Flexible artificial leaves for hydrogen production and methods for making

Patent metadata

Field	Value
Publication number	US-11529605-B2
Application number	US-201716331624-A
Country	US
Kind code	B2
Filing date	Sep 8, 2017
Priority date	Sep 8, 2016
Publication date	Dec 20, 2022
Grant date	Dec 20, 2022

Abstract

Devices for photoelectrodes for water splitting based on indium nanowires on flexible substrates as well as methods of manufacture by transferring nanowire arrays to flexible substrates.

First claim

What is claimed is:

1. A method of making a membrane for solar water splitting, comprising:
a. a substrate, having at least a top surface and a bottom surface;
b. forming a layer of nanowires on the top surface of the substrate, wherein the nanowires contain indium, said nanowires having a top surface and a bottom surface, wherein the bottom surface of each nanowire is embedded perpendicularly into the top surface of the substrate;
c. depositing a metal contact layer across the top surface of the nanowires, said contact layer having at least a top surface and a bottom surface;
d. depositing a supporting layer across the top surface of the contact layer, said supporting layer having at least a top surface and a bottom surface;
e. etching the supporting layer to form holes in said supporting layer, wherein the location of each hole corresponds to an exposed area of the metal contact layer; and
f. removing the substrate by etching, wherein a freely suspended membrane photo-electrode is formed.

2. The method of claim 1 , wherein the substrate is silicon.

3. The method of claim 1 , wherein the supporting layer is PDMS, photoresist, Parylene, or SU-8.

4. The method of claim 1 , wherein the etching is done using lithography.

5. The method of claim 1 , wherein said nanowires contain indium gallium nitride, indium gallium phosphide, or aluminum gallium indium phosphide, or a combination thereof.

6. The method of claim 5 , further comprising growing a sacrificial layer under the nanowires following the formation of the layer of nanowires on the substrate.

7. The method of claim 6 , wherein the sacrificial layer is comprised of titanium.

8. The method of claim 1 , wherein the removing of the substrate is done by chemical, physical or mechanical etching.

9. A method of making a photo electrode, comprising:
a. creating a first structure, comprising:
i. a substrate, having at least a top surface and a bottom surface;
ii. forming a layer of nanowires on the top surface of the substrate, wherein the nanowires contain indium, said nanowires having a top surface and a bottom surface, wherein the bottom surface of each nanowire is embedded perpendicularly into the top surface of the substrate;
iii. depositing one or more metal contact layers across the top surface of the nanowires, said contact layer having at least a top surface and a bottom surface;

b. creating a second structure, comprising:
i. a flexible substrate, having at least a top surface and a bottom surface;
ii. forming a metal contact layer across the top surface of the flexible structure, said contact layer having at least a top surface and a bottom surface, wherein the bottom surface of the contact layer is adhered to the top surface of the flexible surface;

c. joining the first structure to the second structure by attaching the top surface of the metal contact layer of the first structure to the top surface of the contact layer of the second structure to create a third structure;
d. removing the substrate of the first structure from the third structure, thereby exposing the bottom surface of the nanowires; and
e. adhering an insulating material to the third structure.

10. The method of claim 9 , wherein the nanowires contain indium gallium nitride, indium gallium phosphide, or aluminum gallium indium phosphide, or a combination thereof.

11. The method of claim 9 , wherein one metal contact layer of the first structure is comprised of gold.

12. The method of claim 9 , wherein a second metal contact layer of the first structure is comprised of nickel.

13. The method of claim 9 , wherein the metal contact layer of the second structure is comprised of gold.

14. The method of claim 9 , wherein at step c) a gold metal contact layer of the first structure is joined to a gold metal contact layer of the second structure.

15. The method of claim 9 , wherein the first and second structures are attached by a layer of conductive epoxy.

16. The method of claim 9 , wherein the flexible substrate is comprised of polyamide film.

17. The method of claim 9 , wherein the insulating layer is comprised of PDMS, photoresist, SU-8, insulating epoxy, or parlyene.

18. The method of claim 9 , wherein the substrate is silicone.

Assignees

• Univ King Abdullah Sci & Tech

Inventors

• El Afandy Rami Tarek
• Hussein Mohamed Ebaid Abdrabou
• Ooi Boon S
• Ng Tien Khee

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3416

  Nitrides · CPC title

• C25B11/03

  perforated or foraminous · CPC title

• B01J19/127 Primary

  Sunlight; Visible light · CPC title

• C25B1/55

  Photoelectrolysis · CPC title