Vertical Heat Treatment Apparatus

US2016289833A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016289833-A1
Application numberUS-201615082442-A
CountryUS
Kind codeA1
Filing dateMar 28, 2016
Priority dateMar 31, 2015
Publication dateOct 6, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A vertical heat treatment apparatus includes a plurality of gas supply pipes installed in one of left-right-half regions of a reaction vessel and configured to supply a process gas to division regions obtained by dividing a processing region; an exhaust opening formed in a wall of the reaction vessel in the other of the left-right-half regions; and a vacuum exhaust path in communication with the exhaust opening. The plurality of gas supply pipes are installed to extend from an inner wall portion of the reaction vessel at a position lower than the processing region. At least one of the gas supply pipes includes a bent portion formed by bending downward a leading end portion that is extended upward, and a plurality of gas discharge holes are formed at a downstream side from the bent portion.

First claim

Opening claim text (preview).

What is claimed is: 1 . A vertical heat treatment apparatus of performing a heat treatment by supplying process gases to a plurality of substrates, which are held in a shelf fashion by a substrate holder in a vertical reaction vessel that is surrounded by a heating part, the vertical heat treatment apparatus comprising: a plurality of gas supply pipes configured to supply the process gases to a plurality of division regions obtained by dividing a processing region, in which the substrates arranged in a longitudinal direction of the reaction vessel, the plurality of gas supply pipes being installed in one of a left-half region and a right-half region of the reaction vessel when viewed from the top of the reaction vessel; an exhaust opening formed in a wall of the reaction vessel in the other of the left-half region and the right-half region along the longitudinal direction; and a vacuum exhaust path in communication with the exhaust opening, wherein the plurality of gas supply pipes are installed to extend from an inner wall portion of the reaction vessel at a position lower than the processing region in which the substrates are arranged and to extend upward, and each of the plurality of gas supply pipes includes a plurality of gas discharge holes formed in the longitudinal direction at a height position corresponding to the respective division region, wherein at least one of the plurality of gas supply pipes includes a bent portion formed by bending downward a leading end portion that is extended upward, and the plurality of gas discharge holes are formed at a downstream side from the bent portion, and wherein, assuming that a length from a base end portion of a gas supply path positioned in the reaction vessel up to an upstream side of a gas discharge hole which is positioned at the most upstream side in an array of the plurality of gas discharge holes formed in a respective gas supply pipe is referred to as an travel distance, the travel distance of one of the gas supply pipes is set to fall within ±10% of the travel distance of the other gas supply pipes. 2 . The vertical heat treatment apparatus of claim 1 , wherein arrangement pitches of the plurality of gas discharge holes formed in the plurality of gas supply pipes corresponding to the processing region are all set to the same dimension, and wherein, assuming that a distance in the height direction between a gas discharge hole positioned at the lowermost side in the array of the plurality of gas discharge holes of the gas supply pipe that covers an upper division region among the division regions adjacent to each other, and a gas discharge hole positioned at the uppermost side in the array of the plurality of gas discharge holes of the gas supply pipe that covers a lower division region among the division regions is d 1 , and the arrangement pitch is d 0 , a difference between the distance d 1 and the arrangement pitch d 0 is set to fall within ±10% of the arrangement pitch d 0 . 3 . The vertical heat treatment apparatus of claim 1 , wherein each of the plurality of gas supply pipes includes a bent portion formed by bending downward a leading end portion that is extended upward, and the plurality of gas discharge holes are formed at a downstream side from the bent portion. 4 . The vertical heat treatment apparatus of claim 1 , wherein the vacuum exhaust path in communication with the exhaust opening extends to a lower side along the reaction vessel and is connected to an exhaust pipe at the lower side, and wherein the opening area of the exhaust opening is larger than a cross sectional area of the exhaust pipe.

Assignees

Inventors

Classifications

  • mainly by convection · CPC title

  • Elongated nozzles, tubes with holes · CPC title

  • the substrate being supported substantially horizontally · CPC title

  • Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

  • characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

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What does patent US2016289833A1 cover?
A vertical heat treatment apparatus includes a plurality of gas supply pipes installed in one of left-right-half regions of a reaction vessel and configured to supply a process gas to division regions obtained by dividing a processing region; an exhaust opening formed in a wall of the reaction vessel in the other of the left-right-half regions; and a vacuum exhaust path in communication with th…
Who is the assignee on this patent?
Tokyo Electron Ltd
What technology area does this patent fall under?
Primary CPC classification C23C16/45578. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Oct 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).