Ordered alloy magnetic tunnel junction with simplified seed structure
US-12575330-B2 · Mar 10, 2026 · US
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Bruley John patents
Bruley John is listed as an inventor on 36 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Bruley John |
| Total patents | 36 |
| First publication | Mar 10, 2016 |
| Latest publication | Mar 10, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Method for Stripping Organic Material and Residue from Semiconductor Integrated Circuit
US-2026060021-A1 · Feb 26, 2026 · US
Free layer in magnetoresistive random-access memory
US-2025040444-A1 · Jan 30, 2025 · US
Magnetic tunnel junction free layer of multiple materials
US-2024334837-A1 · Oct 3, 2024 · US
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
US-12062614-B2 · Aug 13, 2024 · US
Sacrificial material facilitating protection of a substrate in a qubit device
US-12048254-B2 · Jul 23, 2024 · US
Ordered alloy magnetic tunnel junction with simplified seed structure
US-2024244982-A1 · Jul 18, 2024 · US
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
US-11862567-B2 · Jan 2, 2024 · US
Spurious junction prevention via in-situ ion milling
US-2023397506-A1 · Dec 7, 2023 · US
Spurious junction prevention via in-situ ion milling
US-11765985-B2 · Sep 19, 2023 · US
Recent patents
Latest publications not already listed above.
Grain size control of superconducting materials in thin films for Josephson junctions
US-11552237-B2 · Jan 10, 2023 · US
Sacrificial material facilitating protection of a substrate in a qubit device
US-2022123195-A1 · Apr 21, 2022 · US
Grain size control of superconducting materials in thin films for josephson junctions
US-2022059748-A1 · Feb 24, 2022 · US
Spurious junction prevention via in-situ ion milling
US-2021399199-A1 · Dec 23, 2021 · US
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type iv semiconductor elements
US-2021343647-A1 · Nov 4, 2021 · US
Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device
US-11152214-B2 · Oct 19, 2021 · US
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
US-11101219-B2 · Aug 24, 2021 · US
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type iv semiconductor elements
US-2021193576-A1 · Jun 24, 2021 · US
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
US-10985105-B2 · Apr 20, 2021 · US
Shallow, abrupt and highly activated tin extension implant junction
US-10529832-B2 · Jan 7, 2020 · US
CMOS Compatible Non-Filamentary Resistive Memory Stack
US-2019393413-A1 · Dec 26, 2019 · US
CMOS compatible non-filamentary resistive memory stack
US-10505112-B1 · Dec 10, 2019 · US
ReRAM DEVICE RESISTIVITY CONTROL BY OXIDIZED ELECTRODE
US-2019273205-A1 · Sep 5, 2019 · US
Ferroelectric devices free of extended grain boundaries
US-2019245056-A1 · Aug 8, 2019 · US
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type iv semiconductor elements
US-2019157203-A1 · May 23, 2019 · US
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
US-10269714-B2 · Apr 23, 2019 · US
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type iv semiconductor elements
US-2019067198-A1 · Feb 28, 2019 · US
Shallow, abrupt and highly activated tin extension implant junction
US-2018175174-A1 · Jun 21, 2018 · US
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type iv semiconductor elements
US-2018068950-A1 · Mar 8, 2018 · US
High germanium content silicon germanium fins
US-9812530-B2 · Nov 7, 2017 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| IBM | 35 |
| Globalfoundries Inc | 2 |
| Centre Nat Rech Scient | 1 |
| Lyon Ecole Centrale | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10P14/44 | 10 |
| H10D64/0112 | 10 |
| H10W20/4403 | 10 |
| H10W20/0698 | 10 |
| H10W20/0526 | 10 |