Grid assembly for plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-12580157-B2
Application number	US-202117546516-A
Country	US
Kind code	B2
Filing date	Dec 9, 2021
Priority date	Dec 31, 2020
Publication date	Mar 17, 2026
Grant date	Mar 17, 2026

Abstract

A grid assembly for injecting process gas to a chamber. The grid assembly including a gas inlet for delivering the process gas to the grid assembly, a plurality of nozzles extending vertically through at least a portion of the grid assembly, and a plurality of layers in a vertical stacked arrangement. The plurality of layers including a top layer including one or more internal gas injection channels configured to receive process gas from the gas inlet, a bottom layer including a plurality of internal gas injection channels having one or more injection apertures configured to deliver the process gas about a horizontal plane to one or more of the plurality of nozzles, and one or more sublayers disposed between the top layer and the bottom layer, each of the one or more sublayers including an increasing number of internal gas injection channels as the one or more sublayers advance from the top layer to the bottom layer. Plasma processing apparatuses and method of processing workpiece are also provided.

First claim

What is claimed is:

1 . A grid assembly for injecting process gas to a chamber, comprising:
a gas inlet for delivering the process gas to the grid assembly; a plurality of nozzles extending vertically through at least a portion of the grid assembly; a plurality of layers in a vertical stacked arrangement, including:
a top layer comprising one or more first internal gas injection channels configured to receive process gas from the gas inlet, the one or more first internal gas injection channels are separate from the plurality of nozzles;
a bottom layer comprising a plurality of second internal gas injection channels separate from the plurality of nozzles having one or more injection apertures configured to deliver the process gas about a horizontal plane to one or more of the plurality of nozzles; and
a plurality of sublayers disposed between the top layer and the bottom layer, each one of the plurality of sublayers comprising an increasing number of internal gas injection channels as the plurality of sublayers advance from the top layer to the bottom layer.

2 . The assembly of claim 1 , wherein the plurality of sublayers comprises at least five sublayers.

3 . The assembly of claim 1 , wherein the top layer, bottom layer, and the plurality of sublayers are integrally formed.

4 . The assembly of claim 1 , wherein the bottom layer comprises more internal gas injections channels as compared to the top layer and/or the plurality of sublayers.

5 . The assembly of claim 1 , wherein the grid assembly comprises a dielectric material.

6 . The assembly of claim 1 , wherein the grid assembly comprises a metal material.

7 . The assembly of claim 1 , wherein the chamber comprises a processing chamber.

8 . The assembly of claim 1 , wherein the chamber comprises a plasma chamber.

9 . The assembly of claim 1 , wherein a flow delivery of process gas to each of the plurality of nozzles is substantially uniform and/or includes a substantially equal flow conductance.

10 . The assembly of claim 1 , wherein the assembly comprises a separation grid for a plasma processing apparatus.

11 . A plasma processing apparatus for processing a workpiece, the plasma processing apparatus comprising:
a processing chamber; a workpiece support disposed within the processing chamber, the workpiece support configured to support the workpiece during processing; a plasma chamber separated from the processing chamber via a separation grid; and
an inductively coupled plasma source configured to generate a plasma in the plasma chamber;
wherein the separation grid comprises a grid assembly including:
a gas inlet for delivering a first process gas to the grid assembly;
a plurality of nozzles extending vertically through at least a portion of the grid assembly;
a plurality of layers in a vertical stacked arrangement, including:
a top layer comprising one or more first internal gas injection channels configured to receive the first process gas from the gas inlet, the one or more first internal gas injection channels are separate from the plurality of nozzles;
a bottom layer comprising a plurality of second internal gas injection channels separate from the plurality of nozzles having one or more injection apertures configured to deliver the first process gas about a horizontal plane to one or more of the plurality of nozzles; and
a plurality of sublayers disposed between the top layer and the bottom layer, each one of the plurality of sublayers comprising an increasing number of internal gas injection channels as the plurality of sublayers advance from the top layer to the bottom layer.

12 . The plasma processing apparatus of claim 11 , wherein the one or more nozzles of the grid assembly are configured to allow for one or more species generated in the plasma to move from the plasma chamber to the processing chamber.

13 . The plasma processing apparatus of claim 11 , comprising a gas delivery system configured to delivery one or more second process gases to the plasma chamber.

14 . The plasma processing apparatus of claim 11 , wherein the top layer, bottom layer, and the plurality of sublayers are integrally formed.

15 . The plasma processing apparatus of claim 11 , wherein the plurality of sublayers comprises at least five sublayers.

16 . The plasma processing apparatus of claim 11 , wherein the bottom layer comprises more internal gas injections channels as compared to the top layer and/or the plurality of sublayers.

17 . The plasma processing apparatus of claim 11 , wherein each of the one or more internal gas injection channels in the bottom layer are configured to provide the first process gas to at least four nozzles.

Assignees

• Mattson Tech Inc
• Beijing E Town Semiconductor Tech Co Ltd

Inventors

• Long Maolin

Classifications

• H10P34/40

  with high-energy radiation · CPC title

• H01J37/321

  the radio frequency energy being inductively coupled to the plasma · CPC title

• H01J2237/334

  Etching · CPC title

• H01J37/32357

  Generation remote from the workpiece, e.g. down-stream · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title