E-beam inspection apparatus and method of using the same on various integrated circuit chips
US-2016118217-A1 · Apr 28, 2016 · US
Semiconductor inspection device, and inspection method using charged particle beam
US2015303030A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015303030-A1 |
| Application number | US-201214443720-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 19, 2012 |
| Priority date | Nov 19, 2012 |
| Publication date | Oct 22, 2015 |
| Grant date | — |
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Abstract
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Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, said device being capable of applying a positive or negative voltage to the electrode and obtaining images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. First, an image (first image) is obtained using the EH and positive potential conditions. Next, an image (second image) is obtained using the EL and negative potential conditions. Next, an image (third image) is obtained at the same position as the second image, and by using the EL and positive potential conditions.
First claim
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1 . A semiconductor inspection device characterized in comprising a charged particle gun to generate a charged particle beam; a sample holder to support a sample; a deflection section to make the charged particle beam scanned to a surface of the sample; a detector to detect a secondary electron generated by the charged particle beam being irradiated onto the sample; an image processing section to process an output from the detector as an image; a sample potential controlling section t…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01J37/28Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US2015303030A1 cover?
- Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode pr…
- Who is the assignee on this patent?
- Hitachi Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01J37/28. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Oct 22 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).