Non-amine post-cmp composition and method of use

Patent metadata

Field	Value
Publication number	US-2016237385-A1
Application number	US-201615137552-A
Country	US
Kind code	A1
Filing date	Apr 25, 2016
Priority date	Feb 27, 2009
Publication date	Aug 18, 2016
Grant date	—

Abstract

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

First claim

1 . A cleaning composition comprising a concentrate and a diluting solvent, wherein the concentrate comprises at least one basic salt, at least one organic solvent, at least one complexing agent, and water, wherein the ratio of concentrate to diluting solvent is in a range from about 10:1 to about 1000:1, and wherein the cleaning composition is substantially devoid of amine and ammonium-containing salts.

2 . The cleaning composition of claim 1 , wherein the at least one basic salt comprises a species selected from the group consisting of cesium hydroxide, rubidium hydroxide, potassium hydroxide, and combinations thereof.

3 . The cleaning composition of claim 1 , wherein the at least one basic salt comprises cesium hydroxide or potassium hydroxide.

4 . The cleaning composition of claim 1 , wherein the amount of components in the concentrate is as follows: about 0.1:1 to about 10:1 basic salt to complexing agent and about 0.1:1 to about 25:1 organic solvent to complexing agent.

5 . The cleaning composition of claim 1 , wherein the at least one organic solvent comprises a glycol, a sulfone, or a combination thereof.

6 . The cleaning composition of claim 1 , wherein the at least one organic solvent comprises a species selected from the group consisting of ethylene glycol, propylene glycol, neopentyl glycol, glycerine, diethylene glycol, dipropylene glycol, 1,4-butanediol, 2,3-butylene glycol, 1,3-pentanediol, 1,4-pentanediol, 1,5-pentanediol, tetramethylene sulfone (sulfolane), dimethyl sulfone, diethyl sulfone, bis(2-hydroxyethyl) sulfone, methyl sulfolane, ethyl sulfolane, and combinations thereof.

7 . The cleaning composition of claim 1 , wherein the at least one organic solvent comprises a species selected from the group consisting of ethylene glycol, propylene glycol, glycerine, and combinations thereof.

8 . The cleaning composition of claim 1 , wherein the at least one complexing agent comprises a species selected from the group consisting of ethylenediaminetetraacetic acid (EDTA), 1,2-cyclohexanediamine-N,N,N′,N′-tetraacetic acid (CDTA), glycine, ascorbic acid, iminodiacetic acid (IDA), nitrilotriacetic acid, alanine, arginine, asparagine, aspartic acid, cysteine, glutamic acid, glutamine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, valine, gallic acid, boric acid, acetic acid, acetone oxime, acrylic acid, adipic acid, betaine, dimethyl glyoxime, formic acid, fumaric acid, gluconic acid, glutaric acid, glyceric acid, glycolic acid, glyoxylic acid, isophthalic acid, itaconic acid, lactic acid, maleic acid, maleic anhydride, malic acid, malonic acid, mandelic acid, 2,4-pentanedione, phenylacetic acid, phthalic acid, proline, propionic acid, pyrocatecol, pyromellitic acid, quinic acid, sorbitol, succinic acid, tartaric acid, terephthalic acid, trimellitic acid, trimesic acid, tyrosine, xylitol, salts and derivatives thereof, and combinations thereof.

9 . The cleaning composition of claim 1 , wherein the at least one complexing agent comprises iminodiacetic acid (IDA), gallic acid, boric acid, or combinations thereof.

10 . The cleaning compositions of claim 1 , wherein the compositions are substantially devoid of oxidizing agents; fluoride-containing sources; abrasive materials; alkaline earth metal bases; cross-linked organic polymer particles; and combinations thereof.

11 . The cleaning compositions of claim 1 , wherein the concentrate is selected from the group consisting of: (a) cesium hydroxide, glycerine, iminodiacetic acid and water, (b) cesium hydroxide, glycerine, boric acid and water, (c) cesium hydroxide, propylene glycol, gallic acid and water, (d) cesium hydroxide, ethylene glycol, iminodiacetic acid and water, and (e) cesium hydroxide, propylene glycol, boric acid, and water.

12 . The cleaning composition of claim 1 , further comprising residue and contaminants, wherein the residue comprises post-CMP residue, post-etch residue, post-ash residue, or combinations thereof.

13 . The cleaning composition of claim 1 , wherein the diluting solvent comprises water.

14 . The cleaning composition of claim 1 , wherein the cleaning compositions do not solidify to form a polymeric solid.

15 . The cleaning composition of claim 1 , wherein the concentrate further comprises at least one surfactant.

16 . (canceled)

17 . A method of removing residue and contaminants from a microelectronic device having said residue and contaminants thereon, said method comprising contacting the microelectronic device with a cleaning composition for sufficient time to at least partially clean said residue and contaminants from the microelectronic device, wherein the cleaning composition includes a concentrate and a diluting solvent, wherein the concentrate comprises at least one basic salt, at least one organic solvent, at least one complexing agent, optionally at least one surfactant, and water, wherein the ratio of concentrate to diluting solvent is in a range from about 10:1 to about 1000:1, and wherein the cleaning composition is substantially devoid of amine and ammonium-containing salts.

18 . The method of claim 17 , wherein the residue comprises post-CMP residue, post-etch residue, post-ash residue, or combinations thereof.

19 . The method of claim 17 , wherein said contacting comprises conditions selected from the group consisting of: time of from about 15 seconds to about 5 minutes; temperature in a range of from about 20° C. to about 50° C.; and combinations thereof.

20 . The method of claim 17 , wherein the diluting solvent comprises water.

21 . The method of claim 17 , wherein the amount of components in the concentrate is as follows: wherein the amount of components in the concentrate is as follows: about 0.1:1 to about 10:1 basic salt to complexing agent and about 0.1:1 to about 25:1 organic solvent to complexing agent.

Assignees

• Advanced Tech Materials

Inventors

• Barnes Jeffrey A
• Liu Jun
• Zhang Peng

Classifications

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P70/237

  the processing being a planarisation of insulating layers · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• B08B3/10

  with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration · CPC title