Controlled heating rate baking protocol for the synthesis of bismuth vanadate thin films

Patent metadata

Field	Value
Publication number	US-12437933-B2
Application number	US-202318176786-A
Country	US
Kind code	B2
Filing date	Mar 1, 2023
Priority date	Mar 2, 2022
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

A method for fabricating a film on a substrate and a method for controlling the heating rate of a plurality of nanoparticles to transform the plurality of nanoparticles into a plurality of nanorods and nano-cone structures includes the steps of providing a sol precursor, providing a substrate, depositing the sol precursor onto the substrate via a sol-gel technique, annealing the sol precursor under ambient pressure at a controlled heating rate, and cooling down the sol precursor to form a film.

First claim

What is claimed is:

1. A method for fabricating a film on a substrate comprising the steps of,
(a) providing a sol precursor, wherein the sol precursor is a viscosity enhanced solution;
(b) providing a substrate;
(c) depositing the sol precursor onto the substrate via a sol-gel technique comprising a single-coating step;
(d) annealing, without first drying, the deposited sol precursor under ambient pressure at a controlled heating rate in a muffle furnace at a temperature of from about 400° C. to about 500° C., wherein the controlled heating rate is from about 30° C./min to about 70° C./min; and
(e) cooling down the sol precursor to form the film.

2. The method according to claim 1 , wherein the sol precursor comprises a metal oxide, wherein the metal oxide is selected from the group consisting essentially of bismuth vanadate, zinc oxide, and a combination thereof.

3. The method according to claim 1 , wherein the substrate comprises an adhesive base, wherein the adhesive base is selected from the group consisting essentially of FTO glass, ITO glass, plain glass, and a combination thereof.

4. The method according to claim 1 , wherein the single coating step is selected from the group consisting essentially of spin coating, dip coating, and a combination thereof.

5. The method according to claim 1 , wherein the annealing step takes from about 0.5 hours to about 5 hours.

Assignees

• Univ City Hong Kong

Inventors

• Zhang Ruiqin
• Rasool Rafiqat Ui

Classifications

• C23C18/1254

  Sol or sol-gel processing · CPC title

• H01G9/2004

  characterised by the electrolyte, e.g. comprising an organic electrolyte · CPC title

• C23C18/127

  Preformed particles · CPC title

• C23C18/1283

  Control of temperature, e.g. gradual temperature increase, modulation of temperature · CPC title

• C23C18/1245

  Inorganic substrates other than metallic · CPC title