Process gas preheating systems and methods for double-sided multi-substrate batch processing

Patent metadata

Field	Value
Publication number	US-2016298263-A1
Application number	US-201615092875-A
Country	US
Kind code	A1
Filing date	Apr 7, 2016
Priority date	Apr 7, 2015
Publication date	Oct 13, 2016
Grant date	—

Abstract

In some embodiments, an substrate processing system may include a chamber body, a heater assembly disposed within the chamber body, wherein the heater assembly includes a plurality of resistive heater elements coupled together to form an isothermal heated enclosure, and a process kit disposed within the isothermal heated enclosure and having an inner processing volume that includes a plurality of substrate supports to support substrates when disposed thereon, wherein the process kit includes a first processing gas inlet to provide processing gases to the inner processing volume, a first carrier gas inlet to provide a carrier gas to the inner processing volume, and a first exhaust outlet, and a first gas heater coupled via a first conduit to the first carrier gas inlet to heat the carrier gas prior to flowing into the inner processing volume.

First claim

1 . A substrate processing system, comprising:
a chamber body; a heater assembly disposed within the chamber body, wherein the heater assembly includes a plurality of resistive heater elements coupled together to form a heated enclosure; a process kit disposed within the heated enclosure and having an inner processing volume that includes a plurality of substrate supports to support substrates when disposed thereon, wherein the process kit includes a first processing gas inlet to provide processing gases to the inner processing volume, a first carrier gas inlet to provide a carrier gas to the inner processing volume, and a first exhaust outlet; and a first gas heater coupled via a first conduit to the first carrier gas inlet to preheat the carrier gas prior to entering the inner processing volume.

2 . The substrate processing system of claim 1 , further comprising:
a second gas heater coupled via a second conduit to the first processing gas inlet to preheat the processing gases prior to entering the inner processing volume.

3 . The substrate processing system of claim 1 , wherein the first processing gas inlet and the first carrier gas inlet are disposed on a first end of the process kit and configured to flow the processing gases and the carrier gas in a first direction.

4 . The substrate processing system of claim 3 , further comprising:
a first mixing plenum disposed within the inner processing volume proximate the first processing gas inlet and the first carrier gas inlet to mix the processing gas and the preheated carrier gas.

5 . The substrate processing system of claim 4 , wherein the first mixing plenum includes one of a plurality of baffles or a static swirl mixer, each of which is configured to mix the processing gases and the preheated carrier gas.

6 . The substrate processing system of claim 5 , wherein the process kit further includes a second processing gas inlet to provide the processing gas to the inner processing volume, and a second carrier gas inlet to provide the carrier gas to the inner processing volume, wherein the first processing gas inlet and the second carrier gas inlet are disposed on a second end of the process kit opposite the first end, and are configured to flow the processing gases and the carrier gas in a second direction opposite the first direction.

7 . The substrate processing system of claim 6 , further comprising:
a second mixing plenum disposed within the inner processing volume proximate the second processing gas inlet and the second carrier gas inlet to mix the processing gas and the preheated carrier gas.

8 . The substrate processing system of claim 1 , wherein the plurality of substrate supports retain a plurality of substrates parallel to each other when disposed in the plurality of substrate supports.

9 . The substrate processing system of claim 4 , wherein the plurality of substrate supports retain the plurality of substrates along outer edges of the substrates while exposing both processing surfaces of the substrates to the mix of the processing gases and the preheated carrier gas.

10 . The substrate processing system of claim 9 , wherein the heater assembly is configured to externally heat the process kit.

11 . The substrate processing system of claim 10 , wherein the preheated carrier gas and the heater assembly are configured to control a temperature of the substrate to enable simultaneous double-sided processing of the substrate.

12 . The substrate processing system of claim 1 , wherein the heater assembly is a multi-zone resistive heater assembly that includes a plurality of independently controlled heating zones.

13 . The substrate processing system of claim 1 , wherein each of the plurality of resistive heater elements that form the heated enclosure are independently controllable.

14 . The substrate processing system of claim 1 , wherein the heater assembly completely encloses the process kit in an isothermal environment.

15 . The substrate processing system of claim 1 , wherein each of the resistive heater elements include a high purity silicon carbide (SiC) coating disposed on a graphite base, and wherein a thickness of the silicon coating is about 50 microns to about 100 microns.

16 . The substrate processing system of claim 15 , wherein the graphite base is configured as a plurality of pickets through which electricity flows to heat the graphite base, and wherein each of the pickets are separated by gaps.

17 . The substrate processing system of claim 16 , further comprising:
a plurality of electrical feedthrough heater posts coupled to the graphite base to provide electricity to the resistive heater elements, wherein the plurality of electrical feedthrough heater posts include:
a graphite heater post;
a ceramic tube disposed about the graphite heater post;
a heater post socket have a central opening, wherein the graphite heater post and the ceramic tube are disposed within the central opening, wherein the heater post socket comprises a base formed of nickel and one or more fluid cooling conduits formed within the base; and
a graphite heater post expansion plug disposed in a top opening of the graphite heater post and configured to couple the graphite heater post to a resistive heater plate.

18 . A method for performing double-sided epitaxial deposition, comprising:
disposing a plurality of substrates onto a corresponding plurality of substrate supports disposed in an inner processing volume of a process kit in an isothermal resistively heated enclosure; heating the process kit via an external heater assembly; preheating a carrier gas prior to entering the inner processing volume via a first gas heater; flowing preheated carrier gas within the inner processing volume to remove native oxide from the substrate and to hydrogen anneal both processing surfaces of each of the plurality of substrates; mixing the preheated carrier gas and a processing gases in a first mixing plenum disposed within the inner processing volume; and flowing the mixed preheated carrier gas and the processing gases in a first direction over both processing surfaces of each of the plurality of substrates.

19 . The method of claim 18 , further comprising:
flowing the mixed preheated carrier gas and the processing gases in a second direction, opposite the first direction, over both processing surfaces of each of the plurality of substrates.

20 . The method of claim 18 , wherein the external heater assembly and the preheated carrier gas control a temperature of each processing surface of the plurality of substrates to enable double-sided epitaxial layer growth on the plurality of substrates.

Assignees

• Applied Materials Inc

Inventors

• Ishikawa David Masayuki
• Steffas Paul J
• Acharya Sumedh
• Burrows Brian H

Classifications

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P72/7621

  characterised by supporting two or more semiconductor substrates · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0434

  mainly by convection · CPC title