Substrate processing apparatus and substrate processing method

Patent metadata

Field	Value
Publication number	US-12550659-B2
Application number	US-202117507975-A
Country	US
Kind code	B2
Filing date	Oct 22, 2021
Priority date	Oct 23, 2020
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

A substrate processing apparatus configured to dry a substrate with a processing fluid in a supercritical state includes: a processing vessel; a substrate holder configured to hold the substrate horizontally within the processing vessel; a first supply line connected to a first fluid supply provided at the processing vessel and configured to supply the processing fluid into the processing vessel; a drain line connected to a drain unit provided at the processing vessel and configured to drain the processing fluid from the processing vessel; a bypass line branched off from the first supply line and connected to the drain line, the bypass line being configured to allow at least a part of the processing fluid flowing in the first supply line to be drained into the drain line without passing through the processing vessel; and a bypass opening/closing valve configured to open or close the bypass line.

First claim

We claim:

1 . A substrate processing apparatus configured to dry a substrate, which has a liquid on a surface thereof, with a processing fluid in a supercritical state, the substrate processing apparatus comprising:
a processing vessel configured to accommodate the substrate therein; a substrate holder configured to hold the substrate horizontally within the processing vessel such that the surface of the substrate faces upwards; a first supply line connected to a first fluid supply provided at the processing vessel and configured to supply the processing fluid into the processing vessel; a drain line connected to a drain unit provided at the processing vessel and configured to drain the processing fluid from the processing vessel; a bypass line branched off from the first supply line at a first branch point set on the first supply line and connected to the drain line at a connection point set on the drain line, the bypass line being configured to allow at least a part of the processing fluid flowing in the first supply line to be drained into the drain line without passing through the processing vessel; a bypass opening/closing valve configured to open or close the bypass line; a pressure control valve provided in the drain line and configured to adjust an internal pressure of the processing vessel; and a controller configured to control an operation of the substrate processing apparatus, wherein the connection point at which the bypass line is connected to the drain line is set between the processing vessel and the pressure control valve, and when increasing the internal pressure of the processing vessel by the processing fluid supplied into the processing vessel from the first supply line, the controller opens the bypass opening/closing valve to drain a part of the processing fluid flowing in the first supply line into the drain line through the bypass line, and the first fluid supply provided at the processing vessel is configured to supply the processing fluid into the processing vessel toward a bottom surface of the substrate holder configured to hold the substrate, the processing vessel is further provided with a second fluid supply configured to supply the processing fluid in a direction approximately along the surface of the substrate toward a space above the substrate held by the substrate holder, and wherein the substrate processing apparatus further comprises: a main supply line connected to a processing fluid source configured to supply the processing fluid in the supercritical state, the main supply line being branched off into the first supply line and a second supply line at a second branch point set on the main supply line, and the second supply line being connected to the second fluid supply; a first opening/closing valve provided between the second branch point and the first branch point; a second opening/closing valve provided between the second branch point and the second fluid supply; and a third opening/closing valve provided between the drain unit and the connection point.

2 . The substrate processing apparatus of claim 1 , further comprising:
a controller configured to control an operation of the substrate processing apparatus, wherein the controller increases, in a first period, the internal pressure of the processing vessel up to a pressure equal to or higher than a threshold pressure of the processing fluid by the processing fluid supplied into the processing vessel from the first supply line, in a first state in which the first opening/closing valve and the bypass opening/closing valve are opened, whereas the second opening/closing valve and the third opening/closing valve are closed, and the controller allows, in a second period following the first period, the processing fluid to be supplied into the processing vessel from the second supply line and the processing fluid to be drained from the drain unit while maintaining the internal pressure of the processing vessel at the pressure equal to or higher than the threshold pressure of the processing fluid, in a second state in which the second opening/closing valve and the third opening/closing valve are opened, whereas the first opening/closing valve and the bypass opening/closing valve are closed.

3 . The substrate processing apparatus of claim 2 , further comprising:
one or more fourth opening/closing valves provided in the drain line downstream of the pressure control valve, wherein the controller closes the one or more fourth opening/closing valves at least at an end time point of the first period and the controller fills at least a portion of the drain line ranging from the third opening/closing valve to the one or more fourth opening/closing valves with the processing fluid introduced into the portion from the bypass line to thereby increase an internal pressure of the portion.

4 . The substrate processing apparatus of claim 3 ,
wherein the controller opens the one or more fourth opening/closing valves at least in an initial stage of the first period to allow the processing fluid introduced into the drain line from the bypass line to flow downstream of the one or more fourth opening/closing valves in the drain line.

5 . The substrate processing apparatus of claim 2 , further comprising:
a pressure sensor configured to directly or indirectly detect the internal pressure of the processing vessel, wherein the controller is configured to perform, in the second period, a feedback control over an opening degree of the pressure control valve such that the internal pressure of the processing vessel is a set value based on a deviation between the set value of the internal pressure of the processing vessel and a pressure measurement value by the pressure sensor.

6 . The substrate processing apparatus of claim 5 ,
wherein the feedback control over the opening degree of the pressure control valve is performed based on the deviation by adjusting a position of a valve body of the pressure control valve with an actuator such that the internal pressure of the processing vessel is the set value, and the controller sets an initial position of the valve body of the pressure control valve at a start of the feedback control to a position of the valve body of the pressure control valve at a time when the opening degree of the pressure control valve is stable in the second period in a substrate processing performed previously.

7 . The substrate processing apparatus of claim 6 ,
wherein the substrate processing performed previously is a substrate processing performed immediately before a substrate processing currently being performed.

8 . The substrate processing apparatus of claim 1 , further comprising:
a draw-out line branched off from the first supply line at a branch point set on the first supply line upstream of the first branch point; and an opening/closing valve provided in the draw-out line, wherein when increasing the internal pressure of the processing vessel by the processing fluid supplied into the processing vessel from the first supply line, the controller opens the opening/closing valve of the draw-out line to drain a part of the processing fluid flowing in the first supply line.

9 . The substrate processing apparatus of claim 1 , further comprising:
a draw-out line branched off from the first supply line at a branch point set on the first supply line; and an opening/closing valve provided in the draw-out line; wherein when increasing the internal pressure of the processing vessel by the processing fluid supplied into the processing vessel from the first supply line, the controller opens the opening/closing valve of the draw-out line to drain a part of the processing fluid flowing in the first supply lin

Assignees

• Tokyo Electron Ltd

Inventors

• Ihara Toru
• Tanaka Satoru
• Goshi Gentaro
• Yamashita Masami
• Yamanaka Reijiro
• Kumashiro Hideaki

Classifications

• H10P70/80

  Cleaning only by supercritical fluids · CPC title

• H10P72/0408 Primary

  for drying · CPC title

• F26B5/005

  by dipping them into or mixing them with a chemical liquid, e.g. organic; chemical, e.g. organic, dewatering aids (F26B3/005 takes precedence; using chemical vapours or gases F26B21/40) · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H01L21/67034 Primary

  Electricity · mapped topic