Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same
US-2022139435-A1 · May 5, 2022 · US
Iron-cobalt based target
US12557559B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12557559-B2 |
| Application number | US-202217874593-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 27, 2022 |
| Priority date | Jun 7, 2022 |
| Publication date | Feb 17, 2026 |
| Grant date | Feb 17, 2026 |
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- Title
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Abstract
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Provided is a ferromagnetic free layer, comprising Fe, Co, B and an additive metal, and based on a total atomic number of the ferromagnetic free layer, a content of Co is more than 0 at % and less than 30 at %, a content of B is more than 10 at % and less than or equal to 35 at %, and a content of the additive metal is more than or equal to 2 at % and less than 10 at %; the additive metal comprises Mo, Re or a combination thereof, and a thickness of the ferromagnetic free layer is more than or equal to 1.5 nm and less than 2.5 nm. The ferromagnetic free layer can be applied to a MTJ structure as a single layer, and has sufficient thermal stability for maintaining good magnetic properties after thermal treatment, which makes sure that the MTJ structure can exert normal recording function.
First claim
Opening claim text (preview).
What is claimed is: 1 . A FeCo based target, comprising Fe, Co, B and an additive metal, and based on a total atomic number of the FeCo based target, a content of Co is more than 0 at % and less than 30 at %, a content of B is more than 10 at % and less than or equal to 35 at %, and a content of the additive metal is more than or equal to 2 at % and less than 10 at %; wherein, the additive metal comprises Mo, Re or a combination thereof; the FeCo based target has an α-type FeCo phase, and a ratio of an intensity of ( 200 ) crystal plane of the α-type FeCo phase to an intensity of ( 110 ) crystal plane of the α-type FeCo phase is more than 0.9. 2 . The FeCo based target as claimed in claim 1 , wherein based on the total atomic number of the FeCo based target, the content of B is more than 10 at % and less than 27 at %.
Assignees
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Classifications
Constructional details · CPC title
Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title
the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn · CPC title
Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title
the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title
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- What does patent US12557559B2 cover?
- Provided is a ferromagnetic free layer, comprising Fe, Co, B and an additive metal, and based on a total atomic number of the ferromagnetic free layer, a content of Co is more than 0 at % and less than 30 at %, a content of B is more than 10 at % and less than or equal to 35 at %, and a content of the additive metal is more than or equal to 2 at % and less than 10 at %; the additive metal compr…
- Who is the assignee on this patent?
- Solar Applied Materials Tech Corp, Univ Nat Tsing Hua
- What technology area does this patent fall under?
- Primary CPC classification H10N50/10. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 17 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).