High power spin torque oscillator integrated on a transistor

Patent metadata

Field	Value
Publication number	US-2016013754-A1
Application number	US-201414554656-A
Country	US
Kind code	A1
Filing date	Nov 26, 2014
Priority date	Jul 9, 2014
Publication date	Jan 14, 2016
Grant date	—

Abstract

Example embodiments are related to a high power spin torque oscillator that is integrated by combining a transistor. The high power spin torque oscillator according to example embodiments may include a spin torque oscillator and a transistor. The spin torque oscillator may perform an oscillation function and a transistor may perform an amplification function by integrating the spin torque oscillator and a transistor in one chip. The transistor may amplify an amplification signal of the spin torque oscillator. The high power spin torque oscillator may be integrated on FET or BJT.

First claim

What is claimed is:

1 . A method of manufacturing a high power spin torque oscillator comprising:
forming a MOSFET structure by forming a source, a drain and a gate on a silicon substrate; and forming a spin torque oscillator by stacking a free magnetic layer, a nonmagnetic layer and a fixed magnetic layer between an insulator of the gate and a gate electrode, wherein the spin torque oscillator having an oscillation function is integrated on a transistor having an amplification function.

2 . The method of claim 1 ,
wherein, in case a voltage source is applied to the spin torque oscillator, a spin current is bypassed by forming a bypass resistor between the free magnetic layer or the fixed magnetic layer on the insulator of the gate and a ground voltage so that a gate voltage is generated.

3 . The method of claim 1 ,
wherein, in case a current source is applied to the spin torque oscillator, a electrode pad is connected to the free magnetic layer or the fixed magnetic layer on the insulator of the gate and one end of the spin torque oscillator is connected to a ground voltage so that a gate voltage is generated by a self-resistor of the spin torque oscillator.

4 . A method of manufacturing a high power spin torque oscillator comprising:
forming a BJT structure by forming a emitter, a base and a collector on a silicon substrate; and forming a spin torque oscillator by stacking a free magnetic layer, a nonmagnetic layer and a fixed magnetic layer between the base and a base electrode, wherein the spin torque oscillator having an oscillation function is integrated on a transistor having an amplification function.

5 . A method of manufacturing a high power spin torque oscillator comprising:
forming a BJT structure by forming a emitter, a base and a collector on a silicon substrate through a deposition of a magnetic semiconductor; and forming a spin torque oscillator by stacking a nonmagnetic layer and a fixed magnetic layer between the base and a base electrode, wherein the spin torque oscillator having an oscillation function is integrated on a transistor having an amplification function.

6 . The method of claim 5 ,
wherein the spin torque oscillator is formed with a pillar structure or a point contact structure.

7 . A high power spin torque oscillator comprising:
a spin torque oscillator; and a transistor, wherein the spin torque oscillator and the transistor are integrated in the high power spin torque oscillator in a form of one chip.

8 . The high power spin torque oscillator of claim 7 ,
wherein the spin torque oscillator has an oscillation function, and wherein the transistor has a function of amplifying an oscillation signal of the spin torque oscillator.

9 . The high power spin torque oscillator of claim 7 ,
wherein the spin torque oscillator is formed by stacking a free magnetic layer, a nonmagnetic layer and a fixed magnetic layer.

10 . The high power spin torque oscillator of claim 7 ,
wherein a structure of the spin torque oscillator is a tunneling magnetoresistance (TMR) structure.

11 . The high power spin torque oscillator of claim 7 ,
wherein a structure of the spin torque oscillator is a giant magnetoresistance (GMR) structure.

12 . The high power spin torque oscillator of claim 7 ,
wherein the spin torque oscillator is a magnetic domain wall type.

13 . The high power spin torque oscillator of claim 7 ,
wherein the spin torque oscillator is a magnetic vortex type.

14 . The high power spin torque oscillator of claim 7 ,
wherein the transistor is a FET.

15 . The high power spin torque oscillator of claim 7 ,
wherein the transistor is a BJT.

16 . The high power spin torque oscillator of claim 7 ,
wherein a voltage source is applied to the spin torque oscillator.

17 . The high power spin torque oscillator of claim 7 ,
wherein, in case the transistor is a MOSFET, a gate voltage is generated by bypassing a spin current using a bypass resistor.

18 . The high power spin torque oscillator of claim 7 ,
wherein a current source is applied to the spin torque oscillator.

Assignees

• Korea Advanced Inst Sci & Tech
• Korea Advanced Inst Of Technology

Inventors

• Shin Min Cheol
• Kang Doo Hyung
• Lee Jae Hyun

Classifications

• H10D62/184

  of lateral BJTs · CPC title

• H10D30/60

  Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) · CPC title

• H10D10/60

  Lateral BJTs · CPC title

• H10D48/385

  Devices using spin-polarised carriers · CPC title

• H10D30/027

  of lateral single-gate IGFETs · CPC title