Substrate Etch

Patent metadata

Field	Value
Publication number	US-2016208394-A1
Application number	US-201314913771-A
Country	US
Kind code	A1
Filing date	Aug 30, 2013
Priority date	Aug 30, 2013
Publication date	Jul 21, 2016
Grant date	—

Abstract

An example provides a method including providing a substrate including an area having a plurality of pores and etching the area of the substrate to remove the plurality of pores to form a recess in the substrate. In some examples, the recess may form, at least in part, a device.

First claim

What is claimed is:

1 . A method comprising:
arranging a mask with a plurality of openings on a surface of a substrate: depositing metal on the surface of the substrate through the plurality of openings to form a metal layer; etching the substrate using a solution that reacts with the metal layer to form a plurality of pores in the substrate; and etching the substrate to remove the plurality of pores to form a recess in the substrate.

2 . The method of claim 1 , wherein the metal layer is a discontinuous metal layer.

3 . The method of claim 1 , wherein the mask is a silicon carbide hard mask.

4 . The method of claim 1 , further comprising removing the mask after said depositing the metal.

5 . The method of claim 5 , wherein said removing is performed prior to said etching the substrate using the solution.

6 . The method of claim 1 , wherein the metal layer comprises a metal selected from a group consisting of gold, silver, platinum, ruthenium, platinum, palladium, molybdenum, chromium, copper, tantalum, titanium, tungsten, and alloys thereof.

7 . The method of claim 1 , wherein the solution comprises hydrogen peroxide, hydrofluoric acid, and water.

8 . The method of claim 1 , wherein the recess comprises a trench, a blind hole, or a through-hole.

9 . The method of claim 1 , wherein the recess has a width greater than about 20 μm.

10 . The method of claim 1 , wherein the substrate comprises silicon.

11 . A method comprising:
forming a metal layer on a surface of a substrate by depositing metal on a substrate through a plurality of openings of a mask: etching the substrate using a solution that reacts with the metal layer to form a plurality of pores in the surface in the substrate; and etching the substrate to remove the plurality of pores to form a micro-electrical-mechanical-systems (MEMS) device.

12 . The method of claim 11 , further comprising forming a printhead with the MEMS device.

13 . The method of claim 11 , wherein the surface is a first surface, and wherein the method further comprises:
forming another metal layer on an area of a second surface, opposite the first surface, of the substrate by depositing metal on the substrate through a plurality of openings of another mask; etching the substrate using the solution to form another plurality of pores in the second surface in the substrate; and etching the substrate to remove the other plurality of pores to further form the MEMS device.

14 . A method comprising:
providing a substrate including an area having a plurality of pores; and etching the area of the substrate to remove the plurality of pores to form, at least in part, a printhead.

15 . The method of claim 14 , wherein said etching comprises bulk etching the substrate using tetra-methyl ammonium hydroxide or potassium hydroxide.

Assignees

• Hewlett Packard Development Co

Inventors

• Mckay Jr Roger A
• Sadik Patrick

Classifications

• C23F1/16 Primary

  Acidic compositions (C23F1/42 takes precedence) · CPC title

• B41J2/1631

  photolithography · CPC title

• B81C1/00119

  Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems · CPC title

• B41J2/1609 Primary

  of finger type, chamber walls consisting integrally of piezoelectric material · CPC title

• B41J2/1629

  wet etching · CPC title