Method for producing a sensor
US-9278854-B2 · Mar 8, 2016 · US
US9479138B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9479138-B2 |
| Application number | US-201314784351-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 24, 2013 |
| Priority date | May 24, 2013 |
| Publication date | Oct 25, 2016 |
| Grant date | Oct 25, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A microelectromechanical systems device package includes a MEMS device mounted in flip-chip technology on a substrate. A film of non-evaporable getter material is disposed between the substrate and the MEMS device. A cover structure encapsulates the MEMS device. This invention further provides a method for manufacturing the microelectromechanical systems device package.
Opening claim text (preview).
The invention claimed is: 1. A microelectromechanical systems (MEMS) device package, comprising: a substrate with a first substrate plane and a second substrate plane opposite the first substrate plane, a first and a second connector pad being arranged on the first substrate plane; a MEMS device with a first contact pad and a second contact pad arranged on a front side of the MEMS device, wherein the MEMS device is mounted in flip-chip technology on the first substrate plane, the front side facing the first substrate plane and the first and second contact pad being electrically interconnected with the first and second connector pad, thereby forming an interspace between MEMS device and first substrate plane; a film of a non-evaporable getter material disposed on the first substrate plane at least partially in the interspace; and a cover structure encapsulating the MEMS device by sealing to the first substrate plane and enclosing the MEMS device between the first substrate plane and the cover structure. 2. The MEMS device package of claim 1 , further comprising a third connector pad and a fourth connector pad arranged on the second substrate plane, the third connector pad being electrically interconnected with the first connector pad and the fourth connector pad being electrically interconnected with the second connector pad. 3. The MEMS device package of claim 1 , wherein the substrate comprises a ceramic layer. 4. The MEMS device package of claim 1 , wherein the substrate comprises a ceramic device with a stack of ceramic layers and an electrode layer arranged between the ceramic layers in the stack. 5. The MEMS device package of claim 1 , wherein the substrate further comprises a fifth connector pad and a sixth connector pad arranged on the first substrate plane, a seventh connector pad and an eighth connector pad arranged on the second substrate plane, the seventh connector pad being electrically interconnected with the fifth connector pad and the eighth connector pad being electrically interconnected with the sixth connector pad, and wherein the film of the non-evaporable getter material is electrically interconnected with the fifth and sixth connector pad. 6. The MEMS device package of claim 1 , wherein the cover structure is hermetically sealed to the first substrate plane. 7. The MEMS device package of claim 1 , wherein the cover structure comprises a first coating with a polymer film sealed to the first substrate plane in a first periphery area and enclosing the MEMS device between the first substrate plane and the polymer film. 8. The MEMS device package of claim 7 , wherein the cover structure comprises a further coating arranged over the polymer film and sealed to the first substrate plane in a second periphery area around the first periphery area and enclosing the MEMS device between the first substrate plane, the polymer film and the further coating. 9. The MEMS device package of claim 8 , wherein the further coating comprises a metallic coating, a silicon oxide coating, or a silicon nitride coating or combinations thereof. 10. The MEMS device package of claim 1 , wherein the non-evaporable getter material comprises Zr, V, Ti, or Fe, or combinations thereof. 11. The MEMS device package of claim 1 , wherein the MEMS device is a SAW device, a BAW resonator or a FBAR resonator. 12. A method for producing a microelectromechanical systems (MEMS) device package, the method comprising: providing a microelectromechanical systems device package comprising: a substrate with a first substrate plane and a second substrate plane opposite the first substrate plane, a first and a second connector pad being arranged on the first substrate plane; a MEMS device with a first contact pad and a second contact pad arranged on a front side of the MEMS device, wherein the MEMS device is mounted in flip-chip technology on the first substrate plane, the front side facing the first substrate plane and the first and second contact pad being electrically interconnected with the first and second connector pad, thereby forming an interspace between MEMS device and first substrate plane; a film of a non-evaporable getter material disposed on the first substrate plane at least partially in the interspace; and a cover structure encapsulating the MEMS device and enclosing the MEMS device between the first substrate plane and the cover structure; sealing the package; and activating the non-evaporable getter material. 13. The method of claim 12 , wherein providing the microelectromechanical systems device package comprises: providing the substrate and forming the film of the non-evaporable getter material on the first substrate plane. 14. The method of claim 13 , wherein forming the film comprises sputter deposition, physical vapor deposition, printing, dip-coating or spin-coating of the non-evaporable getter material. 15. The method of claim 13 , wherein forming the film comprises patterning the film of the non-evaporable getter material. 16. The method of claim 15 , wherein patterning the film comprises: arranging a masking layer on the first substrate plane, the masking layer having openings exposing the first substrate plane, and removing the masking layer after disposing the film of the non-evaporable getter material; or structuring the film of the non-evaporable getter material by etching the film of the non-evaporable getter material after the film is on the first substrate plane. 17. The method of claim 12 , wherein a vacuum is maintained when sealing the package or activating the non-evaporable getter material. 18. The method of claim 12 , wherein activating the non-evaporable getter material comprises heat-activating the film of the non-evaporable getter material at a temperature between 150° C. and 500° C. 19. The method of claim 18 , wherein the substrate further comprises a fifth connector pad and a sixth connector pad arranged on the first substrate plane, a seventh connector pad and an eighth connector pad arranged on the second substrate plane, the seventh connector pad being electrically interconnected with the fifth connector pad and the eighth connector pad being electrically interconnected with the sixth connector pad; wherein the film of the non-evaporable getter material is electrically interconnected with the fifth and sixth connector pad; and wherein heat-activating the film comprises applying an electrical current to the film of the non-evaporable getter material via the fifth, sixth, seventh, eighth connector pads. 20. A microelectromechanical systems device package, comprising: a substrate with a first substrate plane and a second substrate plane opposite the first substrate plane, a first connector pad, a second connector pad, a fifth connector pad and a sixth connector pad being arranged on the first substrate plane and a seventh connector pad and an eighth connector pad being arranged on the second substrate plane, the seventh connector pad being electrically interconnected with the fifth connector pad and the eighth connector pad being electrically interconnected with the sixth connector pad, wherein the substrate comprises a ceramic device with a stack of ceramic layers and an electrode layer arranged between the ceramic layers in the stack; a MEMS device with a first contact pad and a second contact pad arranged on a front side of the MEMS device, wherein the MEMS device is mounted in flip-chip technology on the first substrate plane, the front side facing the first substrate plane and the firs
Fan-out layouts · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters · CPC title
of microelectro-mechanical resonators · CPC title
using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.