Dynamic hvpe of compositionally graded buffer layers
US-2024084479-A1 · Mar 14, 2024 · US
being provided with a buffer layer, e.g. a lattice matching layer
being provided with a buffer layer, e.g. a lattice matching layer · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B25/183 |
| Official title | {being provided with a buffer layer, e.g. a lattice matching layer} |
| Display label | being provided with a buffer layer, e.g. a lattice matching layer |
| Total patents | 637 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 65 |
| 2016 | 50 |
| 2017 | 50 |
| 2018 | 74 |
| 2019 | 66 |
| 2020 | 52 |
| 2021 | 51 |
| 2022 | 47 |
| 2023 | 61 |
| 2024 | 59 |
| 2025 | 49 |
| 2026 | 13 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion
US-2015345036-A1 · Dec 3, 2015 · US
Base material for growing single crystal diamond and method for producing single crystal diamond substrate
US-9200379-B2 · Dec 1, 2015 · US
Iii nitride epitaxial substrate and method of producing the same
US-2015340230-A1 · Nov 26, 2015 · US
Nitride semiconductor substrate
US-9194055-B2 · Nov 24, 2015 · US
Semiconductor substrate, method of manufacturing semiconductor substrate, and semiconductor device
US-2015332914-A1 · Nov 19, 2015 · US
Substrate for epitaxial growth, manufacturing method therefor, and substrate for superconducting wire
US-2015299899-A1 · Oct 22, 2015 · US
Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US-2015295041-A1 · Oct 15, 2015 · US
III-Nitride Based Semiconductor Structure
US-2015287792-A1 · Oct 8, 2015 · US
Semiconductor stacked body, method for manufacturing same, and semiconductor element
US-9153648-B2 · Oct 6, 2015 · US
Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
US-2015279672-A1 · Oct 1, 2015 · US
Controlling gaasp/sige interfaces
US-2015255549-A1 · Sep 10, 2015 · US
Epitaxial wafer, photodiode, optical sensor device, and methods for producing epitaxial wafer and photodiode
US-9129808-B2 · Sep 8, 2015 · US
Low-temperature selective epitaxial growth of silicon for device integration
US-2015247259-A1 · Sep 3, 2015 · US
Vapor phase growth method
US-2015233017-A1 · Aug 20, 2015 · US
Method of Growing Gallium Nitride-Based Crystal and Heat Treatment Apparatus
US-2015221512-A1 · Aug 6, 2015 · US
Epitaxial wafer and method for producing same
US-2015221502-A1 · Aug 6, 2015 · US
Pre-cleaning method and preparation method of low-temperature polysilicon thin film, liquid crystal display device, and manufacturing system thereof
US-2015214036-A1 · Jul 30, 2015 · US
Epitaxial substrate comprising a superlattice group and method for manufacturing the epitaxial substrate
US-9090993-B2 · Jul 28, 2015 · US
Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method
US-9093271-B2 · Jul 28, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B25/183?
- CPC C30B25/183 is the Cooperative Patent Classification code for “being provided with a buffer layer, e.g. a lattice matching layer.”
- How many patents are filed under CPC C30B25/183 (being provided with a buffer layer, e.g. a lattice matching layer)?
- Our database includes 637 publications tagged with this CPC code.
- Is patent activity under CPC C30B25/183 growing?
- Publication counts under this code: 59 in 2024 vs 49 in 2025 (latest complete years).