 2015 · US
Bonded epitaxial oxide structures for compound semiconductor on silicon substrates
US-2015303251-A1 · Oct 22, 2015 · US
P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, A ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND AN N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE
US-2015287794-A1 · Oct 8, 2015 · US
Semiconductor device and method for evaluating semiconductor device
US-9153649-B2 · Oct 6, 2015 · US
Semiconductor device and a method for manufacturing a semiconductor device
US-9153588-B2 · Oct 6, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D62/86?
- CPC H10D62/86 is the Cooperative Patent Classification code for “being Group II-VI materials, e.g. ZnO.”
- How many patents are filed under CPC H10D62/86 (being Group II-VI materials, e.g. ZnO)?
- Our database includes 568 publications tagged with this CPC code.
- Is patent activity under CPC H10D62/86 growing?
- Publication counts under this code: 35 in 2024 vs 20 in 2025 (latest complete years).