Organic light emitting diode display device and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-10985068-B2
Application number	US-202016820291-A
Country	US
Kind code	B2
Filing date	Mar 16, 2020
Priority date	Dec 23, 2013
Publication date	Apr 20, 2021
Grant date	Apr 20, 2021

Abstract

An organic light emitting diode display device comprises a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer. The device further includes a storage capacitor including a first capacitor electrode electrically coupled to a drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to a gate electrode of the driving thin film transistor. The device also includes an organic light emitting diode connected to the drain electrode of the driving transistor. The gate insulating layer has at least one hole in a region where the gate insulating layer overlaps the second semiconductor layer, thereby exposing the second semiconductor layer to the second capacitor electrode.

First claim

What is claimed is:

1. A display device comprising:
a substrate including a first region and a second region;
a light-blocking layer formed on the substrate and disposed in the first region of the substrate;
a first capacitor electrode formed on the substrate and disposed in the second region of the substrate;
a buffer layer on the light-blocking layer and the first capacitor electrode;
a thin film transistor formed on the buffer layer and disposed in the first region, the thin film transistor including a semiconductor layer, a gate electrode overlapping the semiconductor layer with a gate insulating layer therebetween, a source electrode contacting one side of the semiconductor layer, and a drain electrode contacting another side of the semiconductor layer;
a capacitor pattern disposed in the second region and overlapping the first capacitor electrode with the buffer layer therebetween; and
a second capacitor electrode disposed in the second region and overlapping the capacitor pattern with an inter-insulating layer therebetween,
wherein a first capacitor of a storage capacitor includes the first capacitor electrode and the capacitor pattern,
wherein a second capacitor of the storage capacitor includes the second capacitor electrode,
wherein the gate insulating layer has at least one hole overlapping the capacitor pattern,
wherein the first capacitor electrode is connected to the second capacitor electrode, and the first capacitor electrode is formed of same material as the light-blocking layer, and
wherein the capacitor pattern is formed on the buffer layer and formed of same material as the semiconductor layer of the thin film transistor.

2. The display device of claim 1 , wherein:
the inter-insulating layer is formed on the capacitor pattern, the gate electrode of the thin film transistor, and the semiconductor layer of the thin film transistor, and
the second capacitor electrode is formed on the inter-insulating layer and formed of same material as the drain electrode of the thin film transistor.

3. The display device of claim 1 , wherein the inter-insulating layer is disposed between the gate electrode and the drain electrode.

4. The display device of claim 1 , further comprising:
a third capacitor electrode formed on the capacitor pattern and overlapping the capacitor pattern,
wherein the third capacitor electrode is formed of same material as the gate electrode of the thin film transistor.

5. The display device of claim 4 , wherein the third capacitor electrode contacts the capacitor pattern through the at least one hole.

6. The display device of claim 4 , wherein the first capacitor further includes the third capacitor electrode, and the second capacitor further includes the third capacitor electrode.

7. A display device comprising:
a substrate including a first region and a second region;
a light-blocking layer formed on the substrate and disposed in the first region of the substrate;
a first capacitor electrode formed on the substrate and disposed in the second region of the substrate;
a buffer layer on the light-blocking layer and the first capacitor electrode;
a thin film transistor formed on the buffer layer and disposed in the first region, the thin film transistor including a semiconductor layer, a gate electrode overlapping the semiconductor layer with a gate insulating layer therebetween, a source electrode contacting one side of the semiconductor layer, and a drain electrode contacting another side of the semiconductor layer;
a capacitor pattern disposed in the second region and overlapping the first capacitor electrode with the buffer layer therebetween;
a second capacitor electrode disposed in the second region and overlapping the capacitor pattern with an inter-insulating layer therebetween; and
a third capacitor electrode formed on the capacitor pattern and overlapping the capacitor pattern,
wherein a first capacitor of a storage capacitor includes the first capacitor electrode and the capacitor pattern,
wherein a second capacitor of the storage capacitor includes the second capacitor electrode,
wherein the gate insulating layer has at least one hole overlapping the capacitor pattern, and
wherein the third capacitor electrode is formed of same material as the gate electrode of the thin film transistor.

8. The display device of claim 7 , wherein the third capacitor electrode contacts the capacitor pattern through the at least one hole.

9. The display device of claim 7 , wherein the first capacitor further includes the third capacitor electrode, and the second capacitor further includes the third capacitor electrode.

10. The display device of claim 7 , wherein the first capacitor electrode is connected to the second capacitor electrode, and the first capacitor electrode is formed of same material as the light-blocking layer.

11. The display device of claim 10 , wherein the capacitor pattern is formed on the buffer layer and formed of same material as the semiconductor layer of the thin film transistor.

12. The display device of claim 11 , wherein:
the inter-insulating layer is formed on the capacitor pattern, the gate electrode of the thin film transistor, and the semiconductor layer of the thin film transistor, and
the second capacitor electrode is formed on the inter-insulating layer and formed of same material as the drain electrode of the thin film transistor.

13. The display device of claim 7 , wherein the inter-insulating layer is disposed between the gate electrode and the drain electrode.

Assignees

• Lg Display Co Ltd

Inventors

• Lee Young-Jang
• Jeong Ho-Young

Classifications

• H10D64/013

  of electrodes having a conductor capacitively coupled to a semiconductor by an insulator · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/021

  of multiple TFTs · CPC title

• H10D84/01

  Manufacture or treatment · CPC title