Plate wave devices with wave confinement structures and fabrication methods

Patent metadata

Field	Value
Publication number	US-2016182009-A1
Application number	US-201514973336-A
Country	US
Kind code	A1
Filing date	Dec 17, 2015
Priority date	Dec 17, 2014
Publication date	Jun 23, 2016
Grant date	—

Abstract

A micro-electrical-mechanical system (MEMS) guided wave device includes a single crystal piezoelectric layer and at least one guided wave confinement structure configured to confine a laterally excited wave in the single crystal piezoelectric layer. A bonded interface is provided between the single crystal piezoelectric layer and at least one underlying layer. A multi-frequency device includes first and second groups of electrodes arranged on or in different thickness regions of a single crystal piezoelectric layer, with at least one guided wave confinement structure. Segments of a segmented piezoelectric layer and a segmented layer of electrodes are substantially registered in a device including at least one guided wave confinement structure.

First claim

What is claimed is:

1 . A micro-electrical-mechanical system (MEMS) guided wave device comprising:
a single crystal piezoelectric layer; a plurality of electrodes arranged in or on the single crystal piezoelectric layer and configured for transduction of a lateral acoustic wave in the single crystal piezoelectric layer; at least one slow wave propagation layer; and at least one guided wave confinement structure arranged proximate to the single crystal piezoelectric layer and configured to confine a laterally excited wave in the single crystal piezoelectric layer; wherein the at least one guided wave confinement structure comprises a Bragg mirror, and wherein the Bragg mirror is separated from the single crystal piezoelectric layer by a slow wave propagation layer of the at least one slow wave propagation layer.

2 . The MEMS guided wave device of claim 1 , wherein the Bragg mirror includes at least one group of at least one low impedance layer and at least one high impedance layer, and the at least one low impedance layer is sequentially arranged with the at least one high impedance layer in the at least one group.

3 . The MEMS guided wave device of claim 1 , comprising a bonded interface between the single crystal piezoelectric layer and at least one underlying layer of the device.

4 . The MEMS guided wave device of claim 1 , wherein:
the single crystal piezoelectric layer comprises a first surface and a second surface opposing the first surface; and the at least one guided wave confinement structure comprises a first guided wave confinement structure proximate to the first surface, and comprises a second guided wave confinement structure proximate to the second surface.

5 . The MEMS guided wave device of claim 4 , wherein the first guided wave confinement structure comprises a first Bragg mirror, and the second guided wave confinement structure comprises a second Bragg mirror.

6 . The MEMS guided wave device of claim 4 , wherein one of the first guided wave confinement structure or the second guided wave confinement structure comprises the Bragg mirror, and the other of the first guided wave confinement structure or the second guided wave confinement structure comprises a fast wave propagation layer.

7 . The MEMS guided wave device of claim 4 , wherein the at least one slow wave propagation layer comprises a first slow wave propagation layer and a second slow wave propagation layer, wherein the first slow wave propagation layer is arranged between the first surface and the first guided wave confinement structure, and the second slow wave propagation layer is arranged between the second surface and the second guided wave confinement structure.

8 . The MEMS guided wave device of claim 1 , wherein the at least one slow wave propagation layer comprises a thickness that differs from a thickness of each layer of the at least one guided wave confinement structure.

9 . The MEMS guided wave device of claim 1 , wherein the plurality of electrodes includes multiple electrodes arranged in the at least one slow wave propagation layer and arranged in contact with the single crystal piezoelectric layer.

10 . The MEMS guided wave device of claim 1 , wherein:
the plurality of electrodes comprises an interdigital transducer (IDT) including a first group of electrodes of a first polarity and a second group of electrodes of a second polarity opposing the first polarity; the single crystal piezoelectric layer includes a plurality of recessed regions; and the second group of electrodes is arranged in the plurality of recessed regions, such that the second group of electrodes is non-coplanar with the first group of electrodes.

11 . The MEMS guided wave device of claim 1 , further comprising at least one functional layer at least partially covering the plurality of electrodes.

12 . The MEMS guided wave device of claim 1 , wherein the single crystal piezoelectric layer comprises a first surface and a second surface opposing the first surface, and the plurality of electrodes comprises a first interdigital transducer (IDT) arranged on the first surface and comprises a second interdigital transducer (IDT) arranged on the second surface.

13 . The MEMS guided wave device of claim 1 , wherein the plurality of electrodes comprises an interdigital transducer (IDT) at least partially embedded in the single crystal piezoelectric layer.

14 . The MEMS guided wave device of claim 1 , wherein:
the single crystal piezoelectric layer comprises a first surface and a second surface opposing the first surface; the plurality of electrodes and the single crystal piezoelectric layer in combination comprise a periodically poled transducer in which the single crystal piezoelectric layer comprises a plurality of laterally alternating regions of different polarity, and in which the plurality of electrodes comprises a first solid metal electrode arranged on the first surface and comprises a second solid metal electrode arranged on the second surface; and the at least one slow wave propagation layer is present between the periodically poled transducer and the at least one guided wave confinement structure.

15 . The MEMS guided wave device of claim 1 , wherein:
the plurality of electrodes comprises a segmented layer of first electrodes and comprises a substantially continuous layer of a second electrode; the single crystal piezoelectric layer comprises a segmented single crystal piezoelectric layer; and the segmented single crystal piezoelectric layer is arranged between the segmented layer of first electrodes and the substantially continuous layer of the second electrode, with segments of the segmented single crystal piezoelectric layer being substantially registered with segments of the segmented layer of first electrodes.

16 . The MEMS guided wave device of claim 1 , wherein:
the single crystal piezoelectric layer comprises a first thickness region and a second thickness region, wherein a thickness of the first thickness region differs from a thickness of the second thickness region; and the plurality of electrodes comprises a first plurality of electrodes arranged on or adjacent to the first thickness region and configured for transduction of a first lateral acoustic wave having a wavelength λ 1 in the first thickness region, and comprises a second plurality of electrodes arranged on or adjacent to the second thickness region and configured for transduction of a second lateral acoustic wave having a wavelength λ 2 in the second thickness region, wherein λ 2 differs from λ 1 .

17 . The MEMS guided wave device of claim 1 , further comprising a carrier substrate, wherein a guided wave confinement structure of the at least one guided wave confinement structure is arranged between the carrier substrate and the single crystal piezoelectric layer.

18 . A micro-electrical-mechanical system (MEMS) guided wave device comprising:
a segmented single crystal piezoelectric layer; a plurality of electrodes arranged in or on the segmented single crystal piezoelectric layer and configured for transduction of a lateral acoustic wave having a wavelength λ in the segmented single crystal piezoelectric layer, wherein the plurality of electrodes comprises a segmented layer of first electrodes; and at least one guided wave confinement structure arranged proximate to the segmented single crystal piezoelectric layer and configured to confine the lateral acoustic wave in the segmented single crystal piezoelectric layer; wherein segments of the segmented single crystal piezoe

Assignees

• Rf Micro Devices Inc

Inventors

• Bhattacharjee Kushal

Classifications

• H03H9/02275

  Comb electrodes · CPC title

• H03H9/02244 Primary

  of microelectro-mechanical resonators · CPC title

• H03H9/25

  Constructional features of resonators using surface acoustic waves {(devices for manipulating acoustic surface waves in general G10K11/36)} · CPC title

• H03H3/02

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title

• H03H2003/027

  the resonators or networks being of the microelectro-mechanical [MEMS] type · CPC title