Pattern verifying method

Patent metadata

Field	Value
Publication number	US-2016147140-A1
Application number	US-201514601250-A
Country	US
Kind code	A1
Filing date	Jan 21, 2015
Priority date	Nov 21, 2014
Publication date	May 26, 2016
Grant date	—

Abstract

The present invention provides a pattern verifying method. First, a target pattern is decomposed into a first pattern and a second pattern. A first OPC process is performed for the first pattern to form a first revised pattern, and a second OPC process is performed for the second pattern to form a second revised pattern. An inspection process is performed, wherein the inspection process comprises an after mask inspection (AMI) process, which comprises considering the target pattern, the first pattern and the second pattern.

First claim

What is claimed is:

1 . A pattern verifying method related to a double patterning technology (DPT) process, comprising:
decomposing the target pattern into a first pattern and a second pattern by using a computer system; performing a first optical proximity correction (OPC) process for the first pattern to obtain a first revised pattern, and performing a second OPC process for the second pattern to obtain a second revised pattern; and performing an inspection process, wherein the inspection process comprises an after mask inspection (AMI) process, which comprises considering the target pattern, the first pattern and the second pattern.

2 . The pattern verifying method according to claim 1 , if the inspection process is passed, outputting the first revised pattern to form the first photo-mask, and outputting the second revised pattern to form the second photo-mask.

3 . The pattern verifying method according to claim 1 , if the inspection process is not passed, a repair process is performed for the first revised pattern and/or the second revised pattern.

4 . The pattern verifying method according to claim 3 , wherein the repair process comprises performing a third OPC process for the first revised pattern and/or a fourth OPC process for the second revised pattern.

5 . The pattern verifying method according to claim 1 , wherein the DPT process comprises using a hard mask etching process to form a patterned hard mask with a target pattern, and the DPT process comprises using a first photo-mask and a second photo-mask.

6 . The pattern verifying method according to claim 5 , wherein the DPT process comprises:
performing a first lithography process for a first photoresist layer by using the first photo-mask; performing a second lithography process for a second photoresist layer by using the second photo-mask; and performing the hard mask etching process to etch a hard mask thereby forming the patterned hard mask.

7 . The pattern verifying method according to claim 1 , wherein the AMI process comprises checking if the patterned hard mask comprises a weak pattern.

8 . The pattern verifying method according to claim 1 , wherein the DPT process further comprises: performing a target layer etching process by using the patterned hard mask as a mask to form a patterned target layer.

9 . The pattern verifying method according to claim 8 , wherein the inspection process comprises an after etching inspection (AEI) process, which considers the target pattern.

10 . The pattern verifying method according to claim 9 , wherein the AEI process comprises checking if the patterned target layer comprises a weak pattern.

11 . The pattern verifying method according to claim 6 , wherein the inspection process further comprises a first ADI process, which comprises consider the first revised pattern and parameters of the first lithography process.

12 . The pattern verifying method according to claim 11 , wherein the parameters of the first lithography process comprises: light source, lens, development agent, type of the first photo-mask, material or thickness of the first photoresist layer.

13 . The pattern verifying method according to claim 6 , wherein the inspection process further comprises a second ADI process, which comprises consider the second revised pattern and parameters of the second lithography process.

14 . The pattern verifying method according to claim 13 , wherein the parameters of the second lithography process comprises: light source, lens, development agent, type of the second photo-mask, material or thickness of the second photoresist layer.

15 . The pattern verifying method according to claim 5 , wherein the DPT process comprises:
performing a first lithography process for a first photoresist layer by using the first photo-mask; performing a first etching process for etching a hard mask; performing a second lithography process for a second photoresist layer by using the second photo-mask; and performing a second etching process for etching the hard mask, thereby forming the patterned hard mask.

Assignees

• United Microelectronics Corp

Inventors

• Hsieh Te-Hsien
• Chen Ming-Jui
• Wang Cheng-Te
• Lee Jing-Yi
• Ma jian-yuan
• Chen yan-chun

Classifications

• G03F1/70

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title

• G03F1/36 Primary

  Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title

• G03F1/84

  Inspecting · CPC title

• G03F1/72

  Repair or correction of mask defects · CPC title

• H01L21/0274

  Electricity · mapped topic