Semiconductor devices, semiconductor structures and methods for fabricating a semiconductor structure
US-12176346-B2 · Dec 24, 2024 · US
Lateral BJTs
Lateral BJTs · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D10/60 |
| Official title | Lateral BJTs |
| Display label | Lateral BJTs |
| Total patents | 967 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 94 |
| 2016 | 121 |
| 2017 | 92 |
| 2018 | 92 |
| 2019 | 103 |
| 2020 | 63 |
| 2021 | 51 |
| 2022 | 50 |
| 2023 | 126 |
| 2024 | 90 |
| 2025 | 73 |
| 2026 | 12 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Bi-directional bi-polar device for ESD protection
US-11862735-B2 · Jan 2, 2024 · US
Bipolar transistor device fabrication methods
US-2015380513-A1 · Dec 31, 2015 · US
Method of integrating high voltage devices
US-9214457-B2 · Dec 15, 2015 · US
Lateral PNP bipolar transistor formed with multiple epitaxial layers
US-9214534-B2 · Dec 15, 2015 · US
III-V, Ge, or SiGe fin base lateral bipolar transistor structure and method
US-9209095-B2 · Dec 8, 2015 · US
Methods for fabricating improved bipolar transistors
US-9202887-B2 · Dec 1, 2015 · US
Semiconductor device and related fabrication methods
US-9184257-B2 · Nov 10, 2015 · US
Semiconductor device and method for fabricating the same
US-2015318277-A1 · Nov 5, 2015 · US
Integrated Semiconductor Device Having a Level Shifter
US-2015311196-A1 · Oct 29, 2015 · US
Field plate trench transistor and method for producing it
US-9171841-B2 · Oct 27, 2015 · US
Bipolar junction transistor with multiple emitter fingers
US-9159801-B2 · Oct 13, 2015 · US
PNP bipolar junction transistor fabrication using selective epitaxy
US-9159816-B2 · Oct 13, 2015 · US
Structures and methods for electrically and mechanically linked monolithically integrated transistor and NEMS/MEMS device
US-9159710-B2 · Oct 13, 2015 · US
III-V, SiGe, or Ge Base Lateral Bipolar Transistor and CMOS Hybrid Technology
US-2015287642-A1 · Oct 8, 2015 · US
Semiconductor device and integrated circuit
US-2015279978-A1 · Oct 1, 2015 · US
Vertically integrated active matrix backplane
US-2015279913-A1 · Oct 1, 2015 · US
Bipolar transistor device and method of fabrication
US-2015263108-A1 · Sep 17, 2015 · US
Non-planar semiconductor device with p-n junction located in substrate
US-2015263089-A1 · Sep 17, 2015 · US
Application of super lattice films on insulator to lateral bipolar transistors
US-2015263095-A1 · Sep 17, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D10/60?
- CPC H10D10/60 is the Cooperative Patent Classification code for “Lateral BJTs.”
- How many patents are filed under CPC H10D10/60 (Lateral BJTs)?
- Our database includes 967 publications tagged with this CPC code.
- Is patent activity under CPC H10D10/60 growing?
- Publication counts under this code: 90 in 2024 vs 73 in 2025 (latest complete years).