Semiconductor Photoelectrode and Method for Manufacturing Same
US-2023392269-A1 · Dec 7, 2023 · US
Semiconductor Photoelectrode
US2023154690A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023154690-A1 |
| Application number | US-202017917501-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 19, 2020 |
| Priority date | May 19, 2020 |
| Publication date | May 18, 2023 |
| Grant date | — |
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- Title
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Abstract
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A semiconductor photoelectrode that is to be located in an aqueous solution to cause a decomposition reaction of the aqueous solution upon being irradiated with light, the semiconductor photoelectrode including: a semiconductor layer that is formed on an insulative or conductive substrate and is provided with a plurality of protrusion structures that protrude in one direction that is opposite a direction in which the substrate is located; a catalyst layer that is continuously laminated on the surface of the semiconductor layer; and a wire that is electrically connected to the semiconductor layer.
First claim
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1 . A semiconductor photoelectrode that is to be located in an aqueous solution to cause a decomposition reaction of the aqueous solution upon being irradiated with light, the semiconductor photoelectrode comprising: a semiconductor layer that is formed on an insulative or conductive substrate and is provided with a plurality of protrusion structures that protrude in one direction that is opposite a direction in which the substrate is located; a catalyst layer that is continuously laminated on the surface of the semiconductor layer; and a wire that is electrically connected to the semiconductor layer. 2 . The semiconductor photoelectrode according to claim 1 , wherein the plurality of protrusion structures of the semiconductor layer are angle structures that extend in the one direction. 3 . The semiconductor photoelectrode according to claim 1 , wherein the plurality of protrusion structures of the semiconductor layer are trapezoidal structures that extend in the one direction. 4 . The semiconductor photoelectrode according to claim 1 , wherein the plurality of protrusion structures of the semiconductor layer are rectangular structures that extend in the one direction. 5 . The semiconductor photoelectrode according to claim 1 , wherein the semiconductor layer is constituted by a single layer of n-type gallium nitride. 6 . The semiconductor photoelectrode according to claim 1 , wherein the semiconductor layer is constituted by multiple layers in which a plurality of nitride semiconductors that include a layer of n-type gallium nitride formed on the substrate are layered. 7 . The semiconductor photoelectrode according to claim 1 , wherein the catalyst layer is laminated on the entire surface of the semiconductor layer on which the plurality of protrusion structures are provided. 8 . The semiconductor photoelectrode according to claim 2 , wherein the plurality of protrusion structures of the semiconductor layer are trapezoidal structures that extend in the one direction. 9 . The semiconductor photoelectrode according to claim 2 , wherein the plurality of protrusion structures of the semiconductor layer are rectangular structures that extend in the one direction. 10 . The semiconductor photoelectrode according to claim 3 , wherein the plurality of protrusion structures of the semiconductor layer are rectangular structures that extend in the one direction. 11 . The semiconductor photoelectrode according to claim 2 , wherein the semiconductor layer is constituted by a single layer of n-type gallium nitride. 12 . The semiconductor photoelectrode according to claim 3 , wherein the semiconductor layer is constituted by a single layer of n-type gallium nitride. 13 . The semiconductor photoelectrode according to claim 4 , wherein the semiconductor layer is constituted by a single layer of n-type gallium nitride. 14 . The semiconductor photoelectrode according to claim 2 , wherein the semiconductor layer is constituted by multiple layers in which a plurality of nitride semiconductors that include a layer of n-type gallium nitride formed on the substrate are layered. 15 . The semiconductor photoelectrode according to claim 3 , wherein the semiconductor layer is constituted by multiple layers in which a plurality of nitride semiconductors that include a layer of n-type gallium nitride formed on the substrate are layered. 16 . The semiconductor photoelectrode according to claim 4 , wherein the semiconductor layer is constituted by multiple layers in which a plurality of nitride semiconductors that include a layer of n-type gallium nitride formed on the substrate are layered. 17 . The semiconductor photoelectrode according to claim 2 , wherein the catalyst layer is laminated on the entire surface of the semiconductor layer on which the plurality of protrusion structures are provided. 18 . The semiconductor photoelectrode according to claim 3 , wherein the catalyst layer is laminated on the entire surface of the semiconductor layer on which the plurality of protrusion structures are provided. 19 . The semiconductor photoelectrode according to claim 4 , wherein the catalyst layer is laminated on the entire surface of the semiconductor layer on which the plurality of protrusion structures are provided. 20 . The semiconductor photoelectrode according to claim 5 , wherein the catalyst layer is laminated on the entire surface of the semiconductor layer on which the plurality of protrusion structures are provided.
Assignees
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Classifications
Organoboranes · CPC title
Hydrogen production from non-carbon containing sources, e.g. by water electrolysis · CPC title
- H01G9/205Primary
comprising a semiconductor electrode comprising AIII-BV compounds with or without impurities, e.g. doping materials · CPC title
characterised by the electroluminescent [EL] layers · CPC title
Polycyclic condensed heteroaromatic hydrocarbons · CPC title
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- What does patent US2023154690A1 cover?
- A semiconductor photoelectrode that is to be located in an aqueous solution to cause a decomposition reaction of the aqueous solution upon being irradiated with light, the semiconductor photoelectrode including: a semiconductor layer that is formed on an insulative or conductive substrate and is provided with a plurality of protrusion structures that protrude in one direction that is opposite a…
- Who is the assignee on this patent?
- Nippon Telegraph & Telephone
- What technology area does this patent fall under?
- Primary CPC classification H01G9/205. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu May 18 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).