Film forming method, film forming apparatus, and storage medium

Patent metadata

Field	Value
Publication number	US-2016265136-A1
Application number	US-201615057563-A
Country	US
Kind code	A1
Filing date	Mar 1, 2016
Priority date	Mar 9, 2015
Publication date	Sep 15, 2016
Grant date	—

Abstract

A film forming method for forming an aluminum nitride film on a substrate in which at least a surface portion is formed of a single crystal silicon through an epitaxial growth under a vacuum atmosphere, includes performing one or more times a cycle including a first process of supplying a raw material gas containing an aluminum compound to the substrate and a second process of supplying an ammonia gas to form a seed layer formed of an aluminum nitride by a reaction of the ammonia gas and the aluminum compound adsorbed onto the silicon substrate, and simultaneously supplying the raw material gas containing the aluminum compound and the ammonia gas to form an aluminum nitride film on the seed layer.

First claim

What is claimed is:

1 . A film forming method for forming an aluminum nitride film on a substrate in which at least a surface portion is formed of a single crystal silicon through an epitaxial growth under a vacuum atmosphere, comprising:
performing one or more times a cycle including a first process of supplying a raw material gas containing an aluminum compound to the substrate and a second process of supplying an ammonia gas to form a seed layer formed of an aluminum nitride by a reaction of the ammonia gas and the aluminum compound adsorbed onto the silicon substrate; and simultaneously supplying the raw material gas containing the aluminum compound and the ammonia gas to form an aluminum nitride film on the seed layer.

2 . The method of claim 1 , wherein purging an atmosphere under which the substrate is processed with a purge gas is performed between the first process and the second process.

3 . The method of claim 1 , wherein the raw material gas is an aluminum halide, and
wherein the method comprises, before starting the cycle, forming a protective film formed of a silicon nitride film having a film thickness of 4 nm or less on a surface of the substrate by supplying the ammonia gas to the substrate.

4 . The method of claim 3 , wherein the forming the protective film is performed at a process pressure of 1000 Pa or less.

5 . The method of claim 4 , wherein, in the forming the protective film, when a film thickness that is available, 5 minutes before the forming the protective film is stopped, is d 1 and a film thickness that is available when the forming the protective film is stopped is d 2 , a value of {(d 2 −d 1 )/d 1 }×100%, which is an increase rate of the film thickness, is 3% or less, when viewed in a relationship between the film thickness and a film formation time of the silicon nitride film.

6 . A non-transitory computer readable storage medium storing a computer program to be used in a film forming apparatus having a process vessel in which a substrate is disposed and in which a vacuum atmosphere is formed,
wherein the computer program is prepared to execute the film forming method of claim 1 .

7 . A film forming apparatus for forming an aluminum nitride film on a substrate in which at least a surface portion is formed of a single crystal silicon through an epitaxial growth, comprising:
a process vessel configured to form a vacuum atmosphere; a mounting table installed to mount the substrate within the process vessel; a heating part configured to heat the substrate mounted on the mounting table; and a control part configured to output a control signal such that a step of performing one or more times a cycle including a first process of supplying a raw material gas containing an aluminum compound to the substrate mounted on the mounting table and a second process of supplying an ammonia gas to form a seed layer formed of an aluminum nitride by a reaction of the ammonia gas and the aluminum compound adsorbed onto the silicon substrate; and a step of simultaneously supplying the raw material gas containing the aluminum compound and the ammonia gas to form an aluminum nitride film on the seed layer, are performed.

8 . The apparatus of claim 7 , wherein the raw material gas is an aluminum halide, and
wherein the control part is configured to output the control signal such that, before starting the cycle, a silicon nitride film having a film thickness of 4 nm is formed on a surface of the substrate by setting a process pressure to be 1000 Pa or less and supplying the ammonia gas to the substrate.

Assignees

• Tokyo Electron Ltd

Inventors

• Umezawa Kota
• Watanabe Yosuke

Classifications

• C30B29/403 Primary

  AIII-nitrides · CPC title

• C30B25/183

  being provided with a buffer layer, e.g. a lattice matching layer · CPC title

• C30B25/186

  being specially pre-treated by, e.g. chemical or physical means · CPC title

• C30B29/06

  Silicon · CPC title

• C30B25/10

  Heating of the reaction chamber or the substrate · CPC title