Electrodeposition system and method incorporating an anode having a back side capacitive element
US-2015376812-A1 · Dec 31, 2015 · US
US2016312373A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016312373-A1 |
| Application number | US-201615198787-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 30, 2016 |
| Priority date | Dec 1, 2010 |
| Publication date | Oct 27, 2016 |
| Grant date | — |
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An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.
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1 - 20 . (canceled) 21 . A continuous method of simultaneously plating a first metal and a second more noble metal onto a substrate, the method comprising: (a) providing an anolyte containing ions of the first metal but not the second metal in an anode chamber comprising an active anode comprising the first metal; (b) providing a catholyte containing ions of both the first metal and the second metal in a cathode chamber, wherein the anode chamber and the cathode chamber are separated by a separation structure therebetween; and (c) simultaneously plating the first and the second metal onto the substrate, while substantially preventing ions of the second metal from entering the anode chamber, while delivering an acid solution to the anode chamber from a source outside the anode chamber, while removing a portion of the catholyte to make room for a volume of fluid material that is transferring from the anode chamber to the cathode chamber, while delivering ions of the second metal to the cathode chamber, while transporting water through the separation structure from the anolyte to the catholyte; and while delivering anolyte from the anode chamber to the cathode chamber via a conduit other than the separation structure, wherein the volume of fluid material that is transferring from the anode chamber to the cathode chamber comprises water volume transported through the separation structure from the anolyte to the catholyte, and the anolyte volume delivered from the anode chamber to the cathode chamber via the conduit other than the separation structure; and wherein the catholyte and anolyte comprise acid and wherein the concentration of protons in the catholyte is maintained such that it does not fluctuate by more than about 10% over the period of at least about 0.2 bath charge turnovers. 22 . The method of claim 21 , wherein the first metal is tin and the second metal is silver. 23 . The method of claim 21 , wherein the separation structure comprises a cationic membrane, configured for transporting protons, water, and ions of the first metal from anolyte to catholyte during plating. 24 . The method of claim 22 , wherein delivering silver ions to the catholyte comprises delivering a solution containing silver ions to the catholyte from a source outside the catholyte and/or electrochemically dissolving an auxiliary silver anode fluidically connected with the catholyte. 25 . The method of claim 22 , wherein the catholyte comprises silver ions in a concentration of between about 0.5 and 1.5 grams/liter and comprises tin ions in a concentration of between about 30 and 80 grams/liter. 26 . The method of claim 23 , wherein the anolyte is substantially free of organic plating additives, and wherein the catholyte comprises organic plating additives. 27 . The method of claim 21 , wherein the composition of anolyte and catholyte is maintained substantially constant using a coulometric control. 28 . The method of claim 21 , wherein the composition of anolyte and catholyte is maintained substantially constant using a coulometric control and feedback signals related to concentrations of electrolyte components. 29 . The method of claim 22 , wherein the catholyte and anolyte comprise tin, and wherein the method further comprises regenerating tin from removed portions of catholyte, wherein said regeneration comprises separating tin from silver by electrowinning silver at a controlled potential. 30 . The method of claim 29 , further comprising delivering a tin-containing silver-free solution formed after electrowinning to the anode chamber. 31 . The method of claim 21 , wherein the substrate is an integrated circuit chip, and wherein the first metal is low alpha tin. 32 . The method of claim 21 further comprising the steps of: applying a photoresist to the substrate; exposing the photoresist to light; patterning the photoresist and transferring the pattern to the substrate; and selectively removing the photoresist from the substrate.
containing more than 50% by weight of tin · CPC title
of alloys · CPC title
Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title
Controlled addition of electrolyte components · CPC title
of noble metals · CPC title
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