Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ecd

Patent metadata

Field	Value
Publication number	US-2016126104-A1
Application number	US-201414527671-A
Country	US
Kind code	A1
Filing date	Oct 29, 2014
Priority date	Oct 29, 2014
Publication date	May 5, 2016
Grant date	—

Abstract

In one embodiment of the present disclosure, a method for electrochemical deposition on a workpiece includes (a) obtaining a workpiece including a feature; (b) depositing a first conductive layer in the feature; (c) moving the workpiece to an integrated electrochemical deposition plating tool configured for hydrogen radical H* surface treatment and electrochemical deposition; (d) treating the first conductive layer using a hydrogen radical H* surface treatment in a treatment chamber of the plating tool to produce a treated first conductive layer; and (e) maintaining the workpiece in the same plating tool and depositing a second conductive layer in the feature on the treated first conductive layer in an electrochemical deposition chamber of the plating tool.

First claim

1 . A method for metal deposition on a workpiece, the method comprising:
receiving a workpiece in an integrated electrochemical deposition plating tool configured for hydrogen radical H* surface treatment and electrochemical deposition, the workpiece including a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first conductive layer disposed by CDV, ALD, or PVD on the dielectric layer and having one or more microfeatures comprising recessed structures having a feature size of less than 50 nm, wherein the thickness of the first conductive layer is less than 300 Å; treating the first conductive layer using a hydrogen radical H* surface treatment in a treatment chamber of the plating tool to produce a treated first conductive layer; and maintaining the workpiece in the same plating tool and depositing a second conductive layer in the feature on the treated first conductive layer in an electrochemical deposition chamber of the plating tool.

2 . The method of claim 1 , wherein treating the first conductive layer includes treatment with hydrogen radicals H* generated in a plasma chamber.

3 . The method of claim 1 , wherein treating the first conductive layer includes treatment with hydrogen radicals H* generated by a hot filament.

4 . The method of claim 1 , wherein the first conductive layer is selected from the group consisting of cobalt, ruthenium, copper, nickel, copper manganese, copper cobalt, copper aluminum, copper nickel, and alloys thereof.

5 - 6 . (canceled)

7 . The method of claim 1 , wherein the feature further includes a barrier layer or an adhesion enhancement layer deposited prior to the deposition of the first conductive layer.

8 . The method of claim 1 , wherein the hydrogen radical H* surface treatment reduces oxides formed on the first conductive layer.

9 . The method of claim 1 , wherein the hydrogen radical H* surface treatment removes residual carbon from the surface of the first conductive layer.

10 . The method of claim 1 , wherein the hydrogen radical H* surface treatment is conducted in a temperature range of room temperature to about 250° C.

11 . The method of claim 1 , wherein the hydrogen concentration in the hydrogen radical H* chamber is in the range of 2% to 10%.

12 . The method of claim 1 , wherein the hydrogen concentration in the hydrogen radical H* chamber is 100%.

13 . The method of claim 1 , wherein the hydrogen radical H* surface treatment is conducted in a pressure range of 10 mTorr to 200 mTorr.

14 . The method of claim 1 , wherein the hydrogen radical H* surface treatment is conducted in a pressure range of atmospheric or sub-atmospheric.

15 . The method of claim 3 , wherein the temperature of the hot filament is greater than 1000° C.

16 . The method of claim 2 , wherein the hydrogen radical H* surface treatment is conducted in a power range of 400 W to 1200 W.

17 . (canceled)

18 . A method for metal deposition on a workpiece, the method comprising:
receiving a workpiece in an integrated electrochemical deposition plating tool configured for hydrogen radical H* surface treatment and electrochemical deposition, the workpiece including a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first conductive layer disposed on the dielectric layer and having one or more microfeatures comprising recessed structures; exposing the workpiece to a nitrogen environment; treating the first conductive layer that has been exposed to a nitrogen environment using a hydrogen radical H* surface treatment in a treatment chamber of the plating tool to produce a treated first conductive layer; and maintaining the workpiece in the same plating tool and depositing a second conductive layer in the feature on the treated first conductive layer in an electrochemical deposition chamber of the plating tool.

19 . A method for metal deposition on a workpiece, the method comprising:
receiving a workpiece in an integrated electrochemical deposition plating tool configured for hydrogen radical H* surface treatment and electrochemical deposition, the workpiece including a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first conductive layer disposed on the dielectric layer and having one or more microfeatures comprising recessed structures; treating the first conductive layer using a hydrogen radical H* surface treatment in a treatment chamber of the plating tool to produce a treated first conductive layer; exposing the workpiece to a nitrogen environment after hydrogen radical H* surface treatment and before the deposition of the second conductive layer in the feature on the treated first conductive layer; and maintaining the workpiece in the same plating tool and depositing a second conductive layer in the feature on the treated first conductive layer in an electrochemical deposition chamber of the plating tool.

20 . The method of claim 18 , wherein oxidation of the first conductive layer is mitigated by exposure to a nitrogen environment.

21 . A method for metal deposition on a workpiece, the method comprising:
receiving a workpiece in an integrated electrochemical deposition plating tool configured for hydrogen radical H* surface treatment and electrochemical deposition, the workpiece including a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous seed layer disposed on the dielectric layer, the seed layer selected from the group consisting of CVD cobalt, CVD ruthenium, and PVD, ALD, and CVD copper, and the workpiece including one or more microfeatures comprising recessed structures having a feature size of less than 50 nm, and wherein the thickness of the seed layer is less than 300 Å; treating the seed layer using a hydrogen radical H* surface treatment in a treatment chamber of the plating tool to produce a treated first conductive layer; and maintaining the workpiece in the same plating tool and depositing a metal layer in the feature on the seed layer in an electrochemical deposition chamber of the plating tool.

22 . The method of claim 21 , wherein the feature includes a barrier layer or an adhesion enhancement layer.

Assignees

• Applied Materials Inc

Inventors

• Shaviv Roey
• Emesh Ismail T

Classifications

• H10P72/0476

  comprising at least one plating chamber · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10W20/0526

  by thermal treatment thereof · CPC title

• H10W20/0523

  by irradiating with ultraviolet or particle radiation · CPC title

• H10W20/043

  for electroplating · CPC title