Photocatalyst material and photocatalyst device

Patent metadata

Field	Value
Publication number	US-2016093448-A1
Application number	US-201514824658-A
Country	US
Kind code	A1
Filing date	Aug 12, 2015
Priority date	Jun 25, 2010
Publication date	Mar 31, 2016
Grant date	—

Abstract

A photocatalyst material and a photocatalyst device capable of generating hydrogen from water by radiation of sunlight at high efficiency. The photocatalyst material according to the present invention includes a nitride-based compound semiconductor obtained by replacement of part of Ga and/or Al by a 3d-transition metal. The nitride-based compound semiconductor has one or more impurity bands. A light absorption coefficient of the nitride-based compound semiconductor is 1,000 cm −1 or more in an entire wavelength region of 1,500 nm or less and 300 nm or more. Further, the photocatalyst material satisfies the following conditions: the energy level of the bottom of the conduction band is more negative than the redox potential of H + /H 2 ; the energy level of the top of the valence band is more positive than the redox potential of O 2 /H 2 O; and there is no or little degradation of a material even when the material is irradiated with light underwater.

First claim

1 . A photocatalyst device comprising:
a first semiconductor layer; and a second semiconductor layer laminated on the first semiconductor layer, wherein the first semiconductor layer is formed of a nitride-based compound semiconductor including a compound represented by a general formula (Al 1-y Ga y ) 1-x T x N, part of Al and/or Ga in the compound is replaced by at least one kind of 3d-transition metals T, a replacement amount of the 3d-transition metal T is x, the at least one kind of 3d-transition metals T is at least one kind selected from the group consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu, wherein 0≦y≦1, wherein: the nitride-based compound semiconductor has one or more impurity bands between a valence band and a conduction band; and a light absorption coefficient of the nitride-based compound semiconductor has a value of 1,000 cm-1 or more in an entire wavelength region of 1,500 nm or less and 300 nm or more; the second semiconductor layer is formed of (i) a compound represented by a general formula (Al 1-y Ga y ) 1-x T x N, part of Al and/or Ga in the compound being replaced by at least one kind of 3d-transition metals T, a replacement amount of a 3d-transition metal T being x, the at least one kind of 3d-transition metals T is at least one kind selected from the group consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu, wherein 0≦y≦1, wherein: the nitride-based compound semiconductor has one or more impurity bands between a valence band and a conduction band; and a light absorption coefficient of the nitride-based compound semiconductor has a value of 1,000 cm-1 or more in an entire wavelength region of 1,500 nm or less and 300 nm or more; or (ii) a compound represented by a general formula Al 1-m Ga m N (0≦m≦1, m may be the same as y).

2 . The photocatalyst device according to claim 1 , wherein 0.02≦x≦0.3.

3 . The photocatalyst device according to claim 1 , wherein the nitride-based compound semiconductor is doped with an acceptor dopant and/or a donor dopant.

4 . The photocatalyst device according to claim 1 , wherein the second semiconductor layer is formed of a compound represented by a general formula Al 1-x Ga m N (0≦m≦1, m may be the same as y).

5 . The photocatalyst device according to claim 4 , wherein the first semiconductor layer and the second semiconductor layer form a pn junction.

6 . The photocatalyst device according to claim 1 , wherein the second semiconductor layer is the a compound represented by a general formula (Al 1-y Ga y ) 1-x T x N, and the first semiconductor layer and the second semiconductor layer forms a pn junction.

7 . The photocatalyst device according to claim 1 , comprising a first layer, an intermediate layer, and a second layer which are laminated on one another, wherein:
the intermediate layer is the first semiconductor layer formed of the nitride-based compound semiconductor; and the first layer and the second layer are the second semiconductor layers formed of compounds represented by a general formula Al 1-n Ga n N (0≦n≦1, n may be the same as y).

8 . The photocatalyst device according to claim 1 , wherein when y=1, T is at least one kind selected from the group consisting of V, Cr, Co and N, and
when y=0, T is at least one kind selected from the group consisting of Sc, Ti, V, Cr, Fe, Co, Ni, and Cu.

9 . The photocatalyst device according to claim 1 , wherein 0<y<1.

10 . The photocatalyst device according to claim 1 , comprising a cathode and an anode connected to each other electrically,
wherein the first semiconductor layer or the second semiconductor layer is used for the cathode or the anode.

Assignees

• Nat Univ Corp Kyoto Inst Tech
• Sakai Chemical Industry Co

Inventors

• Sonoda Saki
• Kawasaki Osamu
• Kato Junichi
• Takenaga Mutsuo

Classifications

• C25B1/04

  by electrolysis of water · CPC title

• C01B13/0207

  Water · CPC title

• H01G9/205 Primary

  comprising a semiconductor electrode comprising AIII-BV compounds with or without impurities, e.g. doping materials · CPC title

• C01B3/042

  Decomposition of water (by electrolysis of water C25B1/04) · CPC title

• Y02E60/36

  Hydrogen production from non-carbon containing sources, e.g. by water electrolysis · CPC title