East china university of science and technology

US2016265103A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016265103-A1
Application numberUS-201315030580-A
CountryUS
Kind codeA1
Filing dateOct 31, 2013
Priority dateOct 31, 2013
Publication dateSep 15, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

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Methods described herein generally relate to producing patterned graphene. The method may include irradiating at least one focal point on a surface of a metal substrate with a laser beam in the presence of carbon dioxide, wherein the laser beam is generated by an ultra-short pulse laser; and causing the laser beam to move relative to the surface of the metal substrate such that the at least one focal point is displaced along a pattern on the surface, thereby producing a patterned graphene. Apparatuses for producing patterned graphene are also disclosed.

First claim

Opening claim text (preview).

1 . A method for producing a patterned graphene, the method comprising: irradiating at least one focal point on a surface of a metal substrate with a laser beam in the presence of carbon dioxide, wherein the laser beam is generated by an ultra-short pulse laser; and causing the laser beam to move relative to the surface of the metal substrate such that the at least one focal point is displaced along a pattern on the surface, thereby producing the patterned graphene. 2 . The method of claim 1 , further comprising isolating the patterned graphene. 3 . The method of claim 1 , wherein the laser beam passes through an optical component prior to irradiating the focal point. 4 . The method of claim 3 , wherein the optical component comprises an optical lens. 5 . The method of claim 1 , wherein the ultra-short pulse laser comprises an attosecond laser, a femtosecond laser, an excimer laser, or a nano-laser. 6 . The method of claim 1 , wherein causing the laser beam to move relative to the surface of the metal substrate comprises moving the laser beam. 7 . The method of claim 1 , wherein causing the laser beam to move relative to the surface of the metal substrate comprises moving the metal substrate. 8 . The method of claim 1 , wherein causing the laser beam to move relative to the surface of the metal substrate comprises controlling the relative movement by a computer. 9 . The method of claim 1 , wherein the ultra-short pulse laser operates at a power of about 0.5 mW/pulse to about 100 mW/pulse. 10 . The method of claim 1 , wherein the ultra-short pulse laser operates at a wavelength of about 100 nm to about 1000 nm. 11 . The method of claim 1 , wherein the laser beam moves relative to the metal substrate at a scanning speed of about 0.005 mm/s to about 10 mm/s. 12 . The method of claim 1 , wherein the metal substrate comprises zinc, aluminum, magnesium, or a combination thereof. 13 . The method of claim 1 , wherein the carbon dioxide is solid carbon dioxide, gaseous carbon dioxide, or both. 14 . An apparatus for producing a patterned graphene, the apparatus comprising: an ultra-short pulse laser configured to produce a laser beam; and a housing configured to accommodate a metal substrate and carbon dioxide, wherein the housing comprises an optical port configured to allow irradiation of at least one focal point on a surface of the metal substrate by the laser beam. 15 . The apparatus of claim 14 , wherein the ultra-short pulse laser comprises an attosecond laser, a femtosecond laser, an excimer laser, or a nano-laser. 16 . The apparatus of claim 14 , further comprising a lens positioned between the ultra-short pulse laser and the metal substrate. 17 . The apparatus of claim 14 , further comprising a support structure that secures the laser relative to the housing. 18 . The apparatus of claim 17 , wherein the support is configured to allow movement of the laser beam relative to the metal substrate in the housing. 19 . The apparatus of claim 14 , further comprising a computer coupled to the ultra-short pulse laser and configured to control the ultra-short pulse laser. 20 - 21 . (canceled) 22 . The apparatus of claim 14 , wherein the carbon dioxide is at least one of solid carbon dioxide or gaseous carbon dioxide.

Assignees

Inventors

Classifications

  • Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc. · CPC title

  • using lasers · CPC title

  • Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

  • Manufacture or treatment of nanostructures · CPC title

  • by chemical vapour deposition [CVD] · CPC title

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What does patent US2016265103A1 cover?
Methods described herein generally relate to producing patterned graphene. The method may include irradiating at least one focal point on a surface of a metal substrate with a laser beam in the presence of carbon dioxide, wherein the laser beam is generated by an ultra-short pulse laser; and causing the laser beam to move relative to the surface of the metal substrate such that the at least one…
Who is the assignee on this patent?
Univ East China Science & Tech
What technology area does this patent fall under?
Primary CPC classification C23C14/5813. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Sep 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).