Organic light emitting diode display device and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-9324740-B2
Application number	US-201414575321-A
Country	US
Kind code	B2
Filing date	Dec 18, 2014
Priority date	Dec 23, 2013
Publication date	Apr 26, 2016
Grant date	Apr 26, 2016

Abstract

An organic light emitting diode display device comprises a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer. The device further includes a storage capacitor including a first capacitor electrode electrically coupled to a drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to a gate electrode of the driving thin film transistor. The device also includes an organic light emitting diode connected to the drain electrode of the driving transistor. The gate insulating layer has at least one hole in a region where the gate insulating layer overlaps the second semiconductor layer, thereby exposing the second semiconductor layer to the second capacitor electrode.

First claim

What is claimed is:

1. An organic light emitting diode display device comprising:
a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer, a gate electrode formed on the gate insulating layer, a source electrode, and a drain electrode, the source electrode and the drain electrode formed co-planar with the gate electrode on a same side with respect to the gate insulating layer;
a storage capacitor including a first capacitor electrode electrically coupled to the drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to the gate electrode of the driving thin film transistor; and
an organic light emitting diode (OLED) connected to the drain electrode of the driving thin film transistor and configured to emit light by current driven through the OLED by the driving thin film transistor,
wherein the gate insulating layer has at least one hole in a region where the gate insulating layer overlaps the second semiconductor layer, thereby exposing the second semiconductor layer to the second capacitor electrode.

2. The organic light emitting diode display device of claim 1 , wherein the second semiconductor layer is formed thinner than the gate insulating layer.

3. The organic light emitting diode display device of claim 1 , wherein the storage capacitor further includes an insulating layer formed on the second capacitor electrode and a third capacitor electrode formed on the insulating layer and electrically coupled to the drain electrode.

4. The organic light emitting diode display device of claim 1 , wherein the first semiconductor layer and the second semiconductor layer include an oxide semiconductor material.

5. The organic light emitting diode display device of claim 1 , further comprising a light-blocking layer disposed under the first semiconductor layer and electrically connected to the gate electrode.

6. The organic light emitting diode display device of claim 1 , further comprising a connection pattern between the drain electrode and the first capacitor electrode and disposed on a same layer as the second capacitor electrode, the gate insulating layer absent in a region surrounding the connection pattern.

7. A method of fabricating an organic light emitting diode display device, comprising:
forming a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer, a gate electrode formed on the gate insulating layer, a source electrode, and a drain electrode, the source electrode and the drain electrode formed co-planar with the gate electrode on a same side with respect to the gate insulating layer;
forming a storage capacitor including a first capacitor electrode electrically coupled to the drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to the gate electrode of the driving thin film transistor; and
forming an organic light emitting diode (OLED) connected to the drain electrode of the driving thin film transistor and configured to emit light by current driven through the OLED by the driving thin film transistor,
wherein the buffer layer, the second semiconductor layer and the gate insulating layer are formed subsequent to forming of the first capacitor electrode and prior to forming of the second capacitor electrode, and
wherein forming the gate insulating layer includes forming at least one hole in the gate insulating layer in a region where the gate insulating layer overlaps the second semiconductor layer by patterning the gate insulating layer to expose the second semiconductor layer through the gate insulating layer to the second capacitor electrode.

8. The method of claim 7 , wherein the second semiconductor layer is formed thinner than the gate insulating layer.

9. The method of claim 7 , wherein forming the storage capacitor further includes forming an insulating layer on the second capacitor electrode and forming a third capacitor electrode on the insulating layer to be electrically coupled to the drain electrode.

10. The method of claim 7 , further comprising forming a light-blocking layer disposed under the first semiconductor layer and electrically connected to the gate electrode.

11. The method of claim 7 , wherein forming the second capacitor electrode includes forming a connection pattern between the drain electrode and the first capacitor electrode.

Assignees

• Lg Display Co Ltd

Inventors

• Lee Young-Jang
• Jeong Ho-Young

Classifications

• H10D64/013

  of electrodes having a conductor capacitively coupled to a semiconductor by an insulator · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/021

  of multiple TFTs · CPC title

• H10D84/01

  Manufacture or treatment · CPC title