I-shaped gate electrode for improved sub-threshold mosfet performance
US-2015380551-A1 · Dec 31, 2015 · US
of lateral single-gate IGFETs
of lateral single-gate IGFETs · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D30/027 |
| Official title | {of lateral single-gate IGFETs} |
| Display label | of lateral single-gate IGFETs |
| Total patents | 1,156 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 94 |
| 2016 | 134 |
| 2017 | 128 |
| 2018 | 116 |
| 2019 | 117 |
| 2020 | 119 |
| 2021 | 109 |
| 2022 | 103 |
| 2023 | 79 |
| 2024 | 60 |
| 2025 | 78 |
| 2026 | 19 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of Semiconductor Integrated Circuit Fabrication
US-2015364380-A1 · Dec 17, 2015 · US
Equal gate height control method for semiconductor device with different pattern densites
US-9214358-B1 · Dec 15, 2015 · US
Methods of forming semiconductor devices including a stressor in a recess
US-9214530-B2 · Dec 15, 2015 · US
Method of Manufacturing Semiconductor Device
US-2015357231-A1 · Dec 10, 2015 · US
Fabrication of ultra-shallow junctions
US-9202693-B2 · Dec 1, 2015 · US
Methods for fabricating semiconductor devices
US-2015340284-A1 · Nov 26, 2015 · US
Method of Forming High-K Gates Dielectrics
US-2015332926-A1 · Nov 19, 2015 · US
Manufacturing method of n-type mosfet
US-2015325684-A1 · Nov 12, 2015 · US
Metal-semiconductor contact structure with doped interlayer
US-2015325484-A1 · Nov 12, 2015 · US
Source/drain profile engineering for enhanced p-mosfet
US-2015311293-A1 · Oct 29, 2015 · US
Semiconductor memory device employing a ferromagnetic gate
US-2015303313-A1 · Oct 22, 2015 · US
Semiconductor structure and a method for processing a carrier
US-2015303254-A1 · Oct 22, 2015 · US
Micromechanical sensor apparatus having a movable gate and corresponding production method
US-9166066-B2 · Oct 20, 2015 · US
Radio-frequency switches having silicon-on-insulator field-effect transistors with reduced linear region resistance
US-9159743-B2 · Oct 13, 2015 · US
Deposition of titanium-aluminum layers
US-2015279680-A1 · Oct 1, 2015 · US
Method for producing a light-emitting diode display and light-emitting diode display
US-2015279902-A1 · Oct 1, 2015 · US
High-K film apparatus and method
US-9147736-B2 · Sep 29, 2015 · US
Semiconductor structure and method for manufacturing the same
US-2015270399-A1 · Sep 24, 2015 · US
Methods and systems for using oxidation layers to improve device surface uniformity
US-2015270127-A1 · Sep 24, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D30/027?
- CPC H10D30/027 is the Cooperative Patent Classification code for “of lateral single-gate IGFETs.”
- How many patents are filed under CPC H10D30/027 (of lateral single-gate IGFETs)?
- Our database includes 1,156 publications tagged with this CPC code.
- Is patent activity under CPC H10D30/027 growing?
- Publication counts under this code: 60 in 2024 vs 78 in 2025 (latest complete years).