Structure manufacturing method and intermediate structure
US-11393693-B2 · Jul 19, 2022 · US
of Group III-V materials
of Group III-V materials · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P50/617 |
| Official title | {of Group III-V materials} |
| Display label | of Group III-V materials |
| Total patents | 101 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 8 |
| 2016 | 6 |
| 2017 | 9 |
| 2018 | 6 |
| 2019 | 10 |
| 2020 | 10 |
| 2021 | 10 |
| 2022 | 17 |
| 2023 | 12 |
| 2024 | 6 |
| 2025 | 6 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of manufacture using complementary conductivity-selective wet-etching techniques for III-nitride materials and devices
US-11195722-B2 · Dec 7, 2021 · US
Structure manufacturing method and structure manufacturing device
US-2021351030-A1 · Nov 11, 2021 · US
Structure manufacturing method, structure manufacturing apparatus and intermediate structure
US-2021313186-A1 · Oct 7, 2021 · US
Semiconductor fabrication with electrochemical apparatus
US-11101149-B2 · Aug 24, 2021 · US
Method for producing patterns in a substrate
US-11049724-B2 · Jun 29, 2021 · US
Substrate processing apparatus, substrate processing method, and substrate processing system
US-2021187685-A1 · Jun 24, 2021 · US
Process for manufacturing a relaxed gan/ingan structure
US-2021193870-A1 · Jun 24, 2021 · US
Method for GaN vertical microcavity surface emitting laser (VCSEL)
US-11043792-B2 · Jun 22, 2021 · US
Method for electrochemically etching a semiconductor structure
US-2021057601-A1 · Feb 25, 2021 · US
Group III nitride semiconductor and method for producing same
US-10923346-B2 · Feb 16, 2021 · US
Method of Manufacture Using Complementary Conductivity-Selective Wet-Etching Techniques for III-Nitride Materials and Devices
US-2020381260-A1 · Dec 3, 2020 · US
Etching device
US-2020365410-A1 · Nov 19, 2020 · US
Semiconductor fabrication with electrochemical apparatus
US-2020350185-A1 · Nov 5, 2020 · US
Semiconductor fabrication with electrochemical apparatus
US-10720344-B2 · Jul 21, 2020 · US
Method for porosifying a material and semiconductor structure
US-2020227255-A1 · Jul 16, 2020 · US
GaN material and method of manufacturing semiconductor device
US-10665683-B2 · May 26, 2020 · US
Group iii nitride semiconductor and method for producing same
US-2020135447-A1 · Apr 30, 2020 · US
Method for producing patterns in a substrate
US-2020090941-A1 · Mar 19, 2020 · US
Semiconductor fabrication with electrochemical apparatus
US-2020066554-A1 · Feb 27, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P50/617?
- CPC H10P50/617 is the Cooperative Patent Classification code for “of Group III-V materials.”
- How many patents are filed under CPC H10P50/617 (of Group III-V materials)?
- Our database includes 101 publications tagged with this CPC code.
- Is patent activity under CPC H10P50/617 growing?
- Publication counts under this code: 6 in 2024 vs 6 in 2025 (latest complete years).