Copper Interconnect Device Including Surface Functionalized Graphene Capping Layer and Fabrication Method Thereof

Patent metadata

Field	Value
Publication number	US-2016270237-A1
Application number	US-201615063497-A
Country	US
Kind code	A1
Filing date	Mar 7, 2016
Priority date	Mar 10, 2015
Publication date	Sep 15, 2016
Grant date	—

Abstract

Disclosed is a copper interconnection device including a surface-functionalized graphene capping layer and a method of fabricating the same, wherein electromigration of a fine copper interconnection can be suppressed by the capping layer having a thickness of ones of nm or less. Specifically, graphene is surface-functionalized to possess functional groups able to chemically interact with copper atoms and is thus used as the capping layer, whereby it is difficult to move the copper atoms through the chemical interaction with the functional groups by the use of only the capping layer as thin as ones of nm or less, effectively suppressing electromigration of the copper interconnection.

First claim

What is claimed is:

1 . A copper interconnection device, comprising:
a copper pattern layer; a liner/barrier layer formed on at least a portion of a lateral surface and a lower surface of the copper pattern layer; a dielectric layer formed so as to come into contact with at least a portion of an outer surface of the liner/barrier layer; and a capping layer formed on an exposed surface of the copper pattern layer, wherein the capping layer is graphene having a functional group on a surface thereof.

2 . The copper interconnect device of claim 1 , wherein the capping layer is formed on the liner/barrier layer.

3 . The copper interconnect device of claim 1 , wherein the capping layer is formed on the dielectric layer.

4 . The copper interconnect device of claim 1 , wherein the capping layer is a graphene monolayer or multilayer having a functional group on a surface thereof, or is configured such that surface-functionalized graphene flakes are stacked.

5 . The copper interconnect device of claim 1 , wherein the functional group is a single functional group or a combination of two or more functional groups.

6 . A method of fabricating a copper interconnection device, comprising:
surface-functionalizing graphene; forming a copper interconnection structure; applying the surface-functionalized graphene on the copper interconnection structure; and performing thermal treatment, wherein surface-functionalizing the graphene is forming a functional group on a surface of the graphene.

7 . The method of claim 6 , wherein surface-functionalizing the graphene comprises forming a functional group on the surface of the graphene using at least one of inducing a chemical reaction on a surface of the graphene using a chemical, adsorbing a polymer on a surface of the graphene, and polymerizing a monomer on a surface of the graphene, and performing plasma treatment on a surface of the graphene.

8 . The method of claim 6 , wherein applying the surface-functionalized graphene comprises at least one of spin coating, spray coating or dip coating using a coating solution including the surface-functionalized graphene, and transferring a surface-functionalized graphene layer.

9 . The method of claim 6 , wherein applying the surface-functionalized graphene comprises selectively forming graphene on a portion of the copper interconnection structure.

10 . The method of claim 9 , wherein selectively forming the graphene on the portion of the copper interconnection structure comprises:
applying a self-assembly monolayer material on the copper interconnection structure; applying the surface-functionalized graphene; and removing the self-assembly monolayer material.

Assignees

• Lam Res Corp

Inventors

• Cho Byung Jin
• Yoon Seong Jun
• Yoon Hyungsuk Alexander

Classifications

• H10P76/403

  for lift-off processes · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/039

  also covering sidewalls of the conductive structures · CPC title

• H10W20/037

  the barrier, adhesion or liner layers being on top of a main fill metal · CPC title

• H10W20/077

  on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title