Selective deposition of metal oxide
US-2024282572-A1 · Aug 22, 2024 · US
US2015275361A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015275361-A1 |
| Application number | US-201514619474-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 11, 2015 |
| Priority date | Mar 31, 2014 |
| Publication date | Oct 1, 2015 |
| Grant date | — |
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A method for conditioning a semiconductor chamber component may include passivating the chamber component with an oxidizer. The method may also include performing a number of chamber process operation cycles in a semiconductor processing chamber housing the chamber component until the process is stabilized. The number of chamber operation cycles to stabilize the process may be less than 10% of the amount otherwise used with conventional techniques.
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1 . A method of conditioning a semiconductor chamber component, the method comprising: passivating the chamber component with an oxidizer; and performing a number of chamber process operation cycles in a semiconductor processing chamber housing the chamber component until the process is stabilized, wherein the number of chamber operation cycles to stabilize the process is less than 3,000. 2 . The method of claim 1 , wherein the process is an etch process, and wherein…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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