Etching composition, method of etching metal-containing film by using the same, and method of preparing semiconductor device by using the same

Patent metadata

Field	Value
Publication number	US-12590247-B2
Application number	US-202318194908-A
Country	US
Kind code	B2
Filing date	Apr 3, 2023
Priority date	Apr 4, 2022
Publication date	Mar 31, 2026
Grant date	Mar 31, 2026

Abstract

Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.

First claim

What is claimed is:

1 . An etching composition consisting essentially of:
an oxidizing agent; an ammonium salt; an aqueous solvent; and an accelerator, wherein the oxidizing agent includes hydrogen peroxide, and an amount of the oxidizing agent is 15 wt % to 25 wt % based on 100 wt % of the etching composition, the ammonium salt includes an ammonium cation and an organic anion, the accelerator includes a compound represented by Formula 1-1, a compound represented by Formula 1-2, a compound represented by Formula 1-3, a compound represented by Formula 1-4, a compound represented by Formula 1-5, a compound represented by Formula 1-6, a compound represented by Formula 1-7, a compound represented by Formula 1-8, or any combination thereof,

wherein, in Formulae 1-1 to 1-8,
CY 1 is a C 3 -C 8 saturated cyclic group,
X 1 is C or N,
X 2 is C(R 2 ), N(R 2 ), O, S or N(H),
X 1 and X 2 are linked to each other via a single bond,
X 3 is C(Z 1 )(Z 2 ), N(Z 1 ), C(═O) or C(═S),
X 4 is C(Z 11 )(Z 12 ), N(Z 11 ), C(═O) or C(═S),
X 5 is C(Z 1 ) or N,
X 6 is C(Z 11 ) or N,
Y 1 is C(Z 3 )(Z 4 ), N(Z 3 ), C(═O) or C(═S),
T 1 is *—OH, *—SH, or *—NH 2 ,
T 1a is O or S,
R 2 is *—O(Z 5 ), *—S(Z 5 ), or *—N(Z 5 )(Z 6 ),
Z 1 to Z 6 , Z 11 , and Z 12 are each independently,
hydrogen, deuterium, *—F, *—Cl, *—Br, *—I, *—OH, *—SH, *—NH 2 , *—C(═O)H, *—C(═S)H, *—C(═O)—OH, *—C(═S)—OH, *—C(═O)—SH, *—C(═S)—SH, *—C(═O)—(NH 2 ), *—C(═S)—(NH 2 ), *—NH—C(═O)—(NH 2 ), *—NH—C(═S)—(NH 2 ), *—C(OH)—C(═O)—OH, *—C(SH)—C(═O)—OH, *—C(OH)—C(═S)—OH, *—C(OH)—C(═O)—SH, *—C(SH)—C(═S)—OH, *—C(SH)—C(═O)—SH, *—C(OH)—C(═S)—SH, *—C(SH)—C(═S)—SH, *—C(═O)—C(═O)—OH, *—C(═S)—C(═O)—OH, *—C(═O)—C(═S)—OH, *—C(═O)—C(═O)—SH, *—C(═S)—C(═S)—OH, *—C(═S)—C(═O)—SH, *—C(═O)—C(═S)—SH, *—C(═S)—C(═S)—SH, or *—C(═O)—ONH 4 ; or
a C 1 -C 20 alkyl group, a C 2 -C 20 alkenyl group, a C 1 -C 20 alkoxy group, a C 6 -C 20 aryl group, or a C 2 -C 20 heteroaryl group, unsubstituted or substituted with deuterium, *—F, *—Cl, *—Br, *—I, *—OH, *—SH, *—NH 2 , *—C(═O)H, *—C(═S)H, *—C(═O)—OH, *—C(═S)—OH, *—C(═O)—SH, *—C(═S)—SH, *—C(═O)—(NH 2 ), *—C(═S)—(NH 2 ), *—NH—C(═O)—(NH 2 ), *—NH—C(═S)—(NH 2 ), *—C(OH)—C(═O)—OH, *—C(SH)—C(═O)—OH, *—C(OH)—C(═S)—OH, *—C(OH)—C(═O)—SH, *—C(SH)—C(═S)—OH, *—C(SH)—C(═O)—SH, *—C(OH)—C(═S)—SH, *—C(SH)—C(═S)—SH, *—C(═O)—C(═O)—OH, *—C(═S)—C(═O)—OH, *—C(═O)—C(═S)—OH, *—C(═O)—C(═O)—SH, *—C(═S)—C(═S)—OH, *—C(═S)—C(═O)—SH, *—C(═O)—C(═S)—SH, *—C(═S)—C(═S)—SH, *—C(═O)—ONH 4 , or any combination thereof,
a1 is an integer from 0 to 5,
A 1 is,
hydrogen or deuterium; or
a C 1 -C 20 alkyl group, a C 2 -C 20 alkenyl group, a C 1 -C 20 alkoxy group, a C 6 -C 20 aryl group, or a C 2 -C 20 heteroaryl group, unsubstituted or substituted with deuterium, *—F, *—Cl, *—Br, *—I, a C 1 -C 20 alkyl group, a C 1 -C 20 alkoxy group, or any combination thereof, and
* indicates a binding site to a neighboring atom.

2 . The etching composition of claim 1 , wherein the etching composition consists of the oxidizing agent, the ammonium salt, the aqueous solvent, and the accelerator.

3 . The etching composition of claim 1 , wherein CY 1 is a 5-membered saturated cyclic group or a 6-membered saturated cyclic group.

4 . The etching composition of claim 1 , wherein CY 1 is a cyclopentane group, a cyclohexane group, a cycloheptane group, a pyrrolidine group, a piperidine group, an azepane group, a tetrahydrofuran group, a tetrahydrothiophene group, a tetrahydro-2H-pyran group, or a tetrahydro-2H-thiopyran group.

5 . The etching composition of claim 1 , wherein Z 1 to Z 6 , Z 11 , and Z 12 are each independently,
hydrogen, deuterium, *—F, *—Cl, *—Br, *—I, *—OH, *—SH, *—NH 2 , *—C(═O)H, *—C(═S)H, *—C(═O)—OH, *—C(═S)—OH, *—C(═O)—SH, *—C(═S)—SH, *—C(═O)—(NH 2 ), *—C(═S)—(NH 2 ), *—NH—C(═O)—(NH 2 ), *—NH—C(═S)—(NH 2 ), *—C(OH)—C(═O)—OH, *—C(SH)—C(═O)—OH, *—C(OH)—C(═S)—OH, *—C(OH)—C(═O)—SH, *—C(SH)—C(═S)—OH, *—C(SH)—C(═O)—SH, *—C(OH)—C(═S)—SH, *—C(SH)—C(═S)—SH, *—C(═O)—C(═O)—OH, *—C(═S)—C(═O)—OH, *—C(═O)—C(═S)—OH, *—C(═O)—C(═O)—SH, *—C(═S)—C(═S)—OH, *—C(═S)—C(═O)—SH, *—C(═O)—C(═S)—SH, *—C(═S)—C(═S)—SH, or *—C(═O)—ONH 4 ; or a C 1 -C 20 alkyl group unsubstituted or substituted with deuterium, *—F, *—Cl, *—Br, *—I, *—OH, *—SH, *—NH 2 , *—C(═O)H, *—C(═S)H, *—C(═O)—OH, *—C(═S)—OH, *—C(═O)—SH, *—C(═S)—SH, *—C(═O)—(NH 2 ), *—C(═S)—(NH 2 ), *—NH—C(═O)—(NH 2 ), *—NH—C(═S)—(NH 2 ), *—C(OH)—C(═O)—OH, *—C(SH)—C(═O)—OH, *—C(OH)—C(═S)—OH, *—C(OH)—C(═O)—SH, *—C(SH)—C(═S)—OH, *—C(SH)—C(═O)—SH, *—C(OH)—C(═S)—SH, *—C(SH)—C(═S)—SH, *—C(═O)—C(═O)—OH, *—C(═S)—C(═O)—OH, *—C(═O)—C(═S)—OH, *—C(═O)—C(═O)—SH, *—C(═S)—C(═S)—OH, *—C(═S)—C(═O)—SH, *—C(═O)—C(═S)—SH, *—C(═S)—C(═S)—SH, *—C(═O)—ONH 4 , or any combination thereof.

6 . The etching composition of claim 1 , wherein in Formulae 1-3 to 1-8,
X 3 is C(Z 1 )(Z 2 ), C(═O) or C(═S), X 4 is C(Z 11 )(Z 12 ), C(═O) or C(═S), X 5 is C(Z 1 ), X 6 is C(Z 11 ), Y 1 is C(Z 3 )(Z 4 ), C(═O) or C(═S), T 1 is *—OH or *—SH, R 2 is *—O(Z 5 ) or *—S(Z 5 ), and Z 1 to Z 6 , Z 11 , and Z 12 are each independently, hydrogen, deuterium, *—F, *—Cl, *—Br, *—I, *—OH, *—SH, *—C(═O)H, *—C(═S)H, *—C(═O)—OH, *—C(═S)—OH, *—C(═O)—SH, *—C(═S)—SH, *—C(OH)—C(═O)—OH, *—C(SH)—C(═O)—OH, *—C(OH)—C(═S)—OH, *—C(OH)—C(═O)—SH, *—C(SH)—C(═S)—OH, *—C(SH)—C(═O)—SH, *—C(OH)—C(═S)—SH, *—C(SH)—C(═S)—SH, *—C(═O)—C(═O)—OH, *—C(═S)—C(═O)—OH, *—C(═O)—C(═S)—OH, *—C(═O)—C(═O)—SH, *—C(═S)—C(═S)—OH, *—C(═S)—C(═O)—SH, *—C(═O)—C(═S)—SH, or *—C(═S)—C(═S)—SH; or a C 1 -C 20 alkyl group, a C 2 -C 20 alkenyl group, a C 1 -C 20 alkoxy group, a C 6 -C 20 aryl group, or a C 2 -C 20 heteroaryl group, unsubstituted or substituted with deuterium, *—F, *—Cl, *—Br, *—I, *—OH, *—SH, *—C(═O)H, *—C(═S)H, *—C(═O)—OH, *—C(═S)—OH, *—C(═O)—SH, *—C(═S)—SH, *—C(OH)—C(═O)—OH, *—C(SH)—C(═O)—OH, *—C(OH)—C(═S)—OH, *—C(OH)—C(═O)—SH, *—C(SH)—C(═S)—OH, *—C(SH)—C(═O)—SH, *—C(OH)—C(═S)—SH, *—C(SH)—C(═S)—SH, *—C(═O)—C(═O)—OH, *—C(═S)—C(═O)—OH, *—C(═O)—C(═S)—OH, *—C(═O)—C(═O)—SH, *—C(═S)—C(═S)—OH, *—C(═S)—C(═O)—SH, *—C(═O)—C(═S)—SH, *—C(═S)—C(═S)—SH, or any combination thereof.

7 . The etching composition of claim 1 , wherein, the accelerator includes a compound represented by Formula 1-1, a compound represented by Formula 1-2, or any combination thereof.

8 . The etching composition of claim 1 , wherein, the accelerator includes a compound represented by Formula 1-3, a compound represented by Formula 1-4, a compound represented by Formula 1-5, a compound represented by Formula 1-6, a compound represented by Formula 1-7, a compound represented by Formula 1-8, or any combination thereof.

9 . The etching composition of claim 1 , wherein the accelerator comprises at least one of Compounds E1 to E18:

10 . The etching composition of claim 1 , wherein an amount of the ammonium salt is in a range of about 0.5 wt % to about 20 wt % based on 100 wt % of the etching composition.

11 . The etching composition of claim 1 , wherein an amount of the accelerator is in a range of about 0.001 wt % to about 20 wt % based on 100 wt % of the etching composition.

12 . The etching composition of claim 1 , wherein the etching composition has a pH in a range of about 3.0 to about 8.3.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Hwang Kyuyoung
• Kang Byungjoon
• Kim Daihyun
• Kim Sungmin
• Kim Hwang Suk
• Park Mihyun
• Oh Jungmin
• Lee Hyosan
• Choi Byoungki

Classifications

• H10P50/667

  by liquid etching only · CPC title

• H10P50/283

  by chemical means · CPC title

• C23F1/16

  Acidic compositions (C23F1/42 takes precedence) · CPC title

• C23F1/26

  for etching refractory metals · CPC title

• C23F1/20

  for etching aluminium or alloys thereof · CPC title