Method for surface treatment of upper electrode, plasma processing apparatus and upper electrode

Patent metadata

Field	Value
Publication number	US-2016307741-A1
Application number	US-201615130188-A
Country	US
Kind code	A1
Filing date	Apr 15, 2016
Priority date	Apr 20, 2015
Publication date	Oct 20, 2016
Grant date	—

Abstract

In a method for surface treatment of an upper electrode, a first step is performed to roughen a facing surface of the upper electrode facing a lower electrode while depositing a CF-based deposit on the facing surface by using a plasma of a processing gas by supplying a first and second high frequency powers to the lower and upper electrode. A second step is performed to remove a part of the CF-based deposit by using a plasma of a processing gas by supplying the second high frequency power to the upper electrode only, and a third step is performed to remove the CF-based deposit remaining in the second step by using a plasma of a processing gas by supplying the first and second high frequency powers to the lower and upper electrode. Further, the first, second and third steps are repeated multiple times.

First claim

What is claimed is:

1 . A method for surface treatment of an upper electrode, comprising:
a first step of roughening a facing surface of the upper electrode, which faces a lower electrode, while depositing a CF-based deposit on the facing surface by using a plasma of a processing gas containing a CF-based gas, O 2 gas and Ar gas by respectively supplying a first and a second high frequency power to the lower electrode and the upper electrode; a second step of removing a part of the CF-based deposit from the facing surface by using a plasma of a processing gas containing O 2 gas by supplying the second high frequency power to the upper electrode only; and a third step of removing the CF-based deposit remaining in the second step from the facing surface by using a plasma of a processing gas containing O 2 gas by respectively supplying the first and the second high frequency power to the lower electrode and the upper electrode, wherein the first, second and third steps are repeated multiple times.

2 . The method of claim 1 , wherein the CF-based gas is C 4 F 6 gas.

3 . The method of claim 1 , wherein the third step is executed in a state where the first high frequency power supplied to the lower electrode is smaller than the second high frequency power supplied to the upper electrode.

4 . The method of claim 1 , wherein a processing time of the first step is in a range from 5 sec to 180 sec.

5 . The method of claim 1 , wherein a frequency of the second high frequency power supplied to the upper electrode is higher than a frequency of the first high frequency power supplied to the lower electrode.

6 . The method of claim 1 , wherein the first, second and third steps are repeated 100 times or more.

7 . The method of claim 1 , wherein the upper electrode is a new one installed in a plasma processing apparatus.

8 . A plasma processing apparatus comprising:
a processing chamber; a gas supply unit configured to supply a processing gas into the processing chamber; a lower electrode provided in the processing chamber and configured to mount thereon a target object to be processed; an upper electrode provided in the processing chamber to face the lower electrode; and a control unit configured to execute a first step of roughening a facing surface of the upper electrode, which faces the lower electrode, while depositing a CF-based deposit on the facing surface by using a plasma of a processing gas containing a CF-based gas, O 2 gas and Ar gas by respectively supplying a first and a second high frequency power to the lower electrode and the upper electrode; a second step of removing a part of the CF-based deposit from the facing surface by using a plasma of a processing gas containing O 2 gas by supplying the second high frequency power to the upper electrode only; and a third step of removing the CF-based deposit remaining in the second step from the facing surface by using a plasma of a processing gas containing O 2 gas by respectively supplying the first and the second high frequency power to the lower electrode and the upper electrode, wherein the first, second and third steps are repeated multiple times.

9 . An upper electrode manufactured by a method for surface treatment of an upper electrode, the method including a first step of roughening a facing surface of the upper electrode, which faces the lower electrode, while depositing a CF-based deposit on the facing surface by using a plasma of a processing gas containing a CF-based gas, O 2 gas and Ar gas by respectively supplying a first and a second high frequency power to the lower electrode and the upper electrode; a second step of removing a part of the CF-based deposit from the facing surface by using a plasma of a processing gas containing O 2 gas by supplying the second high frequency power to the upper electrode only; and a third step of removing the CF-based deposit remaining in the second step from the facing surface by using a plasma of a processing gas containing O 2 gas by respectively supplying the first and the second high frequency power to the lower electrode and the upper electrode, wherein the first, second and third steps are repeated multiple times.

Assignees

• Tokyo Electron Ltd

Inventors

• Aoki Yusuke

Classifications

• H01J37/32862

  In situ cleaning of vessels and/or internal parts · CPC title

• H01J37/32559

  Protection means, e.g. coatings · CPC title

• H01J37/32532

  Electrodes · CPC title

• H05H1/46

  using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title

• H01J37/321

  the radio frequency energy being inductively coupled to the plasma · CPC title