Semiconductor device and electronic device

Patent metadata

Field	Value
Publication number	US-12550325-B2
Application number	US-202017776696-A
Country	US
Kind code	B2
Filing date	Nov 10, 2020
Priority date	Nov 21, 2019
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

A novel semiconductor device is provided. A memory string extends in a Z direction. The memory string achieves high-speed operation by using an oxide semiconductor for a semiconductor layer. The memory string includes a MONOS memory cell. A tunnel layer is provided on a control gate side, and a block layer is provided on a semiconductor side. During erase operation, a hole is injected into a charge accumulation layer from the control gate side.

First claim

The invention claimed is:

1 . A semiconductor device comprising a structure body extending in a first direction and a conductor extending in a second direction,
wherein the structure body includes an oxide semiconductor, a first insulator, a second insulator, and a third insulator, wherein the oxide semiconductor extends in the first direction, wherein the first insulator is adjacent to the oxide semiconductor, wherein the second insulator is adjacent to the first insulator, wherein the third insulator is adjacent to the second insulator, wherein, in an intersection portion where the structure body intersects with the conductor, the oxide semiconductor, the first insulator, the second insulator, and the third insulator are concentrically provided, wherein, in the intersection portion, the conductor is adjacent to the third insulator and the first insulator is thicker than the third insulator, and wherein the oxide semiconductor has a thickness of larger than or equal to 30 nm and smaller than or equal to 50 nm.

2 . A semiconductor device comprising a structure body extending in a first direction and n layers of conductors extending in a second direction, where nis an integer greater than or equal to 2,
wherein the structure body includes an oxide semiconductor, a first insulator, a second insulator, and a third insulator, wherein the oxide semiconductor extends in the first direction, wherein the first insulator is adjacent to the oxide semiconductor, wherein the second insulator is adjacent to the first insulator, wherein the third insulator is adjacent to the second insulator, wherein, in each of n intersection portions where the structure body intersects with the n layers of the conductors, the oxide semiconductor, the first insulator, the second insulator, and the third insulator are concentrically provided, wherein, in each of the n intersection portions, the n layers of conductors are adjacent to the third insulator and the first insulator is thicker than the third insulator, and wherein the oxide semiconductor has a thickness of larger than or equal to 30 nm and smaller than or equal to 50 nm.

3 . The semiconductor device according to claim 2 functions as a NAND memory device.

4 . The semiconductor device according to claim 2 functions as a RAM.

5 . The semiconductor device according to claim 1 , wherein the first direction is orthogonal to the second direction.

6 . The semiconductor device according to claim 1 ,
wherein the first insulator functions as a block layer, wherein the second insulator functions as a charge accumulation layer, and wherein the third insulator functions as a tunnel layer.

7 . The semiconductor device according to claim 1 , wherein the intersection portion functions as a memory cell.

8 . The semiconductor device according to claim 1 , wherein the oxide semiconductor contains at least one of indium and zinc.

9 . An electronic device comprising:
the semiconductor device according to claim 1 ; and at least one of an operation switch, a battery, and a display portion.

10 . A semiconductor device comprising a structure body, a first conductor, and a second conductor,
wherein the structure body includes a first portion extending in a first direction, a second portion extending in the first direction, and a third portion extending in a second direction, wherein the first conductor and the second conductor extend in a third direction, wherein the structure body includes an oxide semiconductor, a first insulator, a second insulator, and a third insulator, wherein, in a first intersection portion where the first portion intersects with the first conductor, the oxide semiconductor, the first insulator, the second insulator, and the third insulator are provided concentrically and the first conductor is adjacent to the third insulator, wherein, in a second intersection portion where the second portion intersects with the second conductor, the oxide semiconductor, the first insulator, the second insulator, and the third insulator are provided concentrically and the second conductor is adjacent to the third insulator, wherein, in each of the first intersection portion and the second intersection portion, the first insulator is thicker than the third insulator, and wherein the oxide semiconductor has a thickness of larger than or equal to 30 nm and smaller than or equal to 50 nm.

11 . The semiconductor device according to claim 10 , wherein the first direction, the second direction, and the third direction are orthogonal to each other.

12 . The semiconductor device according to claim 10 ,
wherein the first insulator functions as a block layer, wherein the second insulator functions as a charge accumulation layer, and wherein the third insulator functions as a tunnel layer.

13 . The semiconductor device according to claim 10 , wherein each of the first intersection portion and the second intersection portion functions as a memory cell.

14 . The semiconductor device according to claim 10 , wherein the oxide semiconductor contains at least one of indium and zinc.

15 . An electronic device comprising:
the semiconductor device according to according to claim 10 ; and at least one of an operation switch, a battery, and a display portion.

Assignees

• Semiconductor Energy Lab

Inventors

• Godo Hiromichi
• Kunitake Hitoshi
• Tsuda Kazuki

Classifications

• H10D30/021

  of FETs having insulated gates [IGFET] · CPC title

• H10B10/12

  comprising a MOSFET load element · CPC title

• H10B12/00

  Dynamic random access memory [DRAM] devices · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/675

  Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium · CPC title