Substrate processing method, and substrate processing device

Patent metadata

Field	Value
Publication number	US-2016247698-A1
Application number	US-201415028243-A
Country	US
Kind code	A1
Filing date	Oct 8, 2014
Priority date	Oct 10, 2013
Publication date	Aug 25, 2016
Grant date	—

Abstract

This substrate processing method includes supplying a chemical liquid to an upper surface of a substrate and rinsing away the chemical liquid adhering to the upper surface of the substrate by holding a puddled rinse liquid on the substrate while maintaining a rotation speed of the substrate at a zero or low speed, and a chemical liquid puddle step of holding a liquid film of a puddled chemical liquid on the upper surface of the substrate while maintaining the rotation speed of the substrate at a zero or low speed, and the rinsing step is performed subsequent to finishing the chemical liquid puddle step, and the rinsing step includes supplying a rinse liquid to the upper surface of the substrate and then replacing the liquid film of the chemical liquid held on the upper surface of the substrate with the rinse liquid.

First claim

1 . A substrate processing method comprising:
a chemical liquid step of supplying a chemical liquid to an upper surface of a substrate held by a substrate holding unit in a horizontal posture; and a puddle rinse step of rinsing away the chemical liquid adhering to the upper surface of the substrate by holding a liquid film of a puddled rinse liquid on the upper surface of the substrate while maintaining a rotation speed of the substrate at a zero speed or at a low speed; the chemical liquid step including a chemical liquid puddle step of holding a liquid film of a puddled chemical liquid on the upper surface of the substrate while maintaining the rotation speed of the substrate at a zero speed or at a low speed, the puddle rinse step being performed subsequent to a finish of the chemical liquid puddle step; the puddle rinse step including a step of supplying a rinse liquid to the upper surface of the substrate and then replacing the liquid film of the chemical liquid held on the upper surface of the substrate with the rinse liquid.

2 . The substrate processing method according to claim 1 , wherein the chemical liquid is an etching liquid.

3 . The substrate processing method according to claim 1 , wherein the upper surface of the substrate that has not yet undergone the puddle rinse step exhibits hydrophobic properties.

4 . The substrate processing method according to claim 1 , wherein the chemical liquid puddle step is performed throughout an entire period of time of the chemical liquid step.

5 . The substrate processing method according to claim 1 , further comprising a pre-supply step of supplying water to the upper surface of the substrate and holding a liquid film of water on the upper surface prior to performing the chemical liquid puddle step,
the chemical liquid puddle step including a step of supplying a chemical liquid to the upper surface of the substrate and then replacing the liquid film of water held on the upper surface of the substrate with the chemical liquid.

6 . The substrate processing method according to claim 5 , further comprising a low surface tension liquid replacing step of, after finishing the puddle rinse step, supplying a low surface tension liquid whose surface tension is lower than the rinse liquid to the upper surface of the substrate and then replacing a liquid film of a puddled rinse liquid held on the upper surface of the substrate with the low surface tension liquid.

7 . The substrate processing method according to claim 1 , further comprising a chemical liquid supply position moving step of moving a supply position of the chemical liquid in the upper surface of the substrate in the chemical liquid puddle step.

8 . The substrate processing method according to claim 1 , further comprising a rinse liquid supply position moving step of moving a supply position of the rinse liquid in the upper surface of the substrate in the puddle rinse step.

9 . A substrate processing apparatus comprising:
a substrate holding unit that holds a substrate in a horizontal posture; a substrate rotating unit that rotates the substrate around a vertical rotational axis; a chemical liquid supply unit that supplies a chemical liquid to a front surface of the substrate; a rinse liquid supply unit that supplies a rinse liquid to the front surface of the substrate; and a control unit that performs: a chemical liquid puddle step of supplying a chemical liquid to an upper surface of the substrate and holding a liquid film of a puddled chemical liquid on the upper surface of the substrate while controlling the substrate rotating unit, the chemical liquid supply unit, and the rinse liquid supply unit and while maintaining a rotation speed of the substrate at a zero speed or at a low speed; a puddle rinse step of, subsequent to a finish of the chemical liquid puddle step, rinsing away the chemical liquid adhering to the upper surface of the substrate by holding the liquid film of the puddled rinse liquid on the upper surface of the substrate while maintaining a rotation speed of the substrate at a zero speed or at a low speed; and a step of, in the puddle rinse step, supplying a rinse liquid to the upper surface of the substrate and then replacing the liquid film of the chemical liquid held on the upper surface of the substrate with the rinse liquid.

Assignees

• Screen Holdings Co Ltd

Inventors

• Yoshizumi Asuka
• Higuchi Ayumi

Classifications

• H10P72/7604

  the wafers being placed on a susceptor, stage or support · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0411

  for wet cleaning or washing · CPC title

• H10P72/0406 Primary

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P70/15 Primary

  by wet cleaning only (H10P70/52 takes precedence) · CPC title