Ferroelectric device and semiconductor device

Patent metadata

Field	Value
Publication number	US-12550332-B2
Application number	US-202118245757-A
Country	US
Kind code	B2
Filing date	Sep 9, 2021
Priority date	Sep 22, 2020
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

A ferroelectric device including a metal oxide film having favorable ferroelectricity is provided. The ferroelectric device includes a first conductor, a metal oxide film over the first conductor, and a second conductor over the metal oxide film. The metal oxide film has ferroelectricity. The metal oxide film has a crystal structure. The crystal structure includes a first layer and a second layer. The first layer contains first oxygen and hafnium. The second layer contains second oxygen and zirconium. The hafnium and the zirconium are bonded to each other through the first oxygen. The second oxygen is bonded to the zirconium.

First claim

The invention claimed is:

1 . A semiconductor device comprising a transistor and a capacitor electrically connected to the transistor,
wherein the capacitor comprises:
a first conductor;
an insulator over the first conductor; and
a second conductor over the insulator,
wherein the insulator comprises ferroelectricity, wherein the insulator comprises a crystal structure, wherein the crystal structure comprises a first layer and a second layer, wherein the first layer comprises first oxygen and hafnium, wherein the second layer comprises second oxygen and zirconium, wherein the hafnium and the zirconium are bonded to each other through the first oxygen, and wherein the second oxygen is bonded to the zirconium.

2 . The semiconductor device according to claim 1 ,
wherein the transistor comprises:
an oxide semiconductor in a channel formation region; and
a source electrode and a drain electrode each of which is electrically connected to the oxide semiconductor, and
wherein the first conductor is configured to be one of the source electrode and the drain electrode.

3 . The semiconductor device according to claim 1 , wherein a concentration of at least one of hydrogen and carbon contained in the insulator obtained by SIMS analysis is lower than or equal to 5×10 20 atoms/cm 3 .

4 . The semiconductor device according to claim 1 , wherein a concentration of at least one of hydrogen and carbon contained in the insulator obtained by SIMS analysis is lower than or equal to 1×10 20 atoms/cm 3 .

5 . The semiconductor device according to claim 1 , wherein a concentration of chlorine contained in the insulator obtained by SIMS analysis is lower than or equal to 5×10 21 atoms/cm 3 .

6 . The semiconductor device according to claim 1 , wherein a concentration of chlorine contained in the insulator obtained by SIMS analysis is lower than or equal to 1×10 21 atoms/cm 3 .

7 . A semiconductor device comprising:
a semiconductor film; an insulator over the semiconductor film; and a first conductor over the insulator, wherein the insulator comprises ferroelectricity, wherein the insulator comprises a crystal structure, wherein the crystal structure comprises a first layer and a second layer, wherein the first layer comprises first oxygen and hafnium, wherein the second layer comprises second oxygen and zirconium, wherein the hafnium and the zirconium are bonded to each other through the first oxygen, and wherein the second oxygen is bonded to the zirconium.

8 . The semiconductor device according to claim 7 ,
wherein the semiconductor film comprises an oxide semiconductor, and wherein the semiconductor device comprises a source electrode and a drain electrode each of which is electrically connected to the semiconductor film.

9 . The semiconductor device according to claim 7 , wherein a concentration of at least one of hydrogen and carbon contained in the insulator obtained by SIMS analysis is lower than or equal to 5×10 20 atoms/cm 3 .

10 . The semiconductor device according to claim 7 , wherein a concentration of at least one of hydrogen and carbon contained in the insulator obtained by SIMS analysis is lower than or equal to 1×10 20 atoms/cm 3 .

11 . The semiconductor device according to claim 7 , wherein a concentration of chlorine contained in the insulator obtained by SIMS analysis is lower than or equal to 5×10 21 atoms/cm 3 .

12 . The semiconductor device according to claim 7 , wherein a concentration of chlorine contained in the insulator obtained by SIMS analysis is lower than or equal to 1×10 21 atoms/cm 3 .

13 . A semiconductor device comprising:
a first conductor; a first insulator over the first conductor; a second conductor over the first insulator; and a second insulator positioned at one or both of a top surface of the first conductor and a bottom surface of the second conductor, wherein the first insulator comprises ferroelectricity, wherein the first insulator comprises a crystal structure, wherein the crystal structure comprises a first layer and a second layer, wherein the first layer comprises first oxygen and hafnium, wherein the second layer comprises second oxygen and zirconium, wherein the hafnium and the zirconium are bonded to each other through the first oxygen, and wherein the second oxygen is bonded to the zirconium.

14 . The semiconductor device according to claim 13 , wherein the second insulator comprises nitrogen and silicon.

15 . The semiconductor device according to claim 13 , wherein a concentration of at least one of hydrogen and carbon contained in the first insulator obtained by SIMS analysis is lower than or equal to 5×10 20 atoms/cm 3 .

16 . The semiconductor device according to claim 13 , wherein a concentration of at least one of hydrogen and carbon contained in the first insulator obtained by SIMS analysis is lower than or equal to 1×10 20 atoms/cm 3 .

17 . The semiconductor device according to claim 13 , wherein a concentration of chlorine contained in the first insulator obtained by SIMS analysis is lower than or equal to 5×10 21 atoms/cm 3 .

18 . The semiconductor device according to claim 13 , wherein a concentration of chlorine contained in the first insulator obtained by SIMS analysis is lower than or equal to 1×10 21 atoms/cm 3 .

19 . The semiconductor device according to claim 13 , wherein the second insulator comprises indium, an element M, zinc, and oxygen.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Jinbo Yasuhiro
• Kunitake Hitoshi
• Ohshima Kazuaki
• Oota Masashi
• Furutani Kazuma
• Aoki Takeshi

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/6729

  characterised by the electrodes · CPC title

• H10D30/701

  IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs · CPC title

• H10B53/30 Primary

  characterised by the memory core region · CPC title