Apparatus and method for processing a substrate

Patent metadata

Field	Value
Publication number	US-2016233129-A1
Application number	US-201615015061-A
Country	US
Kind code	A1
Filing date	Feb 3, 2016
Priority date	Feb 6, 2015
Publication date	Aug 11, 2016
Grant date	—

Abstract

A method of processing a substrate is disclosed. The method includes the following steps: providing a substrate body having a surface; placing a die on the surface, wherein the die acts as a catalyst; immersing the substrate body and the die in a reaction solution; and processing the substrate body via a chemical reaction occurring on the surface through the reaction solution and the catalyst.

First claim

What is claimed is:

1 . A method of processing a substrate, comprising steps of:
providing a substrate body having a surface; placing a die on the surface, wherein the die acts as a catalyst; immersing the substrate body and the die in a reaction solution; and processing the substrate body via a chemical reaction occurring on the surface through the reaction solution and the catalyst.

2 . The method according to claim 1 , further comprising steps of:
disposing a counter electrode in opposite to the die in the reaction solution; and providing an electric power to the die and the counter electrode.

3 . The method according to claim 2 , further comprising a step of:
when the die acts as an anode, applying one of a constant voltage and a constant current to the die to accelerate the chemical reaction.

4 . The method according to claim 2 , further comprising a step of:
when the die acts as a cathode, applying one of a constant voltage and a constant current to the die to prevent the die from corrosion.

5 . The method according to claim 1 , wherein the reaction solution includes an etching solution being one selected from a group consisting of a hydrofluoric acid, a sulfuric acid, a hydrochloric acid, a nitric acid and a combination thereof.

6 . The method according to claim 1 , wherein the reaction solution includes an oxidant being one of a hydrogen peroxide and an ozone.

7 . The method according to claim 1 , wherein the reaction solution includes an etching accelerator being one selected from a group consisting of a glycine, a lysine, a copper sulfate, a copper nitrate, a copper chloride and a combination thereof.

8 . The method according to claim 1 , wherein the die is one object selected from the group consisting of one-dimensional, two-dimensional and three-dimensional objects.

9 . The method according to claim 1 , wherein the die has a surface being a metal selected from a group consisting of a silver, a platinum, a copper, an iridium, a palladium, a gold, a stainless steel and a combination thereof.

10 . The method according to claim 1 , wherein the substrate body includes a material being one selected from a group consisting of a silicon, a sapphire, a silicon carbide and a gallium nitride.

11 . The method according to claim 1 , wherein the processing step includes one of the following steps:
forming a pattern on the surface of the substrate body; and performing a cutting to the substrate body.

12 . An apparatus for cutting a silicon ingot, comprising:
a main body containing a reaction solution and the silicon ingot, wherein the silicon ingot includes at least two adjacent cutting peripheries, and the at least two adjacent cutting peripheries define therebetween a silicon wafer; and a cutting catalyst element disposed inside the main body, and contacting one of the at least two adjacent cutting peripheries to cut the silicon ingot.

13 . The apparatus according to claim 12 , wherein the cutting catalyst element includes a metal wire acting as a catalyst and being one selected from a group consisting of a silver, a platinum, a copper, an iridium, a palladium, a gold, a stainless steel and a combination thereof.

14 . The apparatus according to claim 12 , wherein the reaction solution includes an etching solution being one selected from a group consisting of a hydrofluoric acid, a sulfuric acid, a hydrochloric acid, a nitric acid and a combination thereof.

15 . The apparatus according to claim 12 , wherein the reaction solution includes an oxidant being one of a hydrogen peroxide and an ozone.

16 . The apparatus according to claim 13 , further comprising:
a pressure source providing a pressure upon the silicon ingot; and an etching solution cutting the silicon ingot by using the metal wire.

17 . The apparatus according to claim 12 , further comprising a counter electrode in opposite to the cutting catalyst element and disposed inside the main body.

18 . A method of forming a pattern on a non-conductive substrate, comprising steps of:
providing a substrate body having a surface; and forming the pattern on the surface via a catalytic reaction.

19 . The method according to claim 18 , further comprising a step of providing an etching solution and a metal die, wherein:
the catalytic reaction occurs at a contact surface where the metal die contacts the surface of the body; the substrate body acts as a reactant; the metal die acts as a catalyst; and when the contact surface proceeds with the catalytic reaction, the pattern is formed on the contact surface.

20 . The method according to claim 19 , further comprising steps of:
disposing a counter electrode in opposite to the metal die in the etching solution; and providing an electric power to the metal die and the counter electrode.

Assignees

• Univ Nat Taiwan Science Tech

Inventors

• Hwang Bing-Joe
• Su Wei-Nien
• Jeng Jeng-Ywan
• Chu Yuan-Han
• Chiu Tse-Ming
• Teng Hsin-Fu

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10P50/613

  of Group IV materials · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P50/617

  of Group III-V materials · CPC title