Overlay correction for advanced integrated-circuit devices

Patent metadata

Field	Value
Publication number	US-12585182-B2
Application number	US-202318390424-A
Country	US
Kind code	B2
Filing date	Dec 20, 2023
Priority date	Dec 29, 2022
Publication date	Mar 24, 2026
Grant date	Mar 24, 2026

Abstract

Various examples described herein include a correction for a layer-to-layer or substrate-to-substrate overlay alignment based upon feedback from critical-dimension (CD) measurements of locations of various features that are to be formed on subsequently formed layers of a substrate with regard to locations of similar features on previously formed layers. The layer-to-layer or substrate-to-substrate overlay-alignment feedback can be enhanced by determining positions of multiple ones of the features on each of the formed layers with respect to the first layer in the stack. Further, the layer-to-layer or substrate-to-substrate overlay-alignment feedback can be enhanced by determining positions of multiple ones of the features on each of the formed layers with respect to the previously formed layer. Overlay-alignment errors may be sent back to a photolithographic exposure tool. An accumulated overlay error can be flagged. Other techniques and methods are also disclosed.

First claim

What is claimed:

1 . A method for correcting overlay errors in a multi-layer process, the method comprising:
receiving, at a measuring tool, a substrate with a first plurality of features provided at a plurality of locations on a first layer; measuring an x-coordinate offset and a y-coordinate offset of the first plurality of features on the first layer; receiving, at a measuring tool, the substrate with a second plurality of features on a second layer; measuring an x-coordinate offset and a y-coordinate offset of the second plurality of features on the second layer with reference to a select location of the plurality of locations associated with at least one of the first plurality of features and defined x-coordinates and y-coordinates for the at least one of first plurality of features on the substrate; and feeding back corrections for the x-coordinate offset and the y-coordinate offset of the second plurality of features to a photolithographic exposure tool prior to exposing a third layer.

2 . The method of claim 1 , wherein the first plurality of features and the second plurality of features include conductive contact-points of redistribution layers (RDLs).

3 . The method of claim 1 , wherein the first plurality of features and the second plurality of features comprise a plurality of interconnect vias.

4 . The method of claim 1 , wherein the measuring of the x-coordinate offset and the y-coordinate offset of at least a portion of the second plurality of features from the exposed locations of the first plurality of features is performed automatically.

5 . The method of claim 1 , further comprising using user-input overlay results in addition to the measuring of the x-coordinate offset and the y-coordinate offset of at least a portion of the second plurality of features.

6 . The method of claim 1 , further comprising calculating a value of a correction for the x-coordinate offset and the y-coordinate offset based on shifting the x-coordinate offset and the y-coordinate offset of the second plurality of features to a center location of exposed locations of the first plurality of features.

7 . The method of claim 1 , further comprising comparing a total overlay error for a total number of n layers to a pre-defined threshold value for the n layers.

8 . The method of claim 7 , further comprising:
based on a determination that the total overlay error is greater than the pre-defined threshold value, reworking one or more layers to provide a total overlay value that is less than or equal to the pre-defined threshold value.

9 . The method of claim 1 , further comprising:
determining an accumulation overlay-error after forming each layer on the substrate; and making a determination whether the accumulation overlay-error is less than or equal to a pre-defined threshold value determined for each layer.

10 . A system to correct overlay errors in a multi-layer process, the system comprising:
a measurement tool configured to: receive a substrate with a first plurality of features provided at a plurality of locations on a first layer; measure an x-coordinate offset and a y-coordinate offset of the first plurality of features on the first layer; and send correction information to a photolithographic exposure tool; wherein the measurement tool is to receive the substrate with a second plurality of features on a second layer and to measure an x-coordinate offset and a y-coordinate offset of the second plurality of features on the second layer with reference to a select location of the plurality of locations associated with at least one of the first plurality of features and defined x-coordinates and y-coordinates for the at least one of first plurality of features on the substrate and to send the correction information for the x-coordinate offset and the y-coordinate offset of the second plurality of features back to the photolithographic exposure tool prior to exposing a third layer.

11 . The system of claim 10 , wherein the measurements of the x-coordinate offset and the y-coordinate offset of at least a portion of the second plurality of features from the exposed locations of the plurality of features are to be performed automatically.

12 . The system of claim 10 , further comprising using user-input overlay results in addition to the measurements of the x-coordinate offset and the y-coordinate offset of at least a portion of the second plurality of features.

13 . The system of claim 10 , further comprising calculating a value of a correction for the x-coordinate offset and the y-coordinate offset based on shifting the x-coordinate offset and the y-coordinate offset of the second plurality of features to a center location of exposed locations of the first plurality of features.

14 . The system of claim 10 , further comprising comparing a total overlay error for a total number of n layers to a pre-defined threshold value for the n layers.

15 . The system of claim 14 , further comprising:
based on a determination that the total overlay error is greater than the pre-defined threshold value, reworking one or more layers to provide a total overlay value that is less than or equal to the pre-defined threshold value.

16 . The system of claim 10 , further comprising:
determining an accumulation overlay-error after forming each layer on the substrate; and making a determination whether the accumulation overlay-error is less than or equal to a pre-defined threshold value determined for each layer.

17 . The method of claim 1 , further comprising:
exposing a third plurality of features on the third layer based on the corrections for the x-coordinate offset and the y-coordinate offset.

18 . The method of claim 1 , wherein the select location is a center location of the at least one of the first plurality of features.

19 . The system of claim 10 , wherein the photolithographic exposure tool is configured to:
expose a third plurality of features on the third layer based on the corrections for the x-coordinate offset and the y-coordinate offset.

20 . The system of claim 10 , wherein the select location is a center location of the at least one of the first plurality of features.

Assignees

• Onto Innovation Inc

Inventors

• Best Keith F
• Chang John

Classifications

• G03F7/2022 Primary

  Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure · CPC title

• G03F1/84

  Inspecting · CPC title

• G03F7/70633

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• G03F1/72 Primary

  Repair or correction of mask defects · CPC title

• G03F7/70516 Primary

  Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors · CPC title