Light emitting display panel

Patent metadata

Field	Value
Publication number	US-12581995-B2
Application number	US-202117523905-A
Country	US
Kind code	B2
Filing date	Nov 10, 2021
Priority date	Dec 24, 2020
Publication date	Mar 17, 2026
Grant date	Mar 17, 2026

Abstract

A light emitting display panel includes a driving transistor, and a storage capacitor including at least three electrodes to reduce a size of the driving transistor or the storage capacitor. The light emitting display panel comprises a light emitting element, the driving transistor connected to the light emitting element, and the storage capacitor connected to a gate and a first electrode of the driving transistor. The driving transistor includes a light shielding electrode used as the gate of the driving transistor, a buffer covering the light shielding electrode, an active portion provided on an upper surface of the buffer, forming the first electrode, a second electrode and a semiconductor portion of the driving transistor, a gate insulating layer covering the active portion, and a gate electrode provided on an upper surface of the gate insulating layer and connected to the light shielding electrode.

First claim

What is claimed is:

1 . A light emitting display panel comprising:
a light emitting element provided in a pixel; a driving transistor connected to the light emitting element; and a storage capacitor connected to a gate and a first electrode of the driving transistor, wherein the driving transistor includes:
a light shielding electrode provided on a substrate and used as the gate of the driving transistor;
a buffer covering the light shielding electrode;
an active portion provided on an upper surface of the buffer,
a gate insulating layer covering at least a portion of the active portion; and
a gate electrode provided on and contacting an upper surface of the gate insulating layer, connected with the light shielding electrode and used as the gate of the driving transistor, wherein an electrode of the storage capacitor is connected to at least one of the light shielding electrode and the gate electrode,
wherein the storage capacitor includes:
a first active capacitor electrode extending from the first electrode of the active portion of the driving transistor;
a first gate capacitor electrode extending from and contacting the gate electrode, wherein the first gate capacitor electrode overlaps at least a portion of the first active capacitor electrode with the gate insulating layer therebetween; and
a first light shielding capacitor electrode extending from the light shielding electrode,
wherein the active portion includes the first electrode, a second electrode, and a semiconductor portion of the driving transistor, wherein the semiconductor portion includes a semiconductor layer formed of a semiconductor, wherein the first electrode includes a first layer extending from the semiconductor layer;
and a second layer on the first layer, the second layer being formed of a metal,
wherein the first active capacitor electrode includes a first reference electrode extending from the first layer; and a second reference electrode provided on an upper surface of the first reference electrode, the second reference electrode being extending from the second layer, wherein the light shielding electrode under the semiconductor portion and the first electrode overlaps the semiconductor portion and the first electrode, wherein the first light shielding capacitor electrode is provided on the same layer as the light shielding electrode, wherein the first light shielding capacitor electrode is provided under the first active capacitor electrode, which includes the first reference electrode and the second reference, and at least a portion of the first active capacitor electrode overlaps the first light shielding capacitor electrode with the buffer therebetween, and wherein the first light shielding capacitor electrode is provided under the first gate capacitor electrode and the first active capacitor electrode, which is provided under the first gate capacitor electrode, and at least a portion of the first gate capacitor electrode overlaps the first light shielding capacitor electrode with the first active capacitor electrode therebetween.

2 . The light emitting display panel of claim 1 , wherein the storage capacitor includes three electrodes provided in their respective layers different from one another.

3 . The light emitting display panel of claim 1 , wherein the first gate capacitor electrode and the first light shielding capacitor electrode are connected to each other through a contact hole passing through the gate insulating layer and the buffer.

4 . The light emitting display panel of claim 1 , wherein the storage capacitor includes:
a (1-1) th capacitor comprised of the first active capacitor electrode and the first gate capacitor electrode; and a (1-2) th capacitor comprised of the first active capacitor electrode and the first light shielding capacitor electrode.

5 . The light emitting display panel of claim 1 , wherein the storage capacitor includes:
a second active capacitor electrode provided on the upper surface of the buffer, wherein the second active capacitor electrode is spaced apart from the active portion; a second gate capacitor electrode provided on the upper surface of the gate insulating layer and overlapped with the second active capacitor electrode, wherein the second gate capacitor electrode is connected to the first electrode of the driving transistor through a contact hole in the gate insulating layer; and a second light shielding capacitor electrode provided on the substrate, wherein the second light shielding capacitor is spaced apart from the light shielding electrode and overlapped with the second active capacitor electrode.

6 . The light emitting display panel of claim 5 , wherein the second active capacitor electrode includes:
a first reference electrode spaced apart from the semiconductor portion of the active portion, the first reference electrode having a same material as the semiconductor portion of the active portion; and a second reference electrode provided on an upper surface of the first reference electrode.

7 . The light emitting display panel of claim 5 , wherein the second active capacitor electrode is connected to at least one of the light shielding electrode and the gate electrode, and the second light shielding capacitor electrode is connected to the second gate capacitor electrode.

8 . The light emitting display panel of claim 5 , wherein the storage capacitor includes:
a (2-1) th capacitor comprised of the second active capacitor electrode and the second gate capacitor electrode; and a (2-2) th capacitor comprised of the second active capacitor electrode and the second light shielding capacitor electrode.

9 . A light emitting display panel comprising:
a light emitting element; a driving transistor configured to drive the light emitting element, the driving transistor comprising:
an active portion including a first electrode, a second electrode, and a semiconductor portion,
a gate insulating layer on at least a portion of the active portion, and
a gate electrode disposed on at least a portion of the gate insulating layer;
a light shielding electrode on a substrate; and a storage capacitor electrically connected to the driving transistor, wherein the storage capacitor includes:
a first active capacitor electrode extending from the first electrode of the active portion of the driving transistor;
a first gate capacitor electrode extending from and contacting the gate electrode, wherein the first gate capacitor electrode overlaps at least a portion of the first active capacitor electrode with the gate insulating layer therebetween; and
a first light shielding capacitor electrode extending from the light shielding electrode,
wherein the semiconductor portion includes a semiconductor layer formed of a semiconductor, wherein the first electrode includes a first layer extending from the semiconductor layer;
and a second layer on the first layer, the second layer being formed of a metal,
wherein the first active capacitor electrode includes a first reference electrode extending from the first layer; and a second reference electrode provided on an upper surface of the first reference electrode, the second reference electrode being extending from the second layer, wherein the light shielding electrode under the semiconductor portion and the first electrode overlaps the semiconductor portion and the first electrode, wherein the first light shielding capacitor electrode is provided on the same layer as the light shielding electrode, wherein the first light shielding capacitor electrode is provided under the first active capacitor electrode, which includes the first reference electrode and the second reference, and at least a portion of

Assignees

• Lg Display Co Ltd

Inventors

• Jang Hun
• Lee Ji-Heun
• Lee Soyoung

Classifications

• H10W42/20

  protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons · CPC title

• H10K59/131

  Interconnections, e.g. wiring lines or terminals · CPC title

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title

• H10D86/481

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title